IRF IRG4ZH50KD Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

PD - 9.1680
IRG4ZH50KD
Surface Mountable Short
INSULATED GATE BIPOLAR TRANSISTOR WITH
Circuit Rated UltraFast IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
●
High short circuit rating optimized for motor control, tsc = 10µs,
n-channel
C
VCES = 1200V
VCC = 720V, TJ = 125°C, VGE = 15V
●
●
●
●
●
●
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery antiparallel diodes for use in bridge configurations
Combines low conduction losses with high switching speed
Low profile low inductance SMD-10 Package
Separated control & Power-connections for easy paralleling
Good coplanarity
Easy solder inspection and cleaning
VCE(ON)typ = 2.79V
G
@VGE = 15V, IC = 29A
E(k)
E
Benefits
●
●
●
●
Highest power density and efficiency available
HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
High input impedance requires low gate drive power
Less noise and interference
SMD-10
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
1200
54
29
108
108
16
108
10
± 20
210
83
-55 to +150
V
A
µs
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
Typ.
Max.
—
—
—
—
—
—
0.44
6.0(0.21)
0.60
1.20
—
—
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Notes:
➀ Repetitive rating: VGE = 20V; pulse width limited by maximum
junction temperature (figure 20)
➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
➃ Pulse width 5.0µs, single shot.
➁ VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)
1
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IRG4ZH50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage ➂
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
V(BR)CES
VGE(th)
DVGE(th)/DTJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance ➃
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
Min.
1200
—
—
—
—
3.0
—
14
—
—
—
—
—
Typ.
—
0.91
2.79
3.32
2.66
—
-10
21
—
—
2.5
2.1
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1.0mA
3.5
IC = 29A
VGE = 15V
—
V
IC = 54A
see figures 2, 5
—
IC = 29A, TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 29A
250
µA
VGE = 0V, VCE = 1200V
6500
VGE = 0V, VCE = 1200V, TJ = 150°C
3.5
V
IC = 16A
see figure 13
—
IC = 16A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
190
25
70
110
43
150
200
3.20
2.28
5.48
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
73
72
290
390
10.12
2.0
2800
140
53
90
164
5.8
8.3
260
680
120
76
Max. Units
Conditions
280
IC = 29A
38
nC VCC = 400V
see figure 8
110
VGE = 15V
—
—
TJ = 25°C
ns
230
IC = 29A, VCC = 800V
290
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail"
—
mJ and diode reverse recovery
6.5
see figures 9,10,18
—
µs
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
—
TJ = 150°C,
see figures 10,11,18
—
IC = 29A, VCC = 800V
ns
—
VGE = 15V, RG = 5.0Ω,
—
Energy losses include "tail"
—
mJ and diode reverse recovery
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
see figure 7
—
ƒ = 1.0MHz
135
ns
TJ = 25°C see figure
245
TJ = 125°C
14
IF = 16A
10
A
TJ = 25°C see figure
15
TJ = 125°C
15
VR = 200V
675
nC TJ = 25°C see figure
1838
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C see figure
—
TJ = 125°C
17
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IRG4ZH50KD
25
F or b oth:
D uty c y c le : 50 %
T J = 12 5° C
T sink = 90 °C
G a te d riv e a s s pe c ified
LOAD CURRENT (A)
20
P ow er D is s ipation = 34 W
15
S q u a re w a v e :
60% of rated
voltage
10
I
5
Id e a l d io d es
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector Current (A)
100
100
TJ = 150 ° C
10
TJ = 25 ° C
1
1.0
V GE = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
3
I C , Collector-to-Emitter Current (A)
1000
1000
TJ = 150 ° C
10
TJ = 25 ° C
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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IRG4ZH50KD
4.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
60
50
40
30
20
10
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 58 A
3.0
IC = 29 A
IC =14.5 A
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
TC , Case Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.001
0.00001
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4ZH50KD
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
4000
Cies
2000
1000
16
12
8
4
Coes
Cres
0
0
1
10
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
6.6
6.2
5.8
5.4
10
20
30
40
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
5
80
120
160
200
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 800V
V GE = 15V
TJ = 25 ° C
I C = 29A
0
40
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
7.0
VCC = 400V
I C = 29A
50
RG = 5.0Ω
Ohm
VGE = 15V
VCC = 800V
IC = 58 A
IC = 29 A
10
IC =14.5 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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IRG4ZH50KD
1000
5.0Ω
RG == Ohm
T J = 150 ° C
VCC = 800V
20 VGE = 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
25
15
10
VGE = 20V
T J = 125 o C
100
10
5
SAFE OPERATING AREA
1
0
0
10
20
30
40
50
1
60
10
100
1000
10000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
1000
100
TJ = 150°C
TJ = 125°C
10
TJ = 25°C
1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward Voltage Drop - V FM (V)
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4ZH50KD
40
300
VR = 2 00V
T J = 125 °C
T J = 25°C
VR = 20 0V
T J = 12 5°C
T J = 25 °C
30
200
I R R M - (A )
trr - (n s)
I F = 32A
I F = 16A
I F = 8.0 A
I F = 32A
20
I F = 16A
100
I F = 8.0A
10
0
100
di f /dt - (A /µ s)
0
100
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1000
di f /d t - (A /µ s)
Fig. 15 - Typical Recovery Current vs. dif/dt
1200
1000
VR = 200 V
T J = 125°C
T J = 25°C
VR = 20 0V
T J = 125°C
T J = 25°C
900
600
di(rec )M /dt - (A /µ s )
Q R R - (nC )
I F = 32A
I F = 16A
I F = 8.0A
100
I F = 32A
I F =16A
I F = 8.0 A
300
0
100
di f /d t - (A /µ s)
Fig. 16 - Typical Stored Charge vs. dif/dt
7
1000
10
100
1000
di f /d t - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4ZH50KD
90% V ge
Same type
device as
D .U.T.
+V ge
V ce
430µF
80%
of Vce
D .U .T.
Ic
90% Ic
10% V ce
Ic
5% Ic
td (off)
tf
E off =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1+5µ S
V ce icIcdtdt
Vce
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T .
10% + V g
trr
Q rr =
Ic
trr
id
Ic dtdt
tx
∫
+V g
tx
10% V c c
10% Irr
Vcc
D U T V O LT A G E
AND CURRENT
Vce
V pk
Irr
Vcc
10% Ic
Ipk
90% Ic
Ic
D IO D E R E C O V E R Y
W AVEFORMS
tr
td(on)
5% V c e
t1
∫
t2
c e ieIcdtdt
E on = VVce
t1
t2
E rec =
D IO D E R E V E R S E
RECOVERY ENERG Y
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫ Vc Ic dt
t4
V d id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4ZH50KD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
600V
4 X IC @25°C
0 - 600V
50V
600 0µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
9
Figure 20. Pulsed Collector Current
Test Circuit
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IRG4ZH50KD
Case Outline — SMD-10
Dimensions are shown in milimeters
17.30
14.20
E(k) G
4.27
n/c
0.90
5.55
29.00
C
0.90
E
E
Recommended footprint
10
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Data and specifications subject to change without notice.
3/98
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