Fairchild EGF1A Fast rectifiers (glass passivated) Datasheet

EGF1A - EGF1D
EGF1A - EGF1D
Features
•
•
•
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current, @ TL = 100°C
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
Tstg
TJ
Value
1A
50
1B
100
1C
150
1D
200
Units
V
1.0
A
30
A
-65 to +175
°C
-65 to +175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
2.0
W
RθJA
Thermal Resistance, Junction to Ambient*
85
°C/W
RθJL
Thermal Resistance, Junction to Lead*
30
°C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Device
Parameter
1A
VF
Forward Voltage @ 1.0 A
trr
Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
IR
CT
2001 Fairchild Semiconductor Corporation
1B
1C
Units
1D
1.0
V
50
ns
10
100
µA
µA
15
pF
EGF1A-EGF1D, Rev. D
EGF1A - EGF1D
100
1.6
TA
J = 25º C
Pulse Width = 300µ
µS
2% Duty Cycle
1.4
Forward Current, IF [A]
Average Rectified Forward Current, IF [A]
Typical Characteristics
1.2
1
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
0.8
0.6
0.4
10
1
0.1
0.2
0
0
25
50
75
100
125
Lead Temperature [ºC]
150
Figure 1. Forward Current Derating Curve
40
1000
30
100
20
10
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 3. Non-Repetitive Surge Current
0.4
0.6
0.8
1
1.2
Forward Voltage, VF [V]
1.4
1.6
Figure 2. Forward Voltage Characteristics
Reverse Current, IR [mA]
Peak Forward Surge Current, IFSM [A]
0.01
0.2
175
T A = 100º C
10
TA
J = 25º C
1
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
Total Capacitance, CT [pF]
60
50
40
30
20
10
0
0.1
0.5 1 2
5 10 20 50 100
Reverse Voltage, V R [V]
500
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
No Identification Needed
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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