Cypress CY7C1483V33-100AXI 72-mbit (2m x 36/4m x 18/1m x 72) flow-through sram Datasheet

CY7C1481V33
CY7C1483V33
CY7C1487V33
72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM
Functional Description[1]
Features
•
•
•
•
•
Supports 133 MHz bus operations
2M x 36/4M x 18/1M x 72 common IO
3.3V core power supply (VDD)
2.5V or 3.3V I/O supply (VDDQ)
Fast clock-to-output times
— 6.5 ns (133 MHz version)
• Provide high-performance 2-1-1-1 access rate
• User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed write
• Asynchronous output enable
• CY7C1481V33, CY7C1483V33 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1487V33
available in Pb-free and non-Pb-free 209 ball FBGA
package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode option
The CY7C1481V33/CY7C1483V33/CY7C1487V33 is a 3.3V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133 MHz version). A two-bit on-chip counter captures
the first address in a burst and increments the address
automatically for the rest of the burst access. All synchronous
inputs are gated by registers controlled by a
positive-edge-triggered Clock Input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelining
Chip Enable (CE1), depth-expansion Chip Enables (CE2 and
CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write
Enables (BWx and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and the
ZZ pin.
The CY7C1481V33/CY7C1483V33/CY7C1487V33 allows
either interleaved or linear burst sequences, selected by the
MODE input pin. A HIGH selects an interleaved burst
sequence, while a LOW selects a linear burst sequence. Burst
accesses can be initiated with the Processor Address Strobe
(ADSP) or the cache Controller Address Strobe (ADSC)
inputs. Address advancement is controlled by the Address
Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1481V33/CY7C1483V33/CY7C1487V33 operates
from a +3.3V core power supply while all outputs may operate
with either a +2.5 or +3.3V supply. All inputs and outputs are
JEDEC standard JESD8-5 compatible.
Selection Guide
133 MHz
100 MHz
Unit
Maximum Access Time
6.5
8.5
ns
Maximum Operating Current
335
305
mA
Maximum CMOS Standby Current
150
150
mA
Note
1. For best practices recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.
Cypress Semiconductor Corporation
Document #: 38-05284 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 01, 2007
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Logic Block Diagram – CY7C1481V33 (2M x 36)
ADDRESS
REGISTER
A 0, A1, A
A [1:0]
MODE
BURST Q1
COUNTER
AND LOGIC
Q0
CLR
ADV
CLK
ADSC
ADSP
DQ D , DQP D
DQ D , DQP D
BW D
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
DQ C, DQP C
DQ C, DQP C
BW C
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
DQ B , DQP B
BW B
DQ B , DQP B
BYTE
BYTE
WRITE REGISTER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQ s
DQP A
DQP B
DQP C
DQP D
WRITE REGISTER
DQ A , DQP A
BW A
BWE
DQ A , DQPA
BYTE
BYTE
WRITE REGISTER
WRITE REGISTER
INPUT
REGISTERS
GW
ENABLE
REGISTER
CE1
CE2
CE3
OE
ZZ
SLEEP
CONTROL
Logic Block Diagram – CY7C1483V33 (4M x 18)
A0,A1,A
ADDRESS
REGISTER
A[1:0]
MODE
BURST Q1
COUNTER AND
LOGIC
CLR
Q0
ADV
CLK
ADSC
ADSP
BW B
DQ B ,DQP B
WRITE REGISTER
BW A
DQ A ,DQP A
WRITE REGISTER
DQ B ,DQP B
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQs
DQP A
DQP B
DQ A ,DQP A
WRITE DRIVER
BWE
GW
CE 1
CE 2
CE 3
ENABLE
REGISTER
INPUT
REGISTERS
OE
ZZ
SLEEP
CONTROL
Document #: 38-05284 Rev. *H
Page 2 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Logic Block Diagram – CY7C1487V33 (1M x 72)
ADDRESS
REGISTER
A0, A1,A
A[1:0]
MODE
Q1
BINARY
COUNTER
CLR
Q0
ADV
CLK
ADSC
ADSP
BW H
DQ H , DQPH
WRITE DRIVER
DQ H , DQPH
WRITE DRIVER
BW G
DQ F, DQPF
WRITE DRIVER
DQ G , DQPG
WRITE DRIVER
BW F
DQ F, DQPF
WRITE DRIVER
DQ F, DQPF
WRITE DRIVER
BW E
DQ E , DQPE
WRITE DRIVER
DQ
E , DQP
BYTE
“a” E
WRITE DRIVER
BW D
DQ D, DQPD
WRITE DRIVER
DQ D, DQPD
WRITE DRIVER
BW C
DQ C, DQPC
WRITE DRIVER
DQ C, DQPC
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
BW B
BW A
BWE
GW
CE1
CE2
CE3
OE
ZZ
DQ B , DQPB
WRITE DRIVER
DQ B , DQPB
WRITE DRIVER
OUTPUT
BUFFERS
E
DQ A , DQPA
WRITE DRIVER
DQ A , DQPA
WRITE DRIVER
ENABLE
REGISTER
OUTPUT
REGISTERS
PIPELINED
ENABLE
INPUT
REGISTERS
DQs
DQP A
DQP B
DQP C
DQP D
DQP E
DQP F
DQP G
DQP H
SLEEP
CONTROL
Document #: 38-05284 Rev. *H
Page 3 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Pin Configurations
NC
NC
NC
CY7C1483V33
(4M x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Document #: 38-05284 Rev. *H
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1481V33
(2Mx 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
A
A
VSS
VDD
A
A
A
A
A
A
A
A
A
DQPC
DQC
DQC
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-Pin TQFP Pinout
Page 4 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Pin Configurations (continued)
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1481V33 (2M x 36)
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
1
A
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
NC/144M
A
CE2
BWD
BWA
CLK
GW
OE
ADSP
A
NC/576M
DQPC
DQC
NC
DQC
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
NC
DQD
DQC
VDD
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQB
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
DQC
NC
DQD
VDDQ
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
A
A
A
TDI
A1
TDO
A
A
A
A
R
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
9
10
11
CY7C1483V33 (4M x 18)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
CE1
BWB
NC/144M
A
CE2
NC
NC
CE3
BWE
ADSC
ADV
A
BWA
CLK
GW
OE
ADSP
A
NC
NC
NC
DQB
VDDQ
VSS
VDD
VSS
VDDQ
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VSS
VDDQ
NC/1G
NC
DQPA
DQA
NC
DQB
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
NC
DQB
NC
NC
DQB
DQB
NC
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
NC
NC
DQA
DQA
ZZ
NC
R
A
NC/576M
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
DQB
DQPB
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
A
A
A
TDI
A1
TDO
A
A
A
A
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05284 Rev. *H
Page 5 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Pin Configurations (continued)
209-Ball FBGA (14 x 22 x 1.76 mm) Pinout
CY7C1487V33 (1M × 72)
1
2
3
A
DQG
DQG
B
DQG
DQG
BWSC
BWSG NC/288M
C
DQG
DQG
BWSH
BWSD NC/144M CE1
D
DQG
DQG
VSS
NC
NC/1G
OE
E
DQPG
DQPC
VDDQ
VDDQ
VDD
VDD
F
DQC
DQC
VSS
VSS
VSS
G
DQC
VDDQ
VDDQ
H
DQC
DQC
J
DQC
K
A
4
CE2
5
6
ADSP ADSC
7
ADV
8
9
10
11
CE3
A
DQB
DQB
A
BWSB
BWSF
DQB
DQB
NC/576M
BWSE
BWSA
DQB
DQB
NC
VSS
DQB
DQB
VDD
VDDQ
VDDQ
DQPF
DQPB
NC
VSS
VSS
VSS
DQF
DQF
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQF
DQF
DQC
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQF
DQF
NC
NC
CLK
NC
VSS
VSS
VSS
NC
NC
NC
NC
L
DQH
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
M
DQH
DQH
VSS
VSS
VSS
NC
VSS
VSS
VSS
DQA
DQA
N
DQH
DQH
VDDQ
VDDQ
VDD
NC
VDD
VDDQ
VDDQ
DQA
DQA
P
DQH
DQH
VSS
VSS
VSS
ZZ
VSS
VSS
VSS
DQA
DQA
R
DQPD
DQPH VDDQ
VDDQ
VDD
VDD
VDD
VDDQ
VDDQ
T
DQD
DQD
VSS
NC
NC
MODE
NC
NC
VSS
DQE
DQE
U
DQD
DQD
A
A
A
A
A
A
A
DQE
DQE
V
DQD
DQD
A
A
A
A1
A
A
A
DQE
DQE
W
DQD
DQD
TMS
TDI
A
A0
A
TCK
DQE
DQE
DQC
Document #: 38-05284 Rev. *H
BW
GW
TDO
DQPA
DQPE
Page 6 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Pin Definitions
Pin Name
IO
Description
A0, A1, A
InputSynchronous
Address Inputs Used to Select One of the Address Locations. Sampled at the
rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are
sampled active. A[1:0] feed the two-bit counter.
BWA,BWB,BWC,BWD,
BWE,BWF,BWG,BWH
InputSynchronous
Byte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes
to the SRAM. Sampled on the rising edge of CLK.
GW
InputSynchronous
Global Write Enable Input, Active LOW. When asserted LOW on the rising edge
of CLK, a global write is conducted (ALL bytes are written, regardless of the values
on BWX and BWE).
CLK
InputClock
Clock Input. Captures all synchronous inputs to the device. Also used to increment
the burst counter when ADV is asserted LOW during a burst operation.
CE1
InputSynchronous
Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2 and CE3 to select or deselect the device. ADSP is ignored if
CE1 is HIGH. CE1 is sampled only when a new external address is loaded.
CE2
InputSynchronous
Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select or deselect the device. CE2 is sampled only
when a new external address is loaded.
CE3
InputSynchronous
Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select or deselect the device. CE3 is sampled only
when a new external address is loaded.
OE
InputAsynchronous
Output Enable, Asynchronous Input, Active LOW. Controls the direction of the IO
pins. When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins
are tri-stated, and act as input data pins. OE is masked during the first clock of a read
cycle when emerging from a deselected state.
ADV
InputSynchronous
Advance Input Signal, Sampled on the Rising Edge of CLK. When asserted, it
automatically increments the address in a burst cycle.
ADSP
InputSynchronous
Address Strobe from Processor, Sampled on the Rising Edge of CLK, Active
LOW. When asserted LOW, addresses presented to the device are captured in the
address registers. A[1:0] are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is
deasserted HIGH
ADSC
InputSynchronous
Address Strobe from Controller, Sampled on the Rising Edge of CLK, Active
LOW. When asserted LOW, addresses presented to the device are captured in the
address registers. A[1:0] are also loaded into the burst counter. When ADSP and
ADSC are both asserted, only ADSP is recognized.
BWE
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This
signal must be asserted LOW to conduct a byte write.
ZZ
InputAsynchronous
ZZ “Sleep” Input, Active HIGH. When asserted HIGH, places the device in a
non-time-critical “sleep” condition with data integrity preserved. For normal operation,
this pin must be LOW or left floating. ZZ pin has an internal pull down.
DQs
IOSynchronous
Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that
is triggered by the rising edge of CLK. As outputs, they deliver the data contained in
the memory location specified by the addresses presented during the previous clock
rise of the read cycle. The direction of the pins is controlled by OE. When OE is
asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed
in a tri-state condition.The outputs are automatically tri-stated during the data portion
of a write sequence, during the first clock when emerging from a deselected state,
and when the device is deselected, regardless of the state of OE.
DQPX
IOSynchronous
Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs.
During write sequences, DQPx is controlled by BWX correspondingly.
MODE
Input-Static
Selects Burst Order. When tied to GND, selects linear burst sequence. When tied
to VDD or left floating, selects interleaved burst sequence. This is a strap pin and must
remain static during device operation. Mode Pin has an internal pull up.
Document #: 38-05284 Rev. *H
Page 7 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Pin Definitions (continued)
Pin Name
VDD
IO
Power Supply
VDDQ
Ground
[2}
TDO
Power supply inputs to the core of the device.
IO Power Supply Power supply for the IO circuitry.
VSS
VSSQ
Description
I/O Ground
JTAG Serial
Output
Synchronous
Ground for the core of the device.
Ground for the IO circuitry.
Serial Data-Out to the JTAG Circuit. Delivers data on the negative edge of TCK. If
the JTAG feature is not used, this pin should be left unconnected. This pin is not
available on TQFP packages.
TDI
JTAG Serial Input Serial Data-In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG
Synchronous
feature is not used, this pin can be left floating or connected to VDD through a pull up
resistor. This pin is not available on TQFP packages.
TMS
JTAG Serial Input Serial Data-In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG
Synchronous
feature is not used, this pin can be disconnected or connected to VDD. This pin is not
available on TQFP packages.
TCK
JTAG Clock
Clock Input to the JTAG Circuit. If the JTAG feature is not used, this pin must be
connected to VSS. This pin is not available on TQFP packages.
NC
-
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are
address expansion pins and are not internally connected to the die.
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access delay from
the clock rise (t CDV) is 6.5 ns (133-MHz device).
The CY7C1481V33/CY7C1483V33/CY7C1487V33 supports
secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports
Pentium and i486™ processors. The linear burst sequence is
suited for processors that use a linear burst sequence. The
burst order is user selectable, and is determined by sampling
the MODE input. Accesses can be initiated with either the
Processor Address Strobe (ADSP) or the Controller Address
Strobe (ADSC). Address advancement through the burst
sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the
rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self timed write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide easy bank
selection and output tri-state control. ADSP is ignored if CE1
is HIGH.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE1, CE2, and CE3 are all
asserted active, and (2) ADSP or ADSC is asserted LOW (if
the access is initiated by ADSC, the write inputs must be
deasserted during this first cycle). The address presented to
the address inputs is latched into the address register and the
burst counter/control logic and presented to the memory core.
If the OE input is asserted LOW, the requested data is
available at the data outputs a maximum to tCDV after clock
rise. ADSP is ignored if CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted
active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BWX) are ignored during this first clock
cycle. If the write inputs are asserted active (see “Truth Table
for Read/Write” on page 11 for appropriate states that indicate
a write) on the next clock rise, the appropriate data is latched
and written into the device. Byte writes are supported. All IOs
are tri-stated during a byte write. Because this is a common IO
device, the asynchronous OE input signal must be deasserted
and the I/Os must be tri-stated before the presentation of data
to DQs. As a safety precaution, the data lines are tri-stated
after a write cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted
active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the write input signals (GW, BWE, and BWX)
indicate a write access. ADSC is ignored if ADSP is active
LOW.
The addresses presented are loaded into the address register
and the burst counter/control logic and delivered to the
memory core. The information presented to DQs will be written
into the specified address location. Byte writes are supported.
Note
2. Applicable for TQFP package. For BGA package VSS serves as ground for the core and the IO circuitry.
Document #: 38-05284 Rev. *H
Page 8 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
All IOs are tri-stated when a write is detected, even a byte
write. Because this is a common IO device, the asynchronous
OE input signal must be deasserted and the IOs must be
tri-stated before the presentation of data to DQs. As a safety
precaution, the data lines are tri-stated once a write cycle is
detected, regardless of the state of OE.
Burst Sequences
The CY7C1481V33/CY7C1483V33/CY7C1487V33 provides
an on-chip two-bit wraparound burst counter inside the SRAM.
The burst counter is fed by A[1:0], and can follow either a linear
or interleaved burst order. The burst order is determined by the
state of the MODE input. A LOW on MODE selects a linear
burst sequence. A HIGH on MODE selects an interleaved
burst order. Leaving MODE unconnected causes the device to
default to a interleaved burst sequence.
Sleep Mode
The ZZ input pin is asynchronous. Asserting ZZ places the
SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed.
The device must be deselected before entering the “sleep”
mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive
for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Fourth
Address
A1: A0
Linear Burst Address Table
(MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD – 0.2V
150
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ active to sleep current
This parameter is sampled
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
Document #: 38-05284 Rev. *H
2tCYC
ns
2tCYC
0
ns
ns
Page 9 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
Truth Table
The truth table for CY7C1481V33, CY7C1483V33, and CY7C1487V33 follows.[3, 4, 5, 6, 7]
Cycle Description
ADDRESS CE CE CE ZZ
1
2
3
Used
ADSP
ADSC
ADV WRITE
OE
CLK
DQ
Deselected Cycle,
Power Down
None
H
X
X
L
X
L
X
X
X
L-H
Tri-State
Deselected Cycle,
Power Down
None
L
L
X
L
L
X
X
X
X
L-H
Tri-State
Deselected Cycle,
Power Down
None
L
X
H
L
L
X
X
X
X
L-H
Tri-State
Deselected Cycle,
Power Down
None
L
L
X
L
H
L
X
X
X
L-H
Tri-State
Deselected Cycle,
Power Down
None
X
X
X
L
H
L
X
X
X
L-H
Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H
Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H
Tri-State
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes
3. X = Do Not Care, H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to enable the outputs to tri-state. OE is a do not
care for the remainder of the write cycle.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as outputs when OE is active (LOW).
Document #: 38-05284 Rev. *H
Page 10 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
Truth Table for Read/Write
The read-write truth table for CY7C1481V33 follows.[3, 8]
Function
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A (DQA, DQPA)
H
L
H
H
H
L
Write Byte B(DQB, DQPB)
H
L
H
H
L
H
Write Bytes A, B (DQA, DQB, DQPA, DQPB)
H
L
H
H
L
L
Write Byte C (DQC, DQPC)
H
L
H
L
H
H
Write Bytes C, A (DQC, DQA, DQPC, DQPA)
H
L
H
L
H
L
Write Bytes C, B (DQC, DQB, DQPC, DQPB)
H
L
H
L
L
H
Write Bytes C, B, A (DQC, DQB, DQA, DQPC, DQPB, DQPA)
H
L
H
L
L
L
Write Byte D (DQD, DQPD)
H
L
L
H
H
H
Write Bytes D, A (DQD, DQA, DQPD, DQPA)
H
L
L
H
H
L
Write Bytes D, B (DQD, DQA, DQPD, DQPA)
H
L
L
H
L
H
Write Bytes D, B, A (DQD, DQB, DQA, DQPD, DQPB, DQPA)
H
L
L
H
L
L
Write Bytes D, B (DQD, DQB, DQPD, DQPB)
H
L
L
L
H
H
Write Bytes D, B, A (DQD, DQC, DQA, DQPD, DQPC, DQPA)
H
L
L
L
H
L
Write Bytes D, C, A (DQD, DQB, DQA, DQPD, DQPB, DQPA)
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Truth Table for Read/Write
The read-write truth table for CY7C1483V33 follows.[3, 8]
Function
GW
BWE
Read
H
H
X
X
Read
H
L
H
H
Write Byte A - (DQA and DQPA)
H
L
H
L
Write Byte B - (DQB and DQPB)
H
L
L
H
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
GW
BWE
BWx[9]
Read
H
H
X
Read
H
L
All BW = H
Write Byte x – (DQx and DQPx)
H
L
L
Write All Bytes
H
L
All BW = L
Write All Bytes
L
X
X
BWB
BWA
Truth Table for Read/Write
The read-write truth table for CY7C1487V33 follows.[3, 8]
Function
Notes
8. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. An appropriate write is performed based on which byte write is active.
9. BWx represents any byte write signal BWX.To enable any byte write BWx , a Logic LOW signal must be applied at clock rise. Any number of byte writes can be
enabled at the same time for any given write.
Document #: 38-05284 Rev. *H
Page 11 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1481V33/CY7C1483V33/CY7C1487V33 incorporates a serial boundary scan test access port (TAP). This port
operates in accordance with IEEE Standard 1149.1-1990 but
does not have the set of functions required for full 1149.1
compliance. These functions from the IEEE specification are
excluded because their inclusion places an added delay in the
critical speed path of the SRAM. Note that the TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1 fully compliant TAPs. The TAP
operates using JEDEC standard 3.3V or 2.5V IO logic levels.
The CY7C1481V33/CY7C1483V33/CY7C1487V33 contains
a TAP controller, instruction register, boundary scan register,
bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, tie TCK LOW (VSS) to
prevent device clocking. TDI and TMS are internally pulled up
and may be unconnected. They may alternatively be
connected to VDD through a pull up resistor. TDO must be left
unconnected. At power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
ball unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information about loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) of any register.
(See TAP Controller Block Diagram.)
Test Data-Out (TDO)
The TDO output ball serially clocks data-out from the registers.
Whether the output is active depends on the current state of
the TAP state machine. The output changes on the falling edge
of TCK. TDO is connected to the least significant bit (LSB) of
any register. (See TAP Controller State Diagram.)
TAP Controller Block Diagram
0
Bypass Register
TAP Controller State Diagram
1
2 1 0
TEST-LOGIC
RESET
TDI
Selection
Circuitry
RUN-TEST/
IDLE
Selection
Circuitry
TDO
31 30 29 . . . 2 1 0
0
0
Instruction Register
1
SELECT
DR-SCA N
1
SELECT
IR-SCAN
0
1
x . . . . . 2 1 0
CAPTURE-IR
Boundary Scan Register
0
SHIFT-DR
0
SHIFT-IR
1
0
1
EXIT1-DR
1
TCK
EXIT1-IR
0
1
TM S
TAP CONTROLLER
0
PAUSE-DR
0
PAUSE-IR
1
0
Performing a TAP Reset
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
1
Identification Register
0
1
CAPTURE-DR
0
0
1
0
UPDATE-IR
1
0
To perform a RESET, force TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating.
At power up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
TAP Registers
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. You can leave this
Document #: 38-05284 Rev. *H
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls, as shown in the “TAP Controller Block
Diagram” on page 12. At power up, the instruction register is
loaded with the IDCODE instruction. It is also loaded with the
Page 12 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
IDCODE instruction if the controller is placed in a reset state,
as described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
enable fault isolation of the board level serial test data path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The x36 configuration has a
73-bit-long register, and the x18 configuration has a
54-bit-long register.
The boundary scan register is loaded with the contents of the
RAM I/ ring when the TAP controller is in the Capture-DR state
and is then placed between the TDI and TDO balls when the
controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the IO ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in “Identification Register Definitions” on page 15.
TAP Instruction Set
Overview
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in “Identification
Codes” on page 16. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the IO
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the IO
ring when these instructions are executed.
Instructions are loaded into the TAP controller during the
Shift-IR state, when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
Document #: 38-05284 Rev. *H
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller must be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction, which is to be
executed whenever the instruction register is loaded with all
zeros. EXTEST is not implemented in this SRAM TAP
controller, and therefore this device is not compliant to 1149.1.
The TAP controller does recognize an all-zero instruction.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction is loaded. There is one difference between the two
instructions. Unlike the SAMPLE/PRELOAD instruction,
EXTEST places the SRAM outputs in a High-Z state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and
enables the IDCODE to be shifted out of the device when the
TAP controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
at power up or whenever the TAP controller is in a test logic
reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
Be aware that the TAP controller clock can only operate at a
frequency up to 10 MHz, while the SRAM clock operates more
than an order of magnitude faster. Because there is a large
difference in the clock frequencies, it is possible that during the
Capture-DR state, an input or output may undergo a transition.
The TAP may then try to capture a signal while in transition
(metastable state). This does not harm the device, but there is
no guarantee as to the value that may be captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus
hold time (tCS plus tCH).
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Page 13 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that because the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
TAP Timing
1
2
Test Clock
(TCK )
3
t TH
t TM SS
t TM SH
t TDIS
t TDIH
t
TL
4
5
6
t CY C
Test M ode Select
(TM S)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CA RE
UNDEFINED
TAP AC Switching Characteristics
Over the Operating Range[10,11]
Parameter
Description
Min
Max
Unit
20
MHz
Clock
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH time
20
ns
tTL
TCK Clock LOW time
20
ns
50
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
5
ns
tTDIS
TDI Set-up to TCK Clock Rise
5
ns
tCS
Capture Set-up to TCK Rise
5
Hold Times
tTMSH
TMS hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Notes
10. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 n.s.
Document #: 38-05284 Rev. *H
Page 14 of 30
[+] Feedback
CY7C1481V33
CY7C1483V33
CY7C1487V33
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ................................................ VSS to 3.3V
Input pulse levels................................................. VSS to 2.5V
Input rise and fall times ................................................... 1 ns
Input rise and fall time .....................................................1 ns
Input timing reference levels ...........................................1.5V
Input timing reference levels......................................... 1.25V
Output reference levels...................................................1.5V
Output reference levels ................................................ 1.25V
Test load termination supply voltage...............................1.5V
Test load termination supply voltage ............................ 1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.25V
1.5V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions
(0°C < TA < +70°C; VDD = 3.135V to 3.6V unless otherwise noted)[12]
Parameter
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Description
Output HIGH Voltage
Output HIGH Voltage
Conditions
Output LOW Voltage
Unit
IOH = –4.0 mA
VDDQ = 3.3V
2.4
V
VDDQ = 2.5V
2.0
V
VDDQ = 3.3V
2.9
V
VDDQ = 2.5V
2.1
V
IOL = 8.0 mA
VDDQ = 3.3V
0.4
V
IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VDDQ = 3.3V
0.2
V
VDDQ = 2.5V
0.2
V
IOL = 100 µA
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Max
IOH = –1.0 mA
IOH = –100 µA
Output LOW Voltage
Min
VDDQ = 3.3V
2.0
VDD + 0.3
V
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
GND < VIN < VDDQ
Identification Register Definitions
Bit# 24 is “1” in the ID Register definitions for both 2.5V and 3.3V versions of the device.
Instruction Field
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type(23:18)
Bus Width/Density (17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
CY7C1481V33
(2M x 36)
CY7C1483V33
(4M x18)
CY7C1487V33
(1M x72)
000
000
000
01011
01011
01011
000001
000001
000001
Description
Describes the version number
Reserved for internal use
Defines memory type and architecture
100100
010100
110100
00000110100
00000110100
00000110100
Enables unique identification of SRAM
vendor
Defines width and density
1
1
1
Indicates the presence of an ID register
Note
12. All voltages refer to VSS (GND).
Document #: 38-05284 Rev. *H
Page 15 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Scan Register Sizes
Register Name
Bit Size (X36)
Bit Size (X18)
Bit Size (X72)
3
3
3
Instruction
Bypass
1
1
1
ID
32
32
32
Boundary Scan Order -165FBGA
73
54
-
Boundary Scan Order -209 BGA
-
-
112
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures IO ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures IO ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Boundary Scan Exit Order (2M x 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
41
L10
61
B8
2
D1
22
P2
42
K11
62
A7
3
E1
23
R4
43
J11
63
B7
4
D2
24
P6
44
K10
64
B6
5
E2
25
R6
45
J10
65
A6
6
F1
26
N6
46
H11
66
B5
7
G1
27
P11
47
G11
67
A5
8
F2
28
R8
48
F11
68
A4
9
G2
29
P3
49
E11
69
B4
10
J1
30
P4
50
D10
70
B3
11
K1
31
P8
51
D11
71
A3
12
L1
32
P9
52
C11
72
A2
13
J2
33
P10
53
G10
73
B2
14
M1
34
R9
54
F10
15
N1
35
R10
55
E10
16
K2
36
R11
56
A10
17
L2
37
N11
57
B10
18
M2
38
M11
58
A9
19
R1
39
L11
59
B9
20
R2
40
M10
60
A8
Document #: 38-05284 Rev. *H
Page 16 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Boundary Scan Exit Order (4M x 18)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
D2
19
R8
37
C11
2
E2
20
P3
38
A11
3
F2
21
P4
39
A10
4
G2
22
P8
40
B10
5
J1
23
P9
41
A9
6
K1
24
P10
42
B9
7
L1
25
R9
43
A8
8
M1
26
R10
44
B8
9
N1
27
R11
45
A7
10
R1
28
M10
46
B7
11
R2
29
L10
47
B6
12
R3
30
K10
48
A6
13
P2
31
J10
49
B5
14
R4
32
H11
50
A4
15
P6
33
G11
51
B3
16
R6
34
F11
52
A3
17
N6
35
E11
53
A2
18
P11
36
D11
54
B2
Document #: 38-05284 Rev. *H
Page 17 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Boundary Scan Exit Order (1M x 72)
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
Bit #
209-Ball ID
1
A1
29
T1
57
V10
85
C11
2
A2
30
T2
58
U11
86
C10
3
B1
31
U1
59
U10
87
B11
4
B2
32
U2
60
T11
88
B10
5
C1
33
V1
61
T10
89
A11
6
C2
34
V2
62
R11
90
A10
7
D1
35
W1
63
R10
91
A9
8
D2
36
W2
64
P11
92
U8
9
E1
37
T6
65
P10
93
A7
10
E2
38
V3
66
N11
94
A5
11
F1
39
V4
67
N10
95
A6
12
F2
40
U4
68
M11
96
D6
13
G1
41
W5
69
M10
97
B6
14
G2
42
V6
70
L11
98
D7
15
H1
43
W6
71
L10
99
K3
16
H2
44
U3
72
P6
100
A8
17
J1
45
U9
73
J11
101
B4
18
J2
46
V5
74
J10
102
B3
19
L1
47
U5
75
H11
103
C3
20
L2
48
U6
76
H10
104
C4
21
M1
49
W7
77
G11
105
C8
22
M2
50
V7
78
G10
106
C9
23
N1
51
U7
79
F11
107
B9
24
N2
52
V8
80
F10
108
B8
25
P1
53
V9
81
E10
109
A4
26
P2
54
W11
82
E11
110
C6
27
R2
55
W10
83
D11
111
B7
28
R1
56
V11
84
D10
112
A3
Document #: 38-05284 Rev. *H
Page 18 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Maximum Ratings
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.3V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.3V to +VDD
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to VDDQ + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch Up Current .................................................... >200 mA
Operating Range
Ambient
VDD
VDDQ
Temperature
Commercial 0°C to +70°C 3.3V –5%/+10% 2.5V – 5%
to VDD
Industrial
–40°C to +85°C
Range
Electrical Characteristics
Over the Operating Range[13, 14]
Parameter
Description
VDD
Power Supply Voltage
VDDQ
IO Supply Voltage
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage[13]
VIL
Input LOW Voltage[13]
Test Conditions
Min
Max
Unit
3.135
3.6
V
For 3.3V I/O
3.135
VDD
V
For 2.5V I/O
2.375
2.625
V
For 3.3V I/O, IOH = –4.0 mA
2.4
V
For 2.5V I/O, IOH = –1.0 mA
2.0
V
For 3.3V I/O, IOL = 8.0 mA
For 2.5V I/O, IOL = 1.0 mA
IX
Input Leakage Current
Except ZZ and MODE
V
0.4
V
2.0
VDD + 0.3V
V
For 2.5V I/O
1.7
VDD + 0.3V
V
For 3.3V I/O
–0.3
0.8
V
For 2.5V I/O
–0.3
0.7
V
–5
5
µA
For 3.3V I/O
GND ≤ VI ≤ VDDQ
Input Current of MODE Input = VSS
µA
–30
Input = VDD
Input Current of ZZ
0.4
5
µA
–5
Input = VSS
Input = VDD
µA
30
µA
5
µA
IOZ
Output Leakage Current GND ≤ VI ≤ VDD, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max, IOUT = 0 mA,
f = fMAX = 1/tCYC
7.5-ns cycle, 133 MHz
335
mA
10-ns cycle, 100 MHz
305
mA
Automatic CE
Power Down
Current—TTL Inputs
Max VDD, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
inputs switching
7.5-ns cycle, 133 MHz
200
mA
10-ns cycle, 100 MHz
200
mA
ISB1
–5
ISB2
Automatic CE
Max VDD, Device Deselected, All speeds
Power Down
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
Current—CMOS Inputs f = 0, inputs static
150
mA
ISB3
Max VDD, Device Deselected, 7.5-ns cycle, 133 MHz
Automatic CE
Power Down
VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V, 10-ns cycle, 100 MHz
Current—CMOS Inputs f = fMAX, inputs switching
200
mA
200
mA
165
mA
ISB4
Automatic CE
Power Down
Current—TTL Inputs
Max VDD, Device Deselected, All Speeds
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
Notes
13. Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2). Undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).
14. TPower-up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05284 Rev. *H
Page 19 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
CADDRESS
Address Input Capacitance
CDATA
Data Input Capacitance
Test Conditions
100 TQFP
Max
165 FBGA
Max
209 FBGA
Max
TA = 25°C, f = 1 MHz,
VDD = 3.3V
VDDQ = 2.5V
6
6
6
pF
5
5
5
pF
Unit
CCTRL
Control Input Capacitance
8
8
8
pF
CCLK
Clock Input Capacitance
6
6
6
pF
CI/O
Input/Output Capacitance
5
5
5
pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
100 TQFP
Package
165 FBGA
Package
209 FBGA
Package
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
24.63
16.3
15.2
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
2.28
2.1
1.7
°C/W
AC Test Loads and Waveforms
3.3V IO Test Load
R = 317Ω
3.3V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 351Ω
VL = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
ALL INPUT PULSES
VDDQ
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
(c)
(b)
2.5V IO Test Load
R = 1667Ω
2.5V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 1538Ω
VL = 1.25V
(a)
Document #: 38-05284 Rev. *H
ALL INPUT PULSES
VDDQ
INCLUDING
JIG AND
SCOPE
(b)
10%
90%
10%
90%
≤ 1 ns
≤ 1 ns
(c)
Page 20 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Switching Characteristics
Over the Operating Range.[15, 16]
Parameter
tPOWER
Description
VDD(Typical) to the First Access[17]
133 MHz
Min
Max
100 MHz
Min
Max
Unit
1
1
ms
Clock
tCYC
Clock Cycle Time
7.5
10
ns
tCH
Clock HIGH
2.5
3.0
ns
tCL
Clock LOW
2.5
3.0
ns
Output Times
tCDV
Data Output Valid After CLK Rise
6.5
tDOH
Data Output Hold After CLK Rise
2.5
Low-Z[18, 19, 20]
3.0
8.5
2.5
ns
ns
tCLZ
Clock to
tCHZ
Clock to High-Z[18, 19, 20]
3.8
4.5
ns
tOEV
OE LOW to Output Valid
3.0
3.8
ns
tOELZ
tOEHZ
OE LOW to Output
Low-Z[18, 19, 20]
OE HIGH to Output
High-Z[18, 19, 20]
3.0
0
ns
0
3.0
ns
4.0
ns
Setup Times
tAS
Address Setup Before CLK Rise
1.5
1.5
ns
tADS
ADSP, ADSC Setup Before CLK Rise
1.5
1.5
ns
tADVS
ADV Setup Before CLK Rise
1.5
1.5
ns
tWES
GW, BWE, BWX Setup Before CLK Rise
1.5
1.5
ns
tDS
Data Input Setup Before CLK Rise
1.5
1.5
ns
tCES
Chip Enable Setup
1.5
1.5
ns
tAH
Address Hold After CLK Rise
0.5
0.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.5
0.5
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.5
0.5
ns
tADVH
ADV Hold After CLK Rise
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
0.5
ns
Hold Times
Notes
15. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
16. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 20 unless otherwise noted.
17. This part has an internal voltage regulator; tPOWER is the time that the power must be supplied above VDD(minimum) initially, before a read or write operation can
be initiated.
18. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of “AC Test Loads and Waveforms” on page 20. Transition is measured ±200 mV
from steady-state voltage.
19. At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z before Low-Z under the same system conditions.
20. This parameter is sampled and not 100% tested.
Document #: 38-05284 Rev. *H
Page 21 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Timing Diagrams
Figure 1. Read Cycle Timing[21]
tCYC
CLK
t
t ADS
t CL
CH
tADH
ADSP
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
t
WES
t
WEH
GW, BWE, BWX
t CES
Deselect Cycle
t CEH
CE
t
ADVS
t
ADVH
ADV
ADV suspends burst
OE
t OEV
t OEHZ
t CLZ
Data Out (Q)
High-Z
Q(A1)
t CDV
t OELZ
t CHZ
t DOH
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
t CDV
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Burst wraps around
to its initial state
Single READ
BURST
READ
DON’T CARE
UNDEFINED
Note
21. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH.
Document #: 38-05284 Rev. *H
Page 22 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Timing Diagrams (continued)
Figure 2. Write Cycle Timing[21, 22]
t CYC
CLK
t
t ADS
CH
t
CL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE, BW X
t
WES
t
WEH
GW
t CES
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data in (D)
High-Z
t
DS
t
DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
OEHZ
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note
22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW, and BWX LOW.
Document #: 38-05284 Rev. *H
Page 23 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Timing Diagrams (continued)
Figure 3. Read/Write Cycle Timing[21, 23, 24]
tCYC
CLK
t
t ADS
CH
t
CL
tADH
ADSP
ADSC
t AS
ADDRESS
A1
tAH
A2
A3
A4
t
WES
t
A5
A6
WEH
BWE, BW X
t CES
tCEH
CE
ADV
OE
t DS
Data In (D)
Data Out (Q)
High-Z
t
OEHZ
Q(A1)
tDH
t OELZ
D(A3)
D(A5)
Q(A4)
Q(A2)
Back-to-Back READs
D(A6)
t CDV
Single WRITE
Q(A4+1)
Q(A4+2)
BURST READ
DON’T CARE
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes
23. The data bus (Q) remains in High-Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.
24. GW is HIGH.
Document #: 38-05284 Rev. *H
Page 24 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Timing Diagrams (continued)
Figure 4. ZZ Mode Timing[25, 26]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
25. Device must be deselected when entering ZZ mode. See “Truth Table” on page 10 for all possible signal conditions to deselect the device.
26. DQs are in High-Z when exiting ZZ sleep mode.
Document #: 38-05284 Rev. *H
Page 25 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Ordering Information
Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative
or visit www.cypress.com for actual products offered.
Speed
(MHz)
133
Ordering Code
CY7C1481V33-133AXC
Package
Diagram
Operating
Range
Part and Package Type
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-free
Commercial
CY7C1483V33-133AXC
CY7C1481V33-133BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1483V33-133BZC
CY7C1481V33-133BZXC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-free
CY7C1483V33-133BZXC
CY7C1487V33-133BGC
CY7C1487V33-133BGXC
CY7C1481V33-133AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-free
lndustrial
CY7C1483V33-133AXI
CY7C1481V33-133BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1483V33-133BZI
CY7C1481V33-133BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-free
CY7C1483V33-133BZXI
CY7C1487V33-133BGI
CY7C1487V33-133BGXI
100
CY7C1481V33-100AXC
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-free
Commercial
CY7C1483V33-100AXC
CY7C1481V33-100BZC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1483V33-100BZC
CY7C1481V33-100BZXC
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-free
CY7C1483V33-100BZXC
CY7C1487V33-100BGC
CY7C1487V33-100BGXC
CY7C1481V33-100AXI
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-free
51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Pb-free
lndustrial
CY7C1483V33-100AXI
CY7C1481V33-100BZI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1483V33-100BZI
CY7C1481V33-100BZXI
51-85165 165-ball Fine-Pitch Ball Grid Array (15 x 17 x 1.4 mm) Pb-free
CY7C1483V33-100BZXI
CY7C1487V33-100BGI
CY7C1487V33-100BGXI
Document #: 38-05284 Rev. *H
51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm)
209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) Pb-free
Page 26 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Package Diagrams
Figure 5. 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm), 51-85050
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
12°±1°
(8X)
SEE DETAIL
A
51
31
50
0.20 MAX.
R 0.08 MIN.
0.20 MAX.
0.10
1.60 MAX.
0° MIN.
SEATING PLANE
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
NOTE:
1. JEDEC STD REF MS-026
GAUGE PLANE
0°-7°
R 0.08 MIN.
0.20 MAX.
2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH
MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE
BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH
3. DIMENSIONS IN MILLIMETERS
0.60±0.15
0.20 MIN.
1.00 REF.
DETAIL
Document #: 38-05284 Rev. *H
A
51-85050-*B
Page 27 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Package Diagrams (continued)
Figure 6. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
Ø0.05 M C
PIN 1 CORNER
Ø0.25 M C A B
Ø0.45±0.05(165X)
1
2
3
4
5
6
7
8
9
10
11
11
10
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
F
F
G
G
H
J
14.00
E
17.00±0.10
E
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
1.00
5.00
0.35
0.15 C
+0.05
-0.10
0.53±0.05
0.25 C
10.00
B
15.00±0.10
0.15(4X)
SEATING PLANE
Document #: 38-05284 Rev. *H
1.40 MAX.
0.36
C
51-85165-*A
Page 28 of 30
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Package Diagrams (continued)
Figure 7. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167
51-85167-**
i486 is a trademark and Intel and Pentium are registered trademarks of Intel Corporation. All products and company names
mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05284 Rev. *H
Page 29 of 30
© Cypress Semiconductor Corporation, 2002-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the
use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to
be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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CY7C1481V33
CY7C1483V33
CY7C1487V33
Document History Page
Document Title: CY7C1481V33/CY7C1483V33/CY7C1487V33, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
Document Number: 38-05284
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
114671
08/12/02
PKS
New Data Sheet
*A
118283
01/27/03
HGK
Updated Ordering Information
Updated the features for package offering
Changed from Advance Information to Preliminary
*B
233368
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 150-MHz speed grade offering
Changed package outline for 165FBGA package and 209-ball BGA
package
Removed 119-BGA package offering
*C
299452
See ECN
SYT
Removed 117-MHz Speed Bin
Changed ΘJA from 16.8 to 24.63 °C/W and ΘJC from 3.3 to 2.28 °C/W for
100 TQFP Package on Page # 21
Added lead-free information for 100-Pin TQFP, 165 FBGA and 209 BGA
Packages
Added comment of ‘Lead-free BG packages availability’ below the
Ordering Information
*D
323080
See ECN
PCI
Address expansion pins/balls in the pinouts for all packages are modified
as per JEDEC standard
Added Address Expansion pins in the Pin Definitions Table
Modified VOL, VOH test conditions
Removed comment of ‘Lead-free BG packages availability’ below the
Ordering Information
Updated Ordering Information Table
*E
416193
See ECN
NXR
Changed address of Cypress Semiconductor Corporation on Page# 1
from “3901 North First Street” to “198 Champion Court”
Changed the description of IX from Input Load Current to Input Leakage
Current on page# 19
Changed the IX current values of MODE on page # 19 from -5 µA and 30
µA
to -30 µA and 5 µA
Changed the IX current values of ZZ on page # 19 from -30 µA and 5 µA
to -5 µA and 30 µA
Changed VIH < VDD to VIH < VDD on page # 19
Replaced Package Name column with Package Diagram in the Ordering
Information table
*F
470723
See ECN
VKN
Converted from Preliminary to Final
Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND
Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP
AC Switching Characteristics table
Updated the Ordering Information table
*G
486690
See ECN
VKN
Corrected the typo in the 209-Ball FBGA pinout.
(Corrected the ball name H9 to VSS from VSSQ).
*H
1062041
See ECN
Document #: 38-05284 Rev. *H
VKN/KKVTMP Added footnote #2 related to VSSQ
Page 30 of 30
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