KEC E50A21VBR Stack silicon diffused diode (alternator diode for automotive) Datasheet

SEMICONDUCTOR
E50A21VBS, E50A21VBR
TECHNICAL DATA
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
A
·Average Forward Current : IO=50A.
·Zener Voltage : 21V(Typ.)
POLARITY
E50A21VBS (+ Type)
E50A21VBR (- Type)
K
H
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
E I
SYMBOL
RATING
UNIT
Average Forward Current
IF(AV)
50
A
Peak 1 Cycle Surge Current
IFSM
380 (60Hz)
A
Non-Repetitive Peak
Reverse Surge Current (10mS)
IRSM
55
A
Transient Peak Reverse Voltage
VRSM
19
V
Peak Reverse Voltage
VRM
16
V
Junction Temperature
Tj
-40~215
℃
Tstg
-40~215
℃
Storage Temperature Range
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
_ 0.04
Φ1.3 +
_ 0.2
4.2+
_ 0.2
8.0 +
TYP 0.5
_ 0.2
Φ10.0 +
_ 0.1x45
0.4+
8.5 MAX
0.2+0.1
_ 0.5
28.35+
J D
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IFM=100A
-
-
1.05
V
Zener Voltage
VZ
IZ=10mA
19
21
23
V
Reverse Current
IR
VR=18V
-
-
0.3
μA
IFM=100A, IM=100mA, Pw=100mS
-
-
60
mV
Transient Thermal Resistance
ΔVF
Breakdown Voltage
Vbr
Irsm=55A, Pw=10mS
-
-
32
V
Temperature Coefficient
α
T
IZ=10mA
-
15.7
-
mV/℃
HIR
Ta=150℃, VR=18V
-
-
100
μA
Rth
DC total junction to case
-
-
0.6
℃/W
Reverse Leakage Current Under
High Temperature
Temperature Resistance
2002. 4. 16
Revision No : 5
1/1
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