Hittite HMC-ALH382 Gaas hemt low noise amplifier, 57 - 65 ghz Datasheet

HMC-ALH382
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Amplifiers - low noise - Chip
1
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Typical Applications
Features
This HMC-ALH382 is ideal for:
Noise Figure: 3.8 dB
• Short Haul / High Capacity Links
P1dB: +12 dBm
• Wireless LANs
Gain: 21 dB
• Military & Space
Supply Voltage: +2.5V
50 Ohm Matched Input/Output
Die Size: 1.55 x 0.73 x 0.1 mm
General Description
Functional Diagram
The HMC-ALH382 is a high dynamic range, four
stage GaAs HEMT MMIC Low Noise Amplifier
(LNA) which operates between 57 and 65 GHz. The
HMC-ALH382 features 21 dB of small signal gain,
4 dB of noise figure and an output power of +12
dBm at 1dB compression from a +2.5V supply
voltage. All bond pads and the die backside are Ti/
Au metallized and the amplifier device is fully
passivated for reliable operation. This versatile LNA
is compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 64 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
57 - 65
19
GHz
21
Noise Figure
4
Input Return Loss
12
Units
dB
5.5
dB
dB
Output Return Loss
10
dB
Output Power for 1 dB Compression (P1dB)
12
dBm
Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)
64
100
mA
*Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 64 mA
1-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH382
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GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
6
25
5
NOISE FIGURE (dB)
30
GAIN (dB)
20
15
10
5
4
3
2
1
0
0
57
59
61
63
65
57
59
FREQUENCY (GHz)
61
63
65
FREQUENCY (GHz)
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
1
Noise Figure vs. Frequency
-10
-15
-20
-10
Amplifiers - low noise - Chip
Linear Gain vs. Frequency
-15
-20
57
59
61
FREQUENCY (GHz)
63
65
57
59
61
63
65
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-2
HMC-ALH382
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Amplifiers - low noise - Chip
1
Wideband Linear Gain
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Wideband Input Return Loss
Wideband Output Return Loss
Absolute Maximum Ratings
1-3
Drain Bias Voltage
+5.5 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
Channel Temperature
180 °C
Thermal Resistance
(channel to die bottom)
108.4 °C/W
Continuous Pdiss (T= 85 °C)
(derate 9.2 mW/°C above 85 °C)
0.87W
RF Input Power
-5 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
Die Packaging Information [1]
Standard
Alternate
GP-5 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Amplifiers - low noise - Chip
1
Outline Drawing
7. OVERALL DIE SIZE ±.002”
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
3
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
4
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-4
HMC-ALH382
v03.1210
Assembly Diagram
Amplifiers - low noise - Chip
1
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
1-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH382
GaAs HEMT LOW NOISE
AMPLIFIER, 57 - 65 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air
bridges and should not be touched with vacuum collet, tweezers, or fingers.
0.150mm (0.005”) Thick
Moly Tab
Amplifiers - low noise - Chip
v03.1210
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
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