MOTOROLA MGSF3454XT1

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by MGSF3454XT1/D
SEMICONDUCTOR TECHNICAL DATA
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Part of the GreenLine Portfolio of devices with energy–
conserving traits.
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 50 mΩ (TYP)

D
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
1 2 5 6
D
DRAIN
D
D
S
G
CASE 318G–02, Style 1
TSOP 6 PLASTIC
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP 6 Surface Mount Package Saves Board Space
3
GATE
• Visit our Web Site at http://www.mot–sps.com/ospd
SOURCE
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VDSS
30
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
ID
IDM
1.75
20
A
Total Power Dissipation @ TA = 25°C
PD
950
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
RθJA
250
°C/W
TL
260
°C
Drain–to–Source Voltage
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
Device Marking = 3G
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3454XT1
7″
8 mm embossed tape
3000
MGSF3454XT3
13″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola
Transistors, FETs and Diodes Device Data

Motorola, Small–Signal
Inc. 1997
1
MGSF3454XT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
—
—
—
—
—
—
1.0
25
—
—
±100
1.0
—
—
—
—
0.05
0.07
0.065
0.095
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
Vdc
µAdc
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)
rDS(on)
Vdc
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
345
—
Output Capacitance
(VDS = 5.0 V)
Coss
—
215
—
pF
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
140
—
td(on)
—
10
—
tr
—
15
—
td(off)
—
20
—
tf
—
10
—
QT
—
—
15
nC
IS
—
—
1.0
A
Pulsed Current
ISM
—
—
5.0
A
Forward Voltage(2)
VSD
—
—
1.2
V
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
( DD = 10 Vdc,
(V
Vd , ID = 1.0
1 0 A,
A,
VGEN = 10 V, RL = 10 Ω)
Turn–Off Delay Time
Fall Time
Gate Charge
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
7.0
0.12
R DS(on) , ON–RESISTANCE (W)
VGS = 4.5 V
ID , DRAIN CURRENT (AMPS)
6.0
4.0 V
5.0
4.0
3.5 V
3.0
2.0
3.0 V
1.0
2.5 V
2.25 V
VGS = 10 V
0.08
25°C
0.06
–55°C
0.04
0
0
2
TJ = 150°C
0.10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.02
9.0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 1. Output Characteristics
Figure 2. On–Resistance versus Drain Current
7.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
1000
0.14
TJ = 150°C
C, CAPACITANCE (pF)
R DS(on) , ON–RESISTANCE (W)
0.16
0.12
VGS = 4.5 V
0.10
25°C
0.08
–55°C
Ciss
Coss
Crss
100
VGS = 0 V
f = 1.0 MHz
TJ = 25°C
0.06
0.04
10
0.5
1.0
1.5
2.5
2.0
3.0
0
8.0
12
16
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus Drain Current
Figure 4. Capacitance
24
1.4
10
VDS = 24 V
TJ = 25°C
ID = 10 A
8.0
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
1.3
ID = 1.5 A
VGS = 4.5 V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
–55
10
45
–5.0
95
145
QG, TOTAL GATE CHARGE (nC)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Gate Charge
Figure 6. On–Resistance versus Junction
Temperature
1.6
10
ID = 6.4 A
VGS = 10 V
1.5
1.4
IS, SOURCE CURRENT (AMPS)
R DS(on) , ON–RESISTANCE (NORMALIZED)
4.0
ID, DRAIN CURRENT (AMPS)
R DS(on) , ON–RESISTANCE (NORMALIZED)
VGS , GATE–TO–SOURCE VOLTAGE (VOLTS)
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.0
TJ = 150°C
25°C –55°C
0.1
0.01
0.001
–55
–5.0
45
95
145
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ, JUNCTION TEMPERATURE (°C)
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 7. On–Resistance versus Junction
Temperature
Figure 8. Source–Drain Diode Forward Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
0.4
1.6
V GS(th) (VOLTS)
R DS(on) , ON–RESISTANCE (W)
0.5
0.3
0.2
ID = 1.75 A
ID = 250 mA
1.4
1.2
1.0
0.1
0.8
0
0.6
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
–50
–25
0
25
50
75
100
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. On–Resistance versus
Gate–to–Source Voltage
Figure 10. Threshold Voltage
125
150
20
POWER (WATTS)
16
12
8.0
4.0
0
0.01
0.1
1.0
10
100
TIME (sec)
Figure 11. Single Pulse Power
NORMALIZED EFFECTIVE
TRANSIENT THERMAL IMPEDANCE
1.0
DUTY CYCLE = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
0.01
SINGLE PULSE
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TA = P(pk) RθJA(t)
0.01
0.0001
0.001
0.01
0.1
1.0
10
100
1.0 k
SQUARE WAVE PULSE DURATION (sec)
Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MGSF3454XT1
INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP–6
TSOP–6 POWER DISSIPATION
The power dissipation of the TSOP–6 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the TSOP–6 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 500 milliwatts.
PD =
150°C – 25°C
250°C/W
= 500 milliwatts
The 250°C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 500 milliwatts. There
are other alternatives to achieving higher power dissipation
from the TSOP–6 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
MGSF3454XT1
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
5
4
2
3
B
S
1
D
G
M
J
C
0.05 (0.002)
K
H
CASE 318G–02
ISSUE A
TSOP 6 PLASTIC
DIM
A
B
C
D
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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This device has a class 1 ESD rating.
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6
◊
Motorola Small–Signal Transistors, FETs and DiodesMGSF3454XT1/D
Device Data