Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V Collector–Emitter Breakdown — V(BR)CES — 650 V State–of–Art Bipolar Power Transistor Design Fast Inductive Switching: tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C • Ultrafast FBSOA Specified • 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS MAXIMUM RATINGS Rating Symbol MJ16110 MJW16110 Unit Collector–Emitter Sustaining Voltage VCEO(sus) 400 Vdc Collector–Emitter Breakdown Voltage VCES 650 Vdc Emitter–Base Voltage VEBO 6 Vdc Collector Current — Continuous — Pulsed (1) IC ICM 15 20 Adc Base Current — Continuous — Pulsed (1) IB IBM 10 15 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derated above 25_C PD Operating and Storage Temperature 175 100 1 135 54 1.09 Watts TJ, Tstg – 65 to 200 – 55 to 150 _C RθJC 1 0.92 _C/W CASE 1–07 TO–204AA (FORMERLY TO–3) MJ16110 W/_C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle TL 275 _C CASE 340F–03 TO–247AE MJW16110 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola Inc. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc — — — — 100 1000 OFF CHARACTERISTICS (1) Collector–Emitter Sustaining Voltage (Table 1) (IC = 20 mAdc, IB = 0) µAdc Collector Cutoff Current (VCE = 650 Vdc, VBE(off) = 1.5 V) (VCE = 650 Vdc, VBE(off) = 1.5 V, TC = 100_C) ICEV Collector Cutoff Current (VCE = 650 Vdc, RBE = 50 Ω, TC = 100_C) ICER — — 1000 µAdc Emitter–Base Leakage (VEB = 6 Vdc, IC = 0) IEBO — — 10 µAdc — — — — 0.3 0.7 0.3 0.4 0.9 2.0 1.0 1.5 — — 1.2 1.2 1.5 1.5 6 12 20 — See Figures 11, 12, and 13 V Cob — — 400 pF tsv — 700 1500 ns tc — 45 150 tfi — 20 75 tsv — 1000 2000 tc — 50 200 tfi — 25 125 td — 15 — tr — 330 — ts — 800 — tf — 110 — ts — 500 — tf — 250 — ON CHARACTERISTICS (1) Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) (IC = 10 Adc, IB = 1.2 Adc) (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 10 Adc, IB = 2 Adc, TC = 100_C) VBE(sat) DC Current Gain (IC = 15 Adc, VCE = 5 Vdc) hFE Vdc Vdc DYNAMIC CHARACTERISTICS Dynamic Saturation VCE(dsat) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS Inductive Load (Table 1) Storage TJ = 25_C Crossover Fall Time Storage IC = 10 A, IB1= 1 A, VBE(off) = 5 V, VCE(pk) = 250 V TJ = 100_C Crossover Fall Time Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time IB2 = 2 A, RB2 = 4 Ω IC = 10 A, IB1 = 1 A, VCC = 250 V, PW = 30 µs, Duty Cycle = 2% ns ā Storage Time VBE(off) = 5 V Fall Time (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2 2%. Motorola Bipolar Power Transistor Device Data 30 TJ = 100°C 20 TJ = 25°C 10 VCE , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) hFE, DC CURRENT GAIN TYPICAL STATIC CHARACTERISTICS TJ = – 55°C 5 3 VCE = 5 V 2 0.2 0.3 0.5 3 1 2 5 IC, COLLECTOR CURRENT (AMPS) 10 3 2 1 0.7 0.5 0.3 0.2 TJ = 100°C TJ = 25°C 0.07 0.05 IC/IB = 5 0.03 0.15 0.2 0.3 20 0.5 0.7 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10 15 Figure 2. Collector–Emitter Saturation Voltage 3 VBE, BASE–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) IC/IB = 10 0.1 Figure 1. DC Current Gain 10 7 5 TJ = 100°C TJ = 25°C TJ = 25°C 2 10 A 15 A 1 0.7 0.5 5A 0.2 7A IC = 3 A 0.1 0.1 0.2 0.5 0.7 1 2 5 7 IC/IB = 5 & 10 2 1.5 1 TJ = 25°C 0.7 0.5 TJ = 100°C 0.3 0.15 0.2 10 0.3 0.5 0.7 1 2 3 5 7 15 10 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Saturation Region C, CAPACITANCE (pF) 10K 5K 3K 2K Cib 1K 500 300 200 100 Cob 50 30 20 10 0.1 TJ = 25°C ftest = 1 kHz 0.3 0.5 1 3 5 10 30 50 100 300 600 1K VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB = 10, TC = 100°C, VCE(pk) = 250 V 1K 700 500 10K 7K t c , CROSSOVER TIME (ns) t sv, STORAGE TIME (ns) 5K VBE(off) = 0 V 3K 2K IB2 = 2 (IB1) VBE(off) = 2 V 1K 700 500 VBE(off) = 5 V 300 300 VBE(off) = 0 V 200 IB2 = 2 (IB1) VBE(off) = 5 V 100 70 50 VBE(off) = 2 V 30 20 100 1.5 3 5 10 7 10 1.5 15 2 3 5 7 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. Storage Time Figure 7. Crossover Time t fi , COLLECTOR CURRENT FALL TIME (ns) 2 10 15 1K 700 500 200 VBE(off) = 0 V 100 70 50 IB2 = 2 (IB1) VBE(off) = 2 V 30 20 VBE(off) = 5 V 10 1.5 2 3 5 7 10 15 IC, COLLECTOR CURRENT (AMPS) Figure 8. Fall Time VCE(pk) 90% VCE(pk) IC tsv 90% IC(pk) trv tfi tti tc VCE IB 10% VCE(pk) 90% IB1 10% IC(pk) 2% IC t, TIME Figure 9. Inductive Switching Measurements 4 I B2 , REVERSE BASE CURRENT (AMPS) 10 IC(pk) 9 8 7 6 IB1 = 2 A 5 1A 4 3 IC = 10 A TC = 25°C 2 1 0 0 1 2 3 4 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 10. Peak Reverse Base Current Motorola Bipolar Power Transistor Device Data 5 Table 1. Inductive Load Switching Drive Circuit VCEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 20 mA +15 1 µF 150 Ω 100 µF 100 Ω MTP8P10 MTP8P10 A +10 MPF930 RB2 50 Ω MUR105 MJE210 1 µF 150 Ω Voff *Tektronix AM503 *P6302 or Equivalent Scope — Tektronix 7403 or Equivalent t1 VCE IB1 IB RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 MTP12N10 500 µF VCE(pk) Inductive Switching L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RB1 MPF930 IC(pk) IC IB2 *IC A (ICpk) [ LcoilVCC T1 T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A. L T.U.T. 1N4246GP +V *IB Vclamp 0V VCC –V Table 2. Resistive Load Switching +15 td and tr H.P. 214 OR EQUIV. P.G. 1 µF ts and tf 150 Ω 100 µF 100 Ω V(off) adjusted to give specified off drive T.U.T. RB = 8.5 Ω RL 50 RB1 MPF930 A +10 V MPF930 VCC RB2 50 Ω ≈ 11 V 0V tr ≤ 15 ns VCC 250 Vdc RL 25 Ω IC 10 A IB 1A *Tektronix AM503 *P6302 or Equivalent VCE VCC 250 V IC 10 A IB1 1.0 A IB2 Per Spec RB1 15 Ω RB2 Per Spec RL 25 Ω VCE(dsat) = DYNAMIC SATURATION VOLTAGE AND IS MEASURED FROM THE 90% POINT OF IB1 (t = 0) TO A MEASUREMENT POINT ON THE TIME AXIS (t1, t2 or t3 etc.) 90% IB1 IB1 0 MUR105 MTP12N10 MJE210 500 µF 1 µF 150 Ω Voff T.U.T. A *IC *IB RL VCC VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Vin 0 MTP8P10 MTP8P10 *IC *IB t1 t2 t3 t4 t, TIME t5 t6 t7 Figure 11. Definition of Dynamic Saturation Measurement Motorola Bipolar Power Transistor Device Data t8 16 14 t = 1 µs IC = 10 A 12 t = 2 µs 10 8 6 4 2 0 MAXIMUM TYPICAL 0.5 1 1.5 IB, BASE CURRENT (AMPS) 2 2.5 Figure 12. Dynamic Saturation Voltage 5 DYNAMIC SATURATION VOLTAGE For bipolar power transistors low DC saturation voltages are achieved by conductivity modulating the collector region. Since conductivity modulation takes a finite amount of time, DC saturation voltages are not achieved instantly at turn–on. In bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. The MJ16110 has been designed specifically to minimize these losses. Performance is roughly four times better than the original version of MJ16010. From a measurement point of view, dynamic saturation voltage is defined as collector–emitter voltage at a specific point in time after IB1 has been applied, where t = 0 is the 90% point on the IB1 rise time waveform, This definition is illustrated in Figure 11. Performance data was taken in the circuit that is shown in Figure 13. The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation. Dynamic saturation performance is illustrated in Figure 12. The MJ16110 reaches DC saturation levels in approximately 2 µs, provided that sufficient base drive is provided. The dependence of dynamic saturation voltage upon base drive suggests a spike of IB1 at turn–on to minimize dynamic saturation losses, and also avoid overdrive at turn–off. However, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of IB1. + 24 Q1 MJ11012 1N5314 1k 4 100 µF 8 1N4111 7 1k 10 k U1 MC1455 6 100 pF (OSCILLATOR) 3 2 1 5 0.1 µF 2.4 Ω 20 W 100 Ω 1W Q4 IRFD9120 4 10 µF IC 47 Ω 1W 8 MUR405 1.8 k IRFD9123 500 Ω 7 10 k 1N5831 2.4 mH Q5 MTM8P08 0.01 µF 1N914 0.01 µF Q2 6 2 IB V CE MUR405 Q6 MTP25N06 3 1 Q3 IRFD113 5 0.01 µF 0.01 µF Figure 13. Dynamic Saturation Test Circuit GUARANTEED SAFE OPERATING AREA INFORMATION 20 IC, COLLECTOR CURRENT (AMPS) 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 10 µs MJ16110 MJW16110 REGION II — EXPANDED FBSOA USING MUR870 ULTRA-FAST RECTIFIER, SEE FIGURE 16 IC, COLLECTOR CURRENT (AMPS) TC = 25°C 50 1 ms 100 ns dc II BONDING WIRE LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT 1 18 16 IC/IB1 = 5 TJ ≤ 100°C 14 12 10 8 VBE(off) = 1 to 5 V 6 4 2 2 3 5 10 20 30 50 100 200 300 500 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0 VBE(off) = 0 V 0 200 400 600 100 300 500 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 15. Reverse Bias Safe Operating Area Figure 14. Forward Bias Safe Operating Area VCE (650 V MAX) +15 150 Ω 1 µF 100 Ω 100 µF 10 µF MTP8P10 MTP8P10 RB1 10 mH MUR870 MUR1100 MPF930 MUR105 +10 T.U.T. MPF930 RB2 MUR105 50 Ω MTP12N10 MJE210 500 µF 150 Ω 1 µF Note: Test Circuit for Ultra–fast FBSOA Note: RB2 = 0 and VOff = – 5 Volts VOff Figure 16. Switching Safe Operating Area 6 Motorola Bipolar Power Transistor Device Data 700 POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 MJ16110 MJW16110 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) 160 200 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 17. Power Derating 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 P(pk) RθJC(t) = r(t) RθJC RθJC = 1 or 0.92°CW TJ(pk) – TC = P(pk) RθJC(t) 0.03 0.03 0.02 t1 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 t2 DUTY CYCLE, D = t1/t2 0.2 0.3 1 0.5 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 18. Thermal Response SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data in Figure 14 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 17. T J(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be Motorola Bipolar Power Transistor Device Data accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. SWITCHMODE DESIGN CONSIDERATIONS FBSOA Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector–emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V (BR)CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). TURN–ON Safe turn–on load line excursions are bounded by pulsed FBSOA curves. The 10 µs curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra– fast recovery rectifiers, and are valid for turn–on crossover times less than 100 ns (AN952). 7 SWITCHMODE DESIGN CONSIDERATIONS (Cont.) At voltages above 75% of V (BR)CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn–on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). TURN–OFF A bipolar transistor’s ability to withstand turn–off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875). Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). RBSOA Reversed Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). DESIGN SAMPLES Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. OPERATION ABOVE V(BR)CEO(sus) When bipolars are operated above collector–emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn–on, as is a stiff negative bias needed for safe turn–off. Any hiccup in the base–drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. 8 BAKER CLAMPS Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR170 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR470 types are well–suited for higher drive requirements (see Article Reprint AR131). Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. C SEATING PLANE –T– E D K 2 PL 0.13 (0.005) U M Y M DIM A B C D E G H K L N Q U V –Y– L V T Q M 2 H G B M T Y 1 –Q– 0.13 (0.005) M INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (FORMERLY TO–3) ISSUE Z 0.25 (0.010) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. –T– –Q– T B M E –B– C 4 U A R 1 K 2 3 –Y– P F V D 0.25 (0.010) M L Y Q S H J DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 20.40 20.90 15.44 15.95 4.70 5.21 1.09 1.30 1.50 1.63 1.80 2.18 5.45 BSC 2.56 2.87 0.48 0.68 15.57 16.08 7.26 7.50 3.10 3.38 3.50 3.70 3.30 3.80 5.30 BSC 3.05 3.40 STYLE 3: PIN 1. 2. 3. 4. G INCHES MIN MAX 0.803 0.823 0.608 0.628 0.185 0.205 0.043 0.051 0.059 0.064 0.071 0.086 0.215 BSC 0.101 0.113 0.019 0.027 0.613 0.633 0.286 0.295 0.122 0.133 0.138 0.145 0.130 0.150 0.209 BSC 0.120 0.134 BASE COLLECTOR EMITTER COLLECTOR CASE 340F–03 TO–247AE ISSUE E Motorola Bipolar Power Transistor Device Data 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *MJ16110/D* MJ16110/D