Order this document by MCR106/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors *Motorola preferred devices except MCR106–3 PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. • • • • SCRs 4 AMPERES RMS 60 thru 600 VOLTS Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability G K A A G A K CASE 77-08 (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 110°C, RGK = 1 kΩ) MCR106-2 MCR106-3 MCR106-4 MCR106-6 MCR106-8 Symbol VDRM and VRRM Value Unit Volts 60 100 200 400 600 RMS Forward Current (All Conduction Angles) IT(RMS) 4 Amps Average Forward Current TC = 93°C TA = 30°C or IT(AV) 2.55 Amps Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to +110°C) ITSM 25 Amps I2t 2.6 A2s PGM 0.5 Watt Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power Average Gate Power PG(AV) 0.1 Watt Peak Forward Gate Current IGM 0.2 Amp Peak Reverse Gate Voltage VRGM 6 Volts TJ –40 to +110 °C Operating Junction Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (cont.) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1995 1 MAXIMUM RATINGS — continued Rating Symbol Value Unit Tstg –40 to +150 °C — 6 in. lb. Symbol Max Unit Thermal Resistance, Junction to Case RθJC 3 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W Storage Temperature Range Mounting Torque(1) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TC = 25°C and RGK = 1000 Ohms unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM) TJ = 25°C TJ = 110°C Symbol Min Typ Max Unit — — — — 10 200 µA µA — — 2 Volts — — — — 200 500 IDRM, IRRM Forward “On” Voltage (ITM = 4 A Peak) VTM Gate Trigger Current (Continuous dc)(2) (VAK = 7 Vdc, RL = 100 Ohms) (VAK = 7 Vdc, RL = 100 Ohms, TC = –40°C) IGT Gate Trigger Voltage (Continuous dc) (VAK = 7 Vdc, RL = 100 Ohms, TC = 25°C) VGT — — 1 Volts Gate Non-Trigger Voltage (VAK = Rated VDRM, RL = 100 Ohms, TJ = 110°C) VGD 0.2 — — Volts IH — — 5 mA dv/dt — 10 — V/µs Holding Current (VAK = 7 Vdc, TC = 25°C) Forward Voltage Application Rate (TJ = 110°C) µA 1. Torque rating applies with use of compression washer (B52200-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. 2. RGK current is not included in measurement. 2 Motorola Thyristor Device Data FIGURE 1 – MAXIMUM CASE TEMPERATURE FIGURE 2 – MAXIMUM AMBIENT TEMPERATURE 110 110 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) CURRENT DERATING 106 102 0 98 π α f = 60 Hz 94 90 α = 30° 60° 90° 120° 180° dc 86 82 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) Motorola Thyristor Device Data 3.6 4.0 90 0 70 α π f = 60 Hz 50 30 α = 30° 0 0.1 60° 90° 180° 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) dc 0.8 3 PACKAGE DIMENSIONS –B– U F Q –A– C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 2 3 H STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– CASE 77–08 (TO–225AA) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR106/D* MCR106/D