MOTOROLA MJE4342

Order this document
by MJE4342/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector–Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 140 Vdc — MJE4342 MJE4352
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 35 (Typ)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
v
w ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 – 160 VOLTS
MAXIMUM RATINGS
Symbol
MJE4342
MJE4352
MJE4343
MJE4353
Unit
VCEO
140
160
Vdc
Collector–Base Voltage
VCB
140
160
Vdc
Emitter–Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak (1)
IC
16
20
Adc
Base Current — Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
PD
125
Watts
TJ, Tstg
– 65 to + 150
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
_C/W
Rating
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
CASE 340D–01
TO–218 TYPE
THERMAL CHARACTERISTICS
5.0 µs, Duty Cycle
PD, POWER DISSIPATION (WATTS)
(1) Pulse Test: Pulse Width
10%.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
REV 2
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
w
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
140
160
—
—
Vdc
ICEO
—
—
750
750
µAdc
Collector–Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
—
1.0
5.0
mAdc
Collector–Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
750
µAdc
Emitter–Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
15
8.0
35 (Typ)
15 (Typ)
—
—
2.0
3.5
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
MJE4342, MJE4352
MJE4343, MJE4353
Collector–Emitter Cutoff Current
(VCE = 70 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0
MJE4342, MJE4352
MJE4343, MJE4353
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 800 mA)
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 16 Adc, IB = 2.0 Adc)
VBE(sat)
—
3.9
Vdc
Base–Emitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
VBE(on)
—
3.9
Vdc
fT
1.0
—
MHz
Cob
—
800
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width
(2) fT = hfe• ftest.
300 µs, Duty Cycle
2.0%.
VCC
+ 30 V
3.0
2.0
25 µs
SCOPE
RB
0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
D1
51
1.0
0.7
0.5
tr
0.3
0.2
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Note: Reverse polarities to test PNP devices.
Figure 2. Switching Times Test Circuit
2
t, TIME ( µs)
+11 V
– 9.0 V
TJ = 25°C
IC/IB = 10
VCE = 30 V
RC
0.1
td @ VBE(off) = 5.0 V
0.07
0.05
0.03
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Typical Turn–On Time
Motorola Bipolar Power Transistor Device Data
20
TYPICAL CHARACTERISTICS
5.0
2.0
ts
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
t, TIME ( µs)
3.0
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
2.0
1.0
1.2
VBE @ VCE = 2.0 V
tf
0.7
VBE(sat) @ IC/IB = 10
0.8
0.4
VCE(sat) @ IC/IB = 10
0.5
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
10
0
20
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn–Off Time
10
20
10
20
Figure 5. On Voltages
DC CURRENT GAIN
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
100
VCE = 2 V
50
TJ = 150°C
25°C
– 55°C
20
10
100
VVCE
CE==22VV
TTJJ==150°C
150°C
25°C
25°C
––55°C
55°C
10
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
20
0.2
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. MJE4340 Series (NPN)
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. MJE4350 Series (PNP)
2.0
TJ = 25°C
1.6
IC = 4.0 A
8.0 A
16 A
1.2
0.8
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (AMP)
2.0 3.0
5.0
Figure 8. Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
3
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.02
0.05
0.01
0.02
SINGLE PULSE
0.01
0.02
0.05
P(pk)
θJC(t) = r(t) θJC
θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1000
2000
Figure 9. Thermal Response
100
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMITED
IC, COLLECTOR CURRENT (AMP)
50
20
5.0 ms
10
dc
5.0
2.0
1.0
MJE4342
MJE4352
MJE4343
MJE4353
0.5
0.2
0.1
3.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9.
50 70 100 150 200
5.0 7.0
10
20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias Safe
Operating Area
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics.
IC, COLLECTOR CURRENT (AMPS)
REVERSE BIAS
20
16
TJ = 100°C
VBE(off) ≤ 5 V
12
8.0
4.0
MJE4342
MJE4352
MJE4343
MJE4353
20
40
60
80 100 120 140 160 180
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 11. Maximum Reverse Bias Safe
Operating Area
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
2
3
K
D
MILLIMETERS
MIN
MAX
19.00
19.60
14.00
14.50
4.20
4.70
1.00
1.30
1.45
1.65
5.21
5.72
2.60
3.00
0.40
0.60
28.50
32.00
14.70
15.30
4.00
4.25
17.50
18.10
3.40
3.80
1.50
2.00
INCHES
MIN
MAX
0.749
0.771
0.551
0.570
0.165
0.185
0.040
0.051
0.058
0.064
0.206
0.225
0.103
0.118
0.016
0.023
1.123
1.259
0.579
0.602
0.158
0.167
0.689
0.712
0.134
0.149
0.060
0.078
J
H
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
G
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–01
TO–218 TYPE
ISSUE A
Motorola Bipolar Power Transistor Device Data
5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
Motorola Bipolar Power Transistor Device Data
*MJE4342/D*
MJE4342/D