MOTOROLA BC338 Amplifier transistor Datasheet

Order this document
by BC337/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
BC337
BC338
Unit
Collector – Emitter Voltage
VCEO
45
25
Vdc
Collector – Base Voltage
VCBO
50
30
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
45
25
—
—
—
—
50
30
—
—
—
—
5.0
—
—
—
—
—
—
100
100
—
—
—
—
100
100
—
—
100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100 µA, IE = 0)
V(BR)CEO
BC337
BC338
Vdc
V(BR)CES
BC337
BC338
Emitter – Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC337
BC338
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC337
BC338
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
IEBO
Vdc
nAdc
nAdc
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
100
100
160
250
60
—
—
—
—
—
630
250
400
630
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
—
BC337/BC338
BC337–16/BC338–16
BC337–25/BC338–25
BC337–40/BC338–40
(IC = 300 mA, VCE = 1.0 V)
Base–Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
—
—
1.2
Vdc
Collector – Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
—
—
0.7
Vdc
Cob
—
15
—
pF
fT
—
210
—
MHz
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
SINGLE PULSE
0.01
0.03
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.02
0.01
0.001
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
2.0
5.0
10
20
50
100
Figure 1. Thermal Response
1.0 s
1.0 ms
1000
TJ = 135°C
100 µs
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
1000
dc
TC = 25°C
dc
TA = 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
VCE, COLLECTOR–EMITTER VOLTAGE
100
Figure 2. Active Region — Safe Operating Area
2
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMP)
1000
Figure 3. DC Current Gain
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
0.8
0.8
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0
0.1
1
IB, BASE CURRENT (mA)
10
100
1
Figure 4. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 5. “On” Voltages
100
+1
θVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
–1
θVB for VBE
–2
1
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 6. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Cib
10
Cob
1
0.1
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Capacitances
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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4
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC337/D
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