MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state−of−the−art die designed for use in 220 V line−operated switch−mode Power supplies and electronic light ballasts. www.onsemi.com POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS Features • Improved Efficiency Due to Low Base Drive Requirements: ♦ High and Flat DC Current Gain hFE Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail) Tight Parametric Distributions are Consistent Lot−to−Lot Two Package Choices: Standard TO−220 or Isolated TO−220 MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 These Devices are Pb−Free and are RoHS Compliant* ♦ • • • • COLLECTOR 2,4 1 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 450 Vdc Collector−Base Breakdown Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) IC 8.0 Adc ICM 16 Adc Base Current − Continuous IB 4.0 Adc Base Current − Peak (Note 1) IBM 8.0 Adc RMS Isolation Voltage (Note 2) Test No. 1 Per Figure 22a Test No. 1 Per Figure 22b Test No. 1 Per Figure 22c (for 1 sec, R.H. < 30%, TA = 25_C) VISOL MJF18008 4500 3500 1500 V Total Device Dissipation @ TC = 25_C MJE18008 MJF18008 Derate above 25°C MJE18008 MJF18008 PD Operating and Storage Temperature −65 to 150 Max 4 MJE18008G AYWW 1 2 3 W W/_C 125 45 1.0 0.36 TJ, Tstg MARKING DIAGRAMS _C 1 2 TO−220AB CASE 221A−09 STYLE 1 TO−220 FULLPACK CASE 221D STYLE 2 UL RECOGNIZED MJF18008G AYWW 3 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction−to−Case MJE18008 MJF18008 RqJC Unit Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C _C/W 1.0 2.78 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2. Proper strike and creepage distance must be provided. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 10 1 G A Y WW = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJE18008/D MJE18008, MJF18008 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified) Symbol Min Typ Max Unit VCEO(sus) 450 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) ICES − − − − − − 100 500 100 mAdc IEBO − − 100 mAdc Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base−Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) VBE(sat) − − 0.82 0.92 1.1 1.25 Vdc Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) VCE(sat) − − − − 0.3 0.3 0.35 0.4 0.6 0.65 0.7 0.8 hFE 14 − 6.0 5.0 11 11 10 − 28 9.0 8.0 15 16 20 34 − − − − − − − Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (TC = 125_C) (TC = 125_C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 800 V, VEB = 0) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS (TC = 125_C) (IC = 4.5 Adc, IB = 0.9 Adc) (TC = 125_C) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) (TC = 125_C) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) (TC = 125_C) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) (TC = 125_C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT − 13 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 100 150 pF Input Capacitance (VEB = 8.0 V) Cib − 1750 2500 pF VCE(dsat) − − 5.5 11.5 − − Vdc (TC = 125°C) − − 3.5 6.5 − − (TC = 125°C) − − 11.5 14.5 − − (TC = 125°C) − − 2.4 9.0 − − ton − − 200 190 300 − ns toff − − 1.2 1.5 2.5 − ms ton − − 100 250 180 − ns toff − − 1.6 2.0 2.5 − ms tfi − − 100 120 180 − ns tsi − − 1.5 1.9 2.75 − ms tc − − 250 230 350 − ns tfi − − 85 135 150 − ns tsi − − 2.0 2.6 3.2 − ms tc − − 210 250 300 − ns Dynamic Saturation Voltage: Determined 1.0 ms and 3.0 ms respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 1.0 Adc VCC = 300 V) 1.0 ms 3.0 ms 1.0 ms 3.0 ms (TC = 125°C) SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms) Turn−On Time (IC = 2.0 Adc, IB1 = 0.2 Adc, IB2 = 1.0 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (TC = 125°C) Turn−On Time (IC = 4.5 Adc, IB1 = 0.9 Adc, IB2 = 2.25 Adc, VCC = 300 V) (TC = 125°C) Turn−Off Time (TC = 125°C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time (IC = 2.0 Adc, IB1 = 0.2 Adc, IB2 = 1.0 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) Fall Time (IC = 4.5 Adc, IB1 = 0.9 Adc, IB2 = 2.25 Adc) (TC = 125°C) Storage Time (TC = 125°C) Crossover Time (TC = 125°C) 3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. 4. Proper strike and creepage distance must be provided. www.onsemi.com 2 MJE18008, MJF18008 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V TJ = 125°C h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 100 TJ = 25°C 10 TJ = -20°C 1 0.01 1 0.1 TJ = 25°C 10 TJ = -20°C 1 0.01 10 VCE = 5 V TJ = 125°C 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 10 1.5 IC = 1 A 1 3A 5A V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 8 A 10 A 0.5 1 IC/IB = 10 0.1 IC/IB = 5 0 0.01 0.1 1 0.01 0.01 10 1 10 IC COLLECTOR CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage 10000 1.2 TJ = 25°C f = 1 MHz Cib 1.1 1000 1 C, CAPACITANCE (pF) V BE , VOLTAGE (VOLTS) 0.1 IB, BASE CURRENT (AMPS) 1.3 0.9 0.8 0.7 TJ = 25°C 0.6 100 Cob 10 IC/IB = 5 IC/IB = 10 0.5 TJ = 125°C 0.4 0.01 TJ = 25°C TJ = 125°C 0.1 1 1 10 1 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance www.onsemi.com 3 1000 MJE18008, MJF18008 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1500 4500 IB(off) = IC/2 VCC = 300 V PW = 20 ms IB(off) = IC/2 VCC = 300 V PW = 20 ms 3500 1000 3000 IC/IB = 5 IC/IB = 10 t, TIME (ns) TJ = 125°C t, TIME (ns) TJ = 25°C TJ = 125°C IC/IB = 5 4000 TJ = 25°C 500 2500 2000 IC/IB = 10 1500 1000 500 0 0 0 1 3 2 6 5 4 7 1 8 Figure 8. Resistive Switching, toff 8 5000 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 1500 1000 2 3 3500 IC = 2 A 3000 2500 2000 1500 1000 TJ = 25°C TJ = 125°C 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 4000 2000 500 TJ = 25°C TJ = 125°C 4500 t si , STORAGE TIME (ns) IC/IB = 5 2500 t, TIME (ns) 7 6 Figure 7. Resistive Switching, ton 3000 500 IC/IB = 10 4 5 6 7 0 8 IC = 4.5 A 3 4 6 5 7 8 9 10 12 11 13 14 IC COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 15 300 400 TJ = 25°C TJ = 125°C 350 t, TIME (ns) 250 tfi 200 150 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 100 50 0 1 2 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 250 tc 300 t, TIME (ns) 5 4 IC, COLLECTOR CURRENT (AMPS) 3500 0 3 2 IC, COLLECTOR CURRENT (AMPS) tfi 200 tc 150 100 TJ = 25°C TJ = 125°C 3 4 5 6 7 50 8 1 2 3 4 5 6 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 www.onsemi.com 4 8 MJE18008, MJF18008 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 160 400 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH t fi , FALL TIME (ns) 140 IC = 2 A 130 120 110 100 IC = 4.5 A 90 80 60 3 4 6 5 300 250 200 150 IC = 4.5 A 100 TJ = 25°C TJ = 125°C 70 TJ = 25°C TJ = 125°C 50 7 8 9 10 11 12 13 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 2 A 350 TC , CROSSOVER TIME (ns) 150 15 3 4 5 6 7 8 9 10 11 12 13 14 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time 15 GUARANTEED SAFE OPERATING AREA INFORMATION 100 9 5 ms 10 ms 1 ms 1 ms I C , COLLECTOR CURRENT (AMPS) I C , COLLECTOR CURRENT (AMPS) DC (MJE18008) 10 EXTENDED SOA 1 DC (MJF18008) 0.1 0.01 10 100 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 8 7 6 5 4 3 2 -5 V 1 VBE(off) = 0 V 0 1000 0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0,6 0,4 THERMAL DERATING 0,2 0,0 20 40 60 80 100 120 140 600 1000 800 200 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 16. Reverse Bias Switching Safe Operating Area 1,0 0,8 -1, 5 V 160 TC, CASE TEMPERATURE (°C) Figure 17. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. www.onsemi.com 5 MJE18008, MJF18008 5 VCE 4 dyn 1 ms 3 2 dyn 3 ms VOLTS 1 0 -1 90% IB -2 1 ms -3 -4 -5 0 3 ms IB 1 2 3 4 TIME 5 6 7 8 Figure 18. Dynamic Saturation Voltage Measurements 10 9 90% IC tfi IC 8 tsi 7 6 tc 5 VCLAMP 10% IC 10% VCLAMP 4 IB 3 90% IB1 2 1 0 0 1 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 Iout MPF930 +10 V IB A IB2 50 W RB2 MJE210 COMMON 500 mF 150 W 3W MTP12N10 1 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA -Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit www.onsemi.com 6 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 MJE18008, MJF18008 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 10 t, TIME (ms) RqJC(t) = r(t) RqJC RqJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100 1000 Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18008 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 RqJC(t) = r(t) RqJC RqJC = 2.78°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) SINGLE PULSE 0.1 1 10 100 1000 10000 t, TIME (ms) Figure 21. Typical Thermal Response (ZqJC(t)) for MJF18008 ORDERING INFORMATION Device Package Shipping MJE18008G TO−220AB (Pb−Free) 50 Units / Rail MJF18008G TO−220 (Fullpack) (Pb−Free) 50 Units / Rail www.onsemi.com 7 100000 MJE18008, MJF18008 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP LEADS HEATSINK 0.099″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.099″ MIN 0.110″ MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. www.onsemi.com 8 MJE18008, MJF18008 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER Y www.onsemi.com 9 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MJE18008, MJF18008 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE18008/D