BCR8KM-12LB Triac Medium Power Use REJ03G0319-0100 Rev.1.00 Aug.20.2004 Features • • • • • • Insulated Type • Planar Passivation Type • Refer to the recommended circuit values around the triac before using. IT (RMS) : 8 A VDRM : 600 V IFGTI , IRGTI, IRGTⅢ : 30 mA (20 mA)Note5 Viso : 2000 V The product guaranteed maximum junction temperature 150°C. Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 7 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR8KM-12LB Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 114°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit IDRM VTM — — — — 2.0 1.6 mA V Tj = 150°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c — — — — — — 0.2/0.1 — 10/1 — — — — — — — — — 1.5 1.5 1.5 30Note5 30Note5 30Note5 — 3.6 — V V V mA mA mA V °C/W V/µs Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Test conditions Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage Tj = 125°C/150°C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125°C/150°C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR8KM-12LB Performance Curves Maximum On-State Characteristics 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 70 60 50 40 30 20 10 0 0 10 2 3 5 7 10 1 2 3 5 7 10 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 –1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 80 Conduction Time (Cycles at 60Hz) 10 7 5 3 VGT = 1.5V 2 10 90 On-State Voltage (V) 3 2 VGM = 10V 1 Surge On-State Current (A) 100 103 7 5 3 2 2 Typical Example IRGT III 102 I ,I 7 FGT I RGT I 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 102 7 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 7 Transient Thermal Impedance (°C/W) On-State Current (A) 102 7 5 Rated Surge On-State Current 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR8KM-12LB No Fins 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction Resistive, inductive loads 20 0 0 2 4 6 8 160 Ambient Temperature (°C) Case Temperature (°C) 16 On-State Power Dissipation (W) 10 7 5 3 2 2 10 7 5 3 2 1 10 7 5 3 2 0 10 7 5 3 2 –1 10 1 160 All fins are black painted aluminum and greased 140 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 40 20 0 0 10 12 14 16 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 3 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 7 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 6 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR8KM-12LB Latching Current vs. Junction Temperature 3 103 Typical Example Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120140 160 Distribution T2+, G– Typical Example 2 10 7 5 3 2 1 10 7 5 3 T2+, G+ 2 T –, G– Typical Example 2 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 160 10 7 5 3 2 Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 80 60 III Quadrant 40 20 I Quadrant 0 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 140 Typical Example Tj = 150°C 120 100 80 60 40 III Quadrant 20 I Quadrant 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Rev.1.00, Aug.20.2004, page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 Minimum 5 Characteristics Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant Value 3 2 0 10 7 0 10 III Quadrant 2 3 5 7 10 1 2 3 5 7 10 Rate of Decay of On-State Commutating Current (A/ms) 2 BCR8KM-12LB Gate Trigger Current vs. Gate Current Pulse Width 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj=150°C) Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz III Quadrant I Quadrant 3 2 Minimum Characteristics Value 0 10 7 0 10 5 7 101 2 3 2 3 5 7 102 3 10 7 5 Typical Example IFGT I 3 2 IRGT I IRGT III 102 7 5 3 2 101 0 10 2 3 5 7 10 1 2 3 5 7 10 2 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I A V V 330Ω Test Procedure II 6Ω 6V R1 A 6V 330Ω 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR8KM-12LB Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Standard order code example BCR8KM-12LB BCR8KM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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