UTC HE8551 Low voltage high current small signal pnp transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
HE8551
PNP SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
PNP TRANSISTOR
1
„
TO-92
DESCRIPTION
The UTC HE8551 is a low voltage high current small signal
PNP transistor, designed for Class B push-pull 2W audio
amplifier for portable radio and general purpose applications.
„
1
TO-92NL
FEATURES
* Collector current up to 1.5A
* Collector-emitter voltage up to 25 V
* Complimentary to UTC HE8051
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
HE8551L-x-T92-B
HE8551G-x-T92-B
HE8551L-x-T92-K
HE8551G-x-T92-K
HE8551L-x-T92-R
HE8551G-x-T92-R
HE8551L-x-T9N-B
HE8551G-x-T9N-B
HE8551L-x-T9N-K
HE8551G-x-T9N-K
HE8551L-x-T9N-R
HE8551G-x-T9N-R
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
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HE8551
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-6
V
Collector Dissipation (TA=25℃)
PC
1
W
Collector Current
IC
-1.5
A
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
„
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(SAT)
VBE(SAT)
VBE
fT
COB
TEST CONDITIONS
IC=-100μA, IE=0
IC=-2mA, IB=0
IE=-100μA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN
-40
-25
-6
TYP
MAX
-100
-100
45
85
40
100
170
160
80
-0.28
-0.98
-0.66
190
9.0
UNIT
V
V
V
nA
nA
500
-0.5
-1.2
-1.0
V
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
RANGE
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D
160-300
E
250-500
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HE8551
TYPICAL CHARACTERISTICS
Fig. 2 DC Current Gain
Fig. 1 Static Characteristics
103
-0.5
-0.4
-0.3
-0.2
IB=-3.0mA
102
VCE=-1V
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
101
IB=-1.0mA
-0.1
IB=-0.5mA
100 -1
-10
-100
-101
-102
Collector Current, IC (mA)
-103
Saturation Voltage, VBE & VCE (mV)
-0
-0.4
-0.8
-1.2 -1.6 -2.0
Collector-Emitter Voltage, VCE ( V)
Collector Current, IC (mA)
0
Capacitance, Cob (pF)
Current Gain-Bandwidth Product,
fT (MHz)
„
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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HE8551
TYPICAL CHARACTERISTICS(Cont.)
PD-TA
1.2
PD(W), Power Dissipation
„
PNP SILICON TRANSISTOR
1
0.8
0.6
0.4
0.2
0
0
50
100
200
150
Ambient Temperature-TA(
)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-047.D
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