Order this document by MHPM6B5A120D/D SEMICONDUCTOR TECHNICAL DATA Integrated Power Stage for 460 VAC Motor Drives Motorola Preferred Devices These modules integrate a 3–phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free–wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user’s control board. 5.0, 10, 15 AMP, 1200 V HYBRID POWER MODULES • Short Circuit Rated 10 µs @ 125°C • Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) • Compact Package Outline • Access to Positive and Negative DC Bus • UL Recognized PRELIMINARY MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit IGBT Reverse Voltage VCES 1200 V Gate-Emitter Voltage VGES ± 20 V Rating Continuous IGBT Collector Current 5A120 10A120 15A120 ICmax 5.0 10 15 A Peak Repetitive IGBT Collector Current (1) 5A120 10A120 15A120 IC(pk) 10 20 30 A Continuous Diode Current 5A120 10A120 15A120 IFmax 5.0 10 15 A Peak Repetitive Diode Current (1) 5A120 10A120 15A120 IF(pk) 10 20 30 A IGBT Power Dissipation per die (TC = 25°C) 5A120 10A120 15A120 PD 43 65 82 W Diode Power Dissipation per die (TC = 25°C) 5A120 10A120 15A120 PD 19 38 38 W IGBT Power Dissipation per die (TC = 95°C) 5A120 10A120 15A120 PD 19 29 36 W Diode Power Dissipation per die (TC = 95°C) 5A120 10A120 15A120 PD 8.3 17 17 W Junction Temperature Range TJ – 40 to +150 °C Short Circuit Duration (VCC = 600 V, TJ = 125°C) tsc 10 msec (1) 1.0 ms = 1.0% duty cycle This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 MOTOROLA Motorola, Inc. 1997 MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 1 MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) — continued Rating Symbol Value Unit VISO 2500 V Operating Case Temperature Range TC – 40 to +95 °C Storage Temperature Range Tstg – 40 to +125 °C — 12 lb–in Isolation Voltage Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) IGES Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 125°C ICES — — ± 20 µA — 6.0 2000 100 µA VGE(th) 4.0 6.0 8.0 V Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V(BR)CES 1200 — — V Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125°C VCE(SAT) — — 2.54 2.33 3.5 — V VF — — 1.67 1.31 2.0 — V Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125°C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz) 5A120 10A120 15A120 Cies — — — 930 1200 2800 — — — pF Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V) 5A120 10A120 15A120 QT — — — 31 65 100 — — — nC RG(on) — — — — 270 220 220 20 — — — — INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) Recommended Gate Resistor Turn–On 5A120 10A120 15A120 Turn–Off RG(off) Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) td(on) 5A120 10A120 15A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 255 350 425 — — — tr Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) ns — — — 140 250 225 — — — — 170 — — 290 500 td(off) Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) tf ns E(on) 5A120 10A120 15A120 Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 0.96 2.8 4.0 — — — E(off) mJ — — — 0.15 0.39 0.52 1.0 2.0 2.5 — — — 130 170 165 — — — trr 5A120 10A120 15A120 MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 2 ns mJ — — — 5A120 10A120 15A120 Diode Reverse Recovery Time (IF = IFmax, V = 600 V, RG as specified) ns — — — 5A120 10A120 15A120 W ns MOTOROLA Characteristic Symbol Min Typ Max — — — 5.0 6.0 9.6 — — — — — — 335 575 860 — — — Unit INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) – continued Peak Reverse Recovery Current (IF = IFmax, V = 600 V, RG as specified) Irrm A 5A120 10A120 15A120 Diode Stored Charge (IF = IFmax, V = 600 V, RG as specified) Qrr nC 5A120 10A120 15A120 INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) Characteristic Symbol Turn–On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 td(on) Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 tr Turn–Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) td(off) Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) tf Turn–On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 E(on) Turn–Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 E(off) Diode Reverse Recovery Time (IF = IFmax, V = 600 V, RG as specified) Peak Reverse Recovery Current (IF = IFmax, V = 600 V, RG as specified) Diode Stored Charge (IF = IFmax, V = 600 V, RG as specified) Min Typ Max ns — — — 230 315 375 — — — ns — — — 130 220 235 — — — — 176 — — 676 — ns ns mJ — — — 1.3 3.9 5.5 — — — mJ — — — 0.711 1.290 1.939 — — — — — — 190 375 310 — — — — — — 8.4 10 15 — — — — — — 825 2100 2500 — — — trr 5A120 10A120 15A120 ns Irrm 5A120 10A120 15A120 A Qrr 5A120 10A120 15A120 Unit nC THERMAL CHARACTERISTICS (Each Die) Thermal Resistance — IGBT 5A120 10A120 15A120 RqJC — — — 2.30 1.54 1.21 2.88 1.92 1.52 °C/W Thermal Resistance — Free–Wheeling Diode 5A120 10A120 15A120 RqJC — — — 5.28 2.61 2.61 6.60 3.26 3.26 °C/W MOTOROLA MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 3 TYPICAL CHARACTERISTICS 2.0 2.0 VGE = 18 V VGE = 18 V 12 V 1.5 12 V 1.5 15 V IC /I Cmax IC /I Cmax 15 V 1.0 0.5 1.0 9.0 V 0.5 9.0 V 0 0 1.0 0 2.0 3.0 4.0 5.0 6.0 1.0 0 2.0 3.0 4.0 5.0 6.0 VCE (V) VCE (V) Figure 1. Normalized IC versus VCE, TJ = 25°C Figure 2. Normalized IC versus VCE, TJ = 125°C 2.5 1000 2.0 800 toff @ 125°C t d(off) , t f , t off (ns) IF/I Fmax IF (NORMALIZED), 125°C 1.5 1.0 0.5 tf @ 125°C 600 toff 400 tf 200 IF (NORMALIZED) td @ 125°C td 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.4 0.6 0.8 1.0 IC/ICmax Figure 3. IF versus VF Figure 4. td(off), tf, toff versus Normalized IC 1.2 10 t d(on), t r , t on (ALL NORMALIZED ON t r ) 1400 1200 1000 t d(off) , t f , t off (ns) 0.2 VF (V) toff @ 125°C 800 tf @ 125°C 600 toff 400 td @ 125°C tf 200 td 0 0 ton td(on) 1.0 tr @ 125°C 0.1 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1.0 RG (W) IC/ICmax Figure 5. td(off), tf, toff, versus RG Figure 6. td(on), tr, ton versus IC MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 4 MOTOROLA 1.2 TYPICAL CHARACTERISTICS 6.0 ton td(on) 5.0 tr 4.0 E on , E off (mJ) t d(on), t r , t on (ALL NORMALIZED ON t r ) 10 1.0 Eon 3.0 Eoff @ 125°C 2.0 1.0 @ 125°C 0.1 Eoff 0 0.5 0 1.0 1.5 2.0 2.5 3.0 0 2.0 4.0 8.0 10 12 14 IC, (A) Figure 7. td(on), tr, ton versus Normalized RG Figure 8. Eon, Eoff versus IC 16 2.0 E on (NORMALIZED FOR E on WITH RECOMMENDED R G(on)) Eoff, 125°C 1.4 1.2 1.0 0.8 0.6 Eoff 0.4 0.2 Eon, 125°C 1.5 Eon 1.0 0.5 0 0 20 0 40 60 80 100 0 120 0.5 RG (W) trr 1.0 @ 125°C 0.1 0.4 0.6 0.8 1.0 1.2 Cies 100 Coes 10 Cres 1.0 0.1 0 20 40 60 80 IF/IFmax VCE (V) Figure 11. trr, Irr versus Normalized IF Figure 12. Capacitance Variation MOTOROLA 2.5 1000 Irr 0.2 2.0 Figure 10. Normalized Eon versus Normalized RG(on) CAPACITANCE, NORMALIZED TO ICmax (pF/A) 10 0 1.5 1.0 RG/RG (RECOMMENDED) Figure 9. Eoff versus RG(off) at Rated IC t rr , (NORMALIZED TO 1), I rr , (NORMALIZED TO 10) 6.0 RG/RG (RECOMMENDED) 1.6 Eoff (mJ) Eon @ 125°C MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 5 100 TYPICAL CHARACTERISTICS 15 5A120 100 10A120 15A120 15A120 10A120 10 5A120 IC (A) VGE (V) 10 +VGE = 15 V –VGE = 0 V RG = 220 W TJ = 25°C 1.0 5.0 VCC = 500 0.1 0 0 20 40 60 80 100 120 0 140 200 400 600 800 1000 1200 QG (nC) VCE (V) Figure 13. VGE versus QG Figure 14. Reverse Biased Safe Operating Area 1400 1.0 10A120 DIODE NORMALIZED r(t) 0.8 0.6 15A120 DIODE 15A120 IGBT 10A120 IGBT 5A120 DIODE 15A120 IGBT 0.4 0.2 10A120 IGBT 5A120 IGBT 0 0.01 0.1 1.0 10 100 1,000 10,000 TIME (ms) Figure 15. Normalized r(t) +15 V ton RG(on) toff td(on) tr td(off) tf 90% 90% OUTPUT, Vout INVERTED MC33153 RG(off) 10% 90% INPUT, Vin 50% 50% 10% PULSE WIDTH Figure 16. Switching Waveforms MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 6 Figure 17. Typical Gate Drive Circuit MOTOROLA APPLICATION INFORMATION These modules are designed to be used as the power stage of a three–phase AC induction motor drive. They may be used for up to 230 VAC applications. Switching frequencies up to 10 kHz have been considered in the design. Gate resistance recommendations have been listed. Separate turn–on and turn–off resistors are listed, to be used in a circuit resembling Figure 17. All switching characteristics are given based on following these recommendations, but appropriate graphs are shown for operation with different gate resistance. In order to equalize across the three different module ratings, a normalization process was used. Actual typical values are listed in the second section of this specification sheet, “Electrical Specifications,” but many of the graphs are given in normalized units. The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the same at rated maximum current (10 and 20 A). The curves extend to I Cpk , the maximum allowable instantaneous current. The next graph, turn–off times versus current, is again normalized to the rated maximum current. The following graph, turn–off times versus RG(off), is intentionally not normalized, as all three modules behave similarly during turn–off. Turn–on times have been normalized. Again, the graph showing variation due to current has been normalized for rated maximum current. The graph showing variation due to gate resistance normalizes against the recommended RG(on) for each module. In addition, the times are normalized to tr at the appropriate temperature. For example, td(on) for a 10 A module operating at 125°C at 4.0 A can be found by multiplying the typical tr for a 10 A module at 125°C (220 ns) by the value shown on the graph at a normalized current of 0.4 (1.4) to get 308 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a 1 2 3 Q1 Q2 16 15 4 larger fraction of total turn–on time at 125°C, and in general, larger gate resistance results in slower switching. Graphs of switching energies follow a similar structure. The first of these graphs, showing variation due to current, is not normalized, as any of these devices operating within its limits follows the same trend. Eoff does not need to be normalized to show variation with RG(off), as all three are specified with the same nominal resistance. Eon, however, has been appropriately normalized. Gate resistance has been normalized to the specified RG(on). In order to show the effect of elevated temperature, all energies were normalized to Eon at 25°C using the recommended RG(on). Reverse recovery characteristics are also normalized. IF is normalized to rated maximum current. Irrm is normalized so that at maximum current at either 25°C or 125°C, the graph indicates “10”, while trr is normalized to be “1” at maximum current at either temperature. Capacitance values are normalized for ICmax. Due to poor scaling, gate charge and thermal characteristics are shown separately for each module. Many issues must be considered when doing PCB layout. Figure 19 shows the footprint of a module, allowing for reasonable tolerances. A polarizing post is provided near pin 1 to ensure that the module is properly inserted during final assembly. When laying out traces, two issues are of primary importance: current carrying capacity and voltage clearance. Many techniques may be used to maximize both, including using traces on both sides of the PCB to double total copper thickness, providing cut–outs in high–current traces near high–voltage pins, and even removing portions of the board to increase “over–the–surface” creapage distance. Some additional advantage may be gained by potting the entire board assembly in a good dielectric. Consult appropriate regulatory standards, such as UL 840, for more details on high–voltage creapage and clearance. 5 Q3 D1 Q4 D2 14 6 13 12 7 Q5 D3 D5 Q6 D4 11 8 10 D6 9 Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out MOTOROLA MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 7 RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical) NON–PLATED THRU–HOLE 0.140 0.265 0.175 KEEP–OUT ZONES (x4) 0.270 0.250 0.625 0.270 PIN 1 PLATED THRU–HOLES (x16) 0.065 0.250 3.500 PACKAGE “SHADOW” 0.450 0.625 0.175 0.175 1.350 1.530 OPTIONAL NON–PLATED THRU–HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2) Figure 19. Package Footprint NOTES: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint. 2. Dimension of plated thru–holes indicates net size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product. MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 8 MOTOROLA PACKAGE DIMENSIONS 3.500 3.000 1 0.154 2 3 4 5 6 7 8 1.000 0.115 1.530 1.350 16 15 14 13 12 11 10 9 0.250 0.050 0.475 0.150 0.650 0.350 PRELIMINARY MOTOROLA MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps ◊ MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D 10 MHPM6B5A120D/D MOTOROLA