Order this document by MJD243/D SEMICONDUCTOR TECHNICAL DATA DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc • High Current–Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS MAXIMUM RATINGS Symbol Value Unit VCB VCEO VEB 100 Vdc 100 Vdc 7 Vdc Collector Current — Continuous Peak IC 4 8 Adc Base Current IB PD Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage 1 Adc 12.5 0.1 Watts W/_C PD 1.4 0.011 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC RθJA 10 89.3 _C/W Total Device Dissipation @ TC = 25_C Derate above 25_C Total Device Dissipation @ TA = 25_C* Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Junction to Ambient* CASE 369A–13 CASE 369–07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.190 4.826 Rating 0.165 4.191 * When surface mounted on minimum pad sizes recommended. 0.07 1.8 0.118 3.0 2 20 1.5 15 0.063 1.6 TA (SURFACE MOUNT) 1 10 0.243 6.172 PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 TC 0.5 5 0 0 25 50 75 100 125 inches mm 150 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJD243 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ [ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 — Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0, TJ = 125_C) ICBO — — 100 100 nAdc µAdc Emitter Cutoff Current (VBE = 7 Vdc, IC = 0) IEBO — 100 nAdc DC Current Gain (1) (IC = 200 mAdc, VCE = 1 Vdc) DC Current Gain (1) (IC = 1 Adc, VCE = 1 Vdc) hFE 40 15 180 — — — — 0.3 0.6 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) Collector–Emitter Saturation Voltage (1) (IC = 500 mAdc, IB = 50 mAdc) (IC = 1 Adc, IB = 100 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (1) (IC = 2 Adc, IB = 200 mAdc) VBE(sat) — 1.8 Vdc Base–Emitter On Voltage (1) (IC = 500 mAdc, VCE = 1 Vdc) VBE(on) — 1.5 Vdc fT 40 — MHz Cob — 50 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle (2) fT = hFE• ftest. IC, COLLECTOR CURRENT (AMPS) 10 2%. 500 µs 5 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 µs 2 1 ms 1 5 ms 0.5 0.2 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.02 0.01 dc 1 v 2 5 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Active Region Maximum Safe Operating Area 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.02 RθJC(t) = r(t) θJC RθJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 Figure 3. Thermal Response 2 Motorola Bipolar Power Transistor Device Data 200 MJD243 1.4 300 200 TJ = 150°C TJ = 25°C VCE = 1 V VCE = 2 V 1.2 25°C 100 70 50 – 55°C 30 20 10 7 5 0.04 0.06 1 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 500 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 1 V 0.4 0.2 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 IC/IB = 10 5 VCE(sat) 0 0.04 0.06 4 0.1 θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 4. DC Current Gain 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) VCC + 30 V *APPLIES FOR IC/IB ≤ hFE/3 25 µs + 1.5 0 –9 V – 55°C to 25°C tr, tf ≤ 10 ns DUTY CYCLE = 1% – 0.5 –1 –2 SCOPE RB 25°C to 150°C ∗θVC FOR VCE(sat) 0 – 1.5 RC +11 V +1 + 0.5 4 Figure 5. “On” Voltages + 2.5 +2 2 D1 51 –4 V 25°C to 150°C θVB FOR VBE – 2.5 0.04 0.06 0.1 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB ≈ 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB ≈ 100 mA – 55°C to 25°C 0.2 0.4 0.6 1 2 4 IC, COLLECTOR CURRENT (AMP) Figure 6. Temperature Coefficients Figure 7. Switching Time Test Circuit 500 2000 TJ = 25°C VCC = 30 V IC/IB = 10 100 70 50 700 500 tr 30 20 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) Figure 8. Turn–On Time Motorola Bipolar Power Transistor Device Data 2 ts 300 200 100 70 50 td @ VBE(off) = 5 V 10 7 5 0.04 0.06 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 1000 t, TIME (ns) t, TIME (ns) 300 200 4 30 20 0.04 0.06 tf 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 9. Turn–Off Time 3 MJD243 200 C, CAPACITANCE (pF) TJ = 25°C 100 Cib 70 50 30 20 10 Cob 1 2 5 7 10 20 30 3 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 10. Capacitance 4 Motorola Bipolar Power Transistor Device Data MJD243 PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR CASE 369A–13 ISSUE W C B V E R 4 A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369–07 ISSUE K Motorola Bipolar Power Transistor Device Data 5 MJD243 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Bipolar Power Transistor Device Data *MJD243/D* MJD243/D