isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE172G DESCRIPTION ·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = -80 V ·DC Current Gain— : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A ·Complement to the NPN MJE182G ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-peak -6 A IB Base Current -1 A Collector Power Dissipation Ta=25℃ 1.5 Collector Power Dissipation TC=25℃ 12.5 Junction Temperature 150 ℃ -65~150 ℃ PC Ti Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.com MAX UNIT 10 ℃/W 83.4 ℃/W 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE172G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-1.5A ;IB= -0.15 A -0.9 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -3A ;IB=-0.6 A -1.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage VCE= -1V; IC= -0.5A -1.2 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 VCB= -100V; IE= 0;TC= 150℃ -0.1 -0.1 μA mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -0.1 μA hFE-1 DC Current Gain IC= -0.1 A ; VCE= -1V 50 hFE-2 DC Current Gain IC= -0.5A ; VCE= -1V 30 hFE-3 DC Current Gain IC= -1.5 A ; VCE= -1V 12 Current-Gain—Bandwidth Product IC= -0.1 A; VCE= -10V; 30 MHz Output Capacitance IE= 0; VCB= -10V;ftest= 0.1MHz 30 pF fT COB CONDITIONS MIN MAX -80 UNIT V 250 G:Pb-Free Package isc Website：www.iscsemi.com 2 isc & iscsemi is registered trademark