Kexin BAT68-06W Silicon schottky diode Datasheet

Diodes
SMD Type
Silicon Schottky Diode
BAT68-04W,BAT68-05W,BAT68-06W
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute M axim um Ratings Ta = 25
Param eter
Sym bol
Value
Unit
Diode reverse voltage
VR
8
V
Forward current
IF
130
mA
mW
P tot
150
Junction tem perature
Tj
150
Storage tem perature
T stg
-55 to +150
Total power dissipation
TS
92
Junction - soldering point(Note 1)
R thJS
K/W
390
Note
1.For calculation of R thJA please refer to Application Note Therm al Resistance
Electrical Characteristics Ta = 25
Param eter
Sym bol
Breakdown voltage
Conditions
V (BR)
Reverse current
I (BR) = 10
A
Min
Typ
8
0.1
1.2
V R = 1 V, T A = 60
Forward voltage
IF = 1 m A
VF
I F = 10 m A
340
Unit
V
VR = 1 V
IR
Max
318
340
390
500
Diode capacitance
CT
V R = 0 , f = 1 MHz
1
Differential forward resistance
RF
I F = 5 m A, f = 10 KHz
10
A
mV
pF
Marking
Type
BAT68-04W
BAT68-05W
BAT68-06W
Marking
84s
85s
86s
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