Order this document by MGSF1N02LT1/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device $ ! " # !""# !" Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 3 3 DRAIN 1 2 CASE 318–08, Style 21 SOT–23 (TO–236AB) 1 GATE • Low rDS(on) Provides Higher Efficiency and Extends Battery Life 2 SOURCE • Miniature SOT–23 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) ID IDM 750 2000 mA Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient RθJA 625 °C/W TL 260 °C Drain–to–Source Voltage Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds ORDERING INFORMATION Device Reel Size Tape Width Quantity MGSF1N02LT1 7″ 8mm embossed tape 3000 MGSF1N02LT3 13″ 8mm embossed tape 10,000 GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1996 1 MGSF1N02LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 — — Vdc — — — — 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µAdc) µAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) — — 0.075 0.115 0.085 0.125 ON CHARACTERISTICS(1) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss — 100 — Output Capacitance (VDS = 5.0 Vdc) Coss — 90 — pF Transfer Capacitance (VDG = 5.0 Vdc) Crss — 40 — td(on) — 2.5 — tr — 1.0 — td(off) — 16 — tf — 8.0 — QT — 6000 — pC IS — — 0.6 A Pulsed Current ISM — — 0.75 Forward Voltage(2) VSD — 0.8 — SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 Ω) Fall Time Gate Charge (See Figure 6) ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 3 4V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 2 – 55°C 1.5 TJ = 150°C 1 0.5 1 1.5 2 2.5 3 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics 2 3.25 V 3.5 V 2 VGS = 3.0 V 1.5 2.75 V 1 2.5 V 0.5 25°C 0 2.5 2.25 V 3.5 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 2. On–Region Characteristics Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.2 150°C 0.18 0.16 VGS = 4.5 V 0.14 25°C 0.12 –55°C 0.1 0.08 0.06 0.04 0 0.1 0.3 0.2 0.4 0.5 0.6 0.7 0.8 0.9 1 RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) MGSF1N02LT1 0.14 0.13 150°C 0.12 VGS = 10 V 0.11 0.1 0.09 25°C 0.08 0.07 –55°C 0.06 0.05 0.04 0 0.2 0.4 0.6 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 1.6 VGS = 10 V ID = 2 A 1.4 1.3 VGS = 4.5 V ID = 1 A 1.2 1.1 1 0.9 0.8 0.7 1.2 1.6 1.4 1.8 2 10 VDS = 16 V TJ = 25°C 8 6 4 ID = 2.0 A 2 0 0.6 – 55 –5 45 95 145 0 1000 2000 TJ, JUNCTION TEMPERATURE (°C) 3000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On–Resistance Variation with Temperature 1000 1 TJ = 150°C 0.1 25°C –55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 1 Figure 4. On–Resistance versus Drain Current Figure 3. On–Resistance versus Drain Current 1.5 0.8 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.01 VGS = 0 V f = 1 MHz TJ = 25°C Ciss 100 Coss Crss 0.001 0 0.2 0.4 0.6 0.8 1 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 0 5 10 15 20 VDS, DRAIN–TO–SOURCE VOLTAGE (Volts) Figure 8. Capacitance 3 MGSF1N02LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 4 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MGSF1N02LT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J CASE 318–08 ISSUE AE SOT–23 (TO–236AB) Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 5 MGSF1N02LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. This device has a class 1 ESD rating. 6 How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 ◊ *MGSF1N02LT1/D* Motorola Small–Signal Transistors, FETs and DiodesMGSF1N02LT1/D Device Data