Order this document by MJE171/D SEMICONDUCTOR TECHNICAL DATA . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 • DC Current Gain — hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc • Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc • Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 VOLTS 12.5 WATTS MAXIMUM RATINGS Rating Symbol Collector–Base Voltage MJE171 MJE181 MJE172 MJE182 Unit 80 100 Vdc 60 80 Vdc VCB VCEO Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Peak Base Current Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range VEB IC 7.0 Vdc 3.0 6.0 Adc IB PD 1.0 Adc 1.5 0.012 Watts W/_C PD 12.5 0.1 Watts W/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit θJC θJA 10 _C/W 83.4 _C/W CASE 77–08 TO–225AA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PD, POWER DISSIPATION (WATTS) TA TC 2.8 14 2.4 12 2.0 10 1.6 8.0 TC 1.2 6.0 0.8 4.0 TA 0.4 2.0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — — — 0.1 0.1 0.1 0.1 — 0.1 50 30 12 250 — — — — — 0.3 0.9 1.7 — — 1.5 2.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) VCEO(sus) MJE171, MJE181 MJE172, MJE182 Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0, TC = 150_C) (VCB = 100 Vdc, IE = 0, TC = 150_C) Vdc µAdc ICBO MJE171, MJE181 MJE172, MJE182 MJE171, MJE181 MJE172, MJE182 Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO mAdc µAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VBE(sat) Base–Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) — 1.2 Vdc fT 50 — MHz — — 60 40 Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob pF MJE171/MJE172 MJE181/MJE182 (1) fT = hfe• ftest. VCC + 30 V 1K RC 25 µs SCOPE RB D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% –4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit 2 tr 100 0 t, TIME (ns) +11 V – 9.0 V 500 300 200 50 30 20 VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25°C td 10 5 3 2 NPN MJE181/182 PNP MJE171/172 1 1 2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 3 5 Figure 3. Turn–On Time Motorola Bipolar Power Transistor Device Data 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 θJC(t) = r(t) θJC θJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) 0.05 0.1 0.07 0.05 0.02 0.01 0.03 0 (SINGLE PULSE) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 50 100 200 Figure 4. Thermal Response ACTIVE–REGION SAFE OPERATING AREA 10 100 µs 500 µs 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 5.0 dc 5.0 ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 5.0 100 µs 2.0 500 µs 1.0 5.0 ms 0.5 0.2 0.1 0.05 0.02 0.01 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182 There are two limitations on the power handling ability of a transistor — average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _ C. T J(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t 10K 100 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) 1K 500 300 200 PNP MJE171/MJE172 NPN MJE181/MJE182 70 C, CAPACITANCE (pF) 5K 3K 2K ts 100 50 30 20 dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 tf 50 Cib 30 20 Cob NPN MJE181/182 PNP MJE171/172 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMPS) Figure 7. Turn–Off Time Motorola Bipolar Power Transistor Device Data TJ = 25°C 5 10 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 8. Capacitance 3 PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–08 TO–225AA ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 4 ◊ Motorola Bipolar Power Transistor Device Data *MJE171/D* MJE171/D