Fairchild FDH5500 F085 N-channel ultrafet power mosfet solenoid and motor control Datasheet

FDH5500_F085
N-Channel UltraFET Power MOSFET
55V, 75A, 7mΩ
Features
Applications
„ Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A
„ DC Linear Mode Control
„ Typ Qg(10) = 118nC at VGS = 10V
„ Solenoid and Motor Control
„ Simulation Models
„ Switching Regulators
-Temperature Compensated PSPICE and SABERTM
Models
„ Automotive Systems
„ Peak Current vs Pulse Width Curve
„ UIS Rating Curve
„ Related Literature
-TB334, “Guidelines for Soldering Surface Mount
Componets to PC Boards“
„ Qualified to AEC Q101
„ RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDH5500_F085 Rev. A1
1
www.fairchildsemi.com
FDH5500_F085 N-Channel UltraFET Power MOSFET
October 2008
Symbol
Drain to Source Voltage
VDSS
Parameter
Ratings
55
(Note 1)
VDGR
Drain to Gate Voltage (RGS = 20kΩ)
VGS
Gate to Source Voltage
(Note 1)
Drain Current Continuous (TC < 135oC, VGS = 10V)
ID
V
V
A
See Figure 4
Single Pulse Avalanche Energy
PD
55
±20
75
Pulsed
EAS
Units
V
(Note 2)
864
mJ
Power Dissipation
375
W
Dreate above 25oC
2.5
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to + 175
TL
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
300
Tpkg
Max. Package Temp. for Soldering (Package Body for 10sec)
260
o
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
0.4
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area
30
o
C/W
Package Marking and Ordering Information
Device Marking
FDH5500
Device
FDH5500_F085
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
55
-
-
VDS = 50V, VGS = 0V
-
-
1
VDS = 45V
-
-
250
VGS = ±20V
-
-
±100
TC = 150oC
μA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
2
2.9
4
V
rDS(on)
Drain to Source On Resistance
ID = 75A, VGS= 10V
-
5.2
7
mΩ
VDS = 25V, VGS = 0V,
f = 1MHz
-
3565
-
pF
-
1310
-
pF
-
395
-
pF
-
206
268
nC
-
118
153
nC
-
6.2
8.1
nC
-
17.8
-
nC
-
51
-
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 20V
VGS = 0 to 20V
Qg(10)
Total Gate Charge at 10V
VGS = 0 to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller“ Charge
FDH5500_F085 Rev. A1
2
VDD = 30V
ID = 75A
RL = 0.4Ω
Ig = 1.0mA
www.fairchildsemi.com
FDH5500_F085 N-Channel UltraFET Power MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
Turn-On Time
-
-
185
ns
td(on)
Turn-On Delay Time
-
13.7
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
toff
Turn-Off Time
VDD = 30V, ID = 75A,
RL = 0.4Ω, VGS = 10V,
RGS = 2.5Ω
-
102
-
ns
-
34
-
ns
-
22
-
ns
-
-
91
ns
-
1
1.25
V
-
60
78
ns
-
77
100
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 75A
IF = 75A, dISD/dt = 100A/μs
Notes:
1: Starting TJ = 25oC to175oC.
2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDH5500_F085 Rev. A1
3
www.fairchildsemi.com
FDH5500_F085 N-Channel UltraFET Power MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
180
1.0
150
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY PACKAGE
120
VGS = 10V
90
60
30
0
175
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
0.01
-5
10
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
IDM, PEAK CURRENT (A)
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 4. Peak Current Capability
FDH5500_F085 Rev. A1
4
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FDH5500_F085 N-Channel UltraFET Power MOSFET
Typical Characteristics
1000
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
1000
100us
100
1ms
10
10ms
DC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
200
0.1
1
10
100
1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
80
TJ = 175oC
40
TJ = -55oC
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
VGS = 6V
VGS = 5V
40
VGS = 4.5V
TJ = 25oC
0
0
0
1
2
3
4
5
6
VGS, GATE TO SOURCE VOLTAGE (V)
7
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
ID = 75A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30
20
TJ = 175oC
10
o
TJ = 25 C
0
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDH5500_F085 Rev. A1
0
1
2
3
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 7. Transfer Characteristics
40
VGS = 5.5V
80
2.2
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 75A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
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FDH5500_F085 N-Channel UltraFET Power MOSFET
Typical Characteristics
1.2
1.20
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
CAPACITANCE (pF)
Ciss
1000
Coss
100
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
Figure 13. Capacitance vs Drain to Source
Voltage
FDH5500_F085 Rev. A1
1.10
1.05
1.00
0.95
0.90
0.85
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
f = 1MHz
VGS = 0V
ID = 1mA
1.15
10
ID = 75A
8
VDD = 30V
VDD = 20V
6
VDD = 40V
4
2
0
0
20
40
60
80
100
Qg, GATE CHARGE(nC)
120
140
Figure 14. Gate Charge vs Gate to Source Voltage
6
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FDH5500_F085 N-Channel UltraFET Power MOSFET
Typical Characteristics
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Rev. I36
FDH5500_F085 Rev. A1
7
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FDH5500_F085 N-Channel UltraFET Power MOSFET
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