Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA $ ! " # !""# !" Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 3 • Low rDS(on) Provides Higher Efficiency and Extends Battery Life 3 DRAIN • Miniature SOT–23 Surface Mount Package Saves Board Space 1 2 CASE 318–07, Style 21 SOT–23 (TO–236AB) 1 GATE 2 SOURCE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) ID ID IDM 300 240 750 mAdc Total Power Dissipation @ TA = 25°C(1) PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Thermal Resistance — Junction–to–Ambient RθJA 625 °C/W TL 260 °C Rating Drain–to–Source Voltage Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds DEVICE MARKING N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. ORDERING INFORMATION Device Reel Size Tape Width Quantity MMBF0201NLT1 7″ 12 mm embossed tape 3000 MMBF0201NLT3 13″ 12 mm embossed tape 10,000 HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Transistors, FETs and Diodes Device Data Motorola, Small–Signal Inc. 1995 1 MMBF0201N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 20 — — Vdc — — — — 1.0 10 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) µAdc Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) rDS(on) — — 0.75 1.0 1.0 1.4 gFS — 450 — mMhos pF ON CHARACTERISTICS(1) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss — 45 — Output Capacitance (VDS = 5.0 V) Coss — 25 — Transfer Capacitance (VDG = 5.0 V) Crss — 5.0 — td(on) — 2.5 — tr — 2.5 — td(off) — 15 — tf — 0.8 — QT — 1400 — pC IS — — 0.3 A Pulsed Current ISM — — 0.75 Forward Voltage(2) VSD — 0.85 — SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 Ω) Fall Time Gate Charge (See Figure 5) ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF0201N TYPICAL ELECTRICAL CHARACTERISTICS 1.0 1.0 I D , DRAIN CURRENT (AMPS) 0.8 0.6 0.4 125°C 0.2 0 – 55°C 25°C 0 1 2 3 4 5 ON–RESISTANCE (OHMS) VGS = 4 V 0.6 VGS = 10, 9, 8, 7, 6 V 0.4 0.2 VGS = 3 V 0 0.3 0.9 Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics 1.2 0.9 VGS = 4.5 V 0.6 VGS = 10 V 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) 1 0.8 2.0 1.5 1.0 0.5 0 0 5 10 15 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1.10 14 1.05 ID = 250 µA VGS(th) , NORMALIZED 1.00 VDS = 16 V ID = 300 mA 10 8 6 4 20 Figure 4. On–Resistance versus Gate–to–Source Voltage 16 12 1.4 2.4 Figure 3. On–Resistance versus Drain Current 0.95 0.90 0.85 0.80 0.75 0.70 2 0 0 1.2 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.3 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 0.6 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 1.5 0 0.8 0 6 RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS) I D , DRAIN CURRENT (AMPS) VGS = 5 V 0.65 160 450 2000 3400 0.60 –25 0 25 50 75 100 TEMPERATURE (°C) Figure 5. Gate Charge Figure 6. Threshold Voltage Variance Over Temperature Motorola Small–Signal Transistors, FETs and Diodes Device Data 150 125 Qg, TOTAL GATE CHARGE (pC) 3 MMBF0201N TYPICAL ELECTRICAL CHARACTERISTICS 100 1.6 VGS = 10 V @ 300 mA 80 C, CAPACITANCE (pF) RDS(on) , NORMALIZED (OHMS) 1.8 1.4 1.2 VGS = 4.5 V @ 100 mA 1.0 60 Ciss 40 Coss 20 0.8 Crss 0.6 –50 –25 0 25 50 75 100 125 0 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. On–Resistance versus Junction Temperature Figure 8. Capacitance 20 SOURCE CURRENT (AMPS) 10 1.0 0.1 125°C 25°C – 55°C 0.01 0.001 0 0.3 0.6 0.9 1.2 SOURCE–TO–DRAIN FORWARD VOLTAGE (VOLTS) 1.4 Figure 9. Source–to–Drain Forward Voltage versus Continuous Current (IS) 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF0201N INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MMBF0201N PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C H D K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN CASE 318–07 SOT–23 (TO–236AB) ISSUE AD Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ *MMBF0201N/D* Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBF0201N/D