Sharp GP1S33 Subminiature, reflow soldering type photointerrupter Datasheet

GP1S33
GP1S33
Subminiature, Reflow Soldering
Type Photointerrupter
■ Features
■ Outline Dimensions
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy ( Slit width : 0.3mm )
4. Applying to reflow soldering
Preheat : 160˚C within 120 seconds
Reflow : 200˚C within 60 seconds
( Peak : 240˚C )
( Unit : mm )
Internal connection diagram
4
3
1
2
1 Anode
2 Collector
5.0
1.5 2.0
4.2
(0.3)
Slit width
Center of
light path
(C0.8)
(C0.3)
+
4 - 0.15 - 0.2
0.1
1. Floppy disk drives
2. Cameras
5.2
3.5
(1.0)
■ Applications
3 Emitter
4 Cathode
1.0± 0.5 4 - 0.5
3.8
1
Rest of gate
❈2.5
2
* Tolerance :± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
4
■ Absolute Maximum Ratings
Output
( Ta = 25˚C )
Symbol
IF
VR
P
VCEO
VECO
IC
PC
P tot
T opr
T stg
T sol
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
0.5mm or more
Input
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
3
Soldering area
*1 For 3 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S33
■ Electro-optical Chara
( Ta = 25˚C )
Parameter
Forward voltage
Reverse current
Collector dark current
Collector current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Input
Output
Transfer
characteristics
Symbol
VF
IR
I CEO
IC
V CE(sat)
tr
tf
60
120
50
100
40
30
20
10
TYP.
1.2
50
50
MAX.
1.4
10
100
600
0.4
150
150
Unit
V
µA
nA
µA
V
µs
µs
P tot
P, P
80
c
60
40
20
0
- 25
0
25
50
75 85
0
- 25
100
0
Ambient temperature T a ( ˚C )
25
50
75 85
100
Ambient temperature T a ( ˚C )
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs. Forward Current
1.0
500
50˚C
100
VCE = 5V
T a = 25˚C
25˚C
0˚C
- 25˚C
0.8
Collector current I C ( mA )
T a = 75˚C
200
Forward current I F ( mA )
MIN.
100
-
Fig. 2 Power Dissipation vs.
Ambient Temperature
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs. Ambient
Temperature
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, I F = 5mA
I F = 10mA, I C = 40 µ A
V CE = 5V, I C = 100 µ A
R L = 1 000 Ω
50
20
10
5
0.6
0.4
0.2
2
1
0
0.5
1
1.5
2
2.5
Forward voltage V F ( V )
3
0
0
4
8
12
16
Forward current I F ( mA )
20
GP1S33
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Fig. 6 Collector Current vs.
Ambient Temperature
0.25
T a = 25˚C
I F = 5mA
3.0
VCE = 5V
Collector current I
Collector current I C ( mA )
I F = 50mA
2.4
C
( mA )
0.20
40mA
1.8
30mA
1.2
20mA
0.6
0.15
0.10
0.05
10mA
5mA
0
0
5
Collector-emitter voltage VCE ( V)
0
- 25
10
Fig. 7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
25
50
75
Ambient temperature T a ( ˚C )
100
Fig. 8 Collector Dark Current vs.
Ambient Temperature
10 - 6
0.14
I F = 10mA
V CE = 20V
5
I C = 40 µ A
Collector dark current I CEO ( A)
Collector-emitter saturation voltage VCE ( sat ) ( V)
0
0.12
0.10
0.08
0.06
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
2
0.04
- 25
10 - 10
0
25
50
75
Ambient temperature T a ( ˚C )
100
0
Fig. 9 Response Time vs. Load Resistance
25
50
75
Ambient temperature T a ( ˚C )
100
Test Circuit for Response Time
500
VCE = 5V
I C = 100 µ A
T a = 25˚C
200
Response time ( µ s )
100
50
20
2
1
RD
RL
Output
tf
Output
10%
90%
tr
td
10
5
Input
VCC
Input
td
ts
0.5
0.3
0.05 0.1 0.2
ts
tr
0.5
1
2
5
10 20
Load resistance R L ( k Ω )
50 100
tf
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
I F = 5mA
VCE = 5V
T a = 25˚C
I F = 5mA
VCE = 5V
T a = 25˚C
Shield
60
-
+
0
40
( Detector center )
20
60
0
+
Detector
40
20
0
0
- 2
- 1
0
1
2
Shield distance L ( mm )
●
Shield
80
L
80
Relative collector current ( % )
100
L
Detector
Relative collector current ( % )
100
Please refer to the chapter “ Precautions for Use ” .
- 2
- 1
0
1
Shield distance L ( mm )
2
( Detector center )
GP1S33
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