Fairchild FDS4410A Single n-channel, logic-level, powertrench mosfet Datasheet

FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
■ 10 A, 30 V.
General Description
RDS(ON) = 13.5 mΩ @ VGS = 10 V
RDS(ON) = 20 mΩ @ VGS = 4.5 V
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely low
RDS(ON)
■ High power and current handling capability
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
S
Pin 1
S
S
G
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain–Source Voltage
VGSS
Gate–Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
– Continuous
Ratings
Units
30
V
±20
V
(Note 1a)
10
A
(Note 1a)
2.5
– Pulsed
50
(Note 1b)
W
1.0
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1b)
125
(Note 1)
25
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4410A
FDS4410A
13"
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com
FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET
May 2005
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆ TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
30
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
V
mV/°C
25
µA
1
VDS = 24 V, VGS = 0 V, TJ = 55°C
10
±100
nA
3
V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.9
∆VGS(th)
∆ TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–5
RDS(on)
Static Drain–Source On–Resistance
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 10 A, TJ = 125°C
9.8
12.0
13.7
ID(on)
On–State Drain Current
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 10 A
mV/°C
13.5
20
23
50
mΩ
A
48
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1205
pF
290
pF
115
pF
2.4
Ω
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
VDS = 15 V, ID = 1 A, VGS = 10 V,
RGEN = 6 Ω
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
3.4
nC
Qgd
Gate–Drain Charge
4.0
nC
VDD = 15 V, ID = 10 A, VGS = 5 V
9
19
ns
5
10
ns
28
44
ns
9
19
ns
12
16
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
trr
Diode Reverse Recovery Time
IF = 10A, diF/dt = 100 A/µs
(Note 2)
Qrr
Diode Reverse Recovery Charge
0.74
1.2
A
V
24
nS
27
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
FDS4410A Rev. B
www.fairchildsemi.com
FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
50
3
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
I D, DRAIN CURRENT (A)
40
6.0V
3.5.V
4.5V
30
20
3.0V
10
VGS = 3.0V
2.5
2
3.5V
1.5
4.0V
4.5V
10V
0.5
0
0
0.5
1
1.5
0
2
10
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.05
ID = 10A
VGS = 10V
1.6
ID = 5 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
-50
0.04
0.03
o
T A = 125 C
0.02
o
TA = 25 C
0.01
0
-25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
175
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VGS = 0V
IS , REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
6.0V
1
30
20
TA = 125oC
25oC
10
-55oC
10
TA = 125oC
1
o
25 C
0.1
0.01
-55oC
0.001
0.0001
0
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
0
4
Figure 5. Transfer Characteristics.
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS4410A Rev. B
0.2
0.4
0.6
0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
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FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET
Typical Characteristics
1600
ID = 10 A
VDS = 10V
f = 1MHz
VGS = 0 V
15V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
4
1200
Ciss
800
Coss
400
2
Crss
0
0
0
5
10
15
Qg, GATE CHARGE (nC)
20
0
25
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
100
1ms
10ms
RDS(ON) LIMIT
10
P(pk), PEAK TRANSIENT POWER (W)
100µs
ID, DRAIN CURRENT (A)
5
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
R θJA = 125 oC/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
Figure 9. Maximum Safe Operating Area.
0.01
0.1
1
t 1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
RθJA (t) = r(t) * Rθ JA
R θJA = 125°C/W
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t 1 /t 2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the cir cuit board design.
4
FDS4410A Rev. B
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FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET
Typical Characteristics
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5
FDS4410A Rev. B
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FDS4410A Single N-Channel, Logic-Level, PowerTrench® MOSFET
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