STMicroelectronics AM80912-015 Avionics applications rf & microwave transistor Datasheet

AM80912-015
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞ :1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
POUT = 15 W MIN. WITH 8.1 dB GAIN
BANDWIDTH 255 MHz
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM80912-015
BRANDING
80912-15
PIN CONNECTION
DESCRIPTION
The AM80912-015 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-015 is housed in the unique
IMPAC Hermetic Metal/Ceramic package with
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Value
Unit
Power Dissipation*(TC ≤ 100°C)
Parameter
50
W
Device Current*
1.8
A
Collector-Supply Voltage*
32
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
3.0
°C/W
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
March 1994
1/6
AM80912-015
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Valu e
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10mA
IE = 0mA
55
—
—
V
BVEBO
IE = 1mA
IC = 0mA
3.5
—
—
V
BVCER
IC = 10mA
RBE = 10Ω
55
—
—
V
ICES
VBE = 0V
VCE = 28V
—
—
2.0
mA
hFE
VCE = 5V
IC = 500mA
15
—
150
—
DYNAMIC
Value
Symbol
Min.
Typ.
Max.
Unit
POUT
ηc
f = 960 — 1215MHz
PIN = 2.3W
VCC = 28V
15
17
—
W
f = 960 — 1215MHz
PIN = 2.3W
VCC = 28V
45
49
—
%
GP
f = 960 — 1215MHz
PIN = 2.3W
VCC = 28V
8.1
8.9
—
dB
Note:
2/6
Test Conditions
Pulse format: 6.4 µ S on 6.6 µ S off, repeat for 3.3 ms, t hen off for 4.5125 ms.
Duty Cycle: Burst 49. 2%, overal l 20.8%
AM80912-015
TYPICAL PERFORMANCE
TYPICAL BROADBAND
POWER AMPLIFIER
RELATIVE POWER OUTPUT &
COLLECTOR EFFICIENCY vs
COLLECTOR VOLTAGE
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
3/6
AM80912-015
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 2.3 W
VCC = 28 V
Z O* = 50 ohms
FREQ.
ZIN (Ω)
L = 960 MHz
5.7 + j 4.3
ZCL (Ω)
5.7 + j 7.7
M = 1090 MHz
5.8 + j 2.5
4.3 + j 6.5
H = 1215 MHz
5.0 + j 3.0
4.0 + j 4.8
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 2.3 W
VCC = 28 V
ZO* = 50 ohms
*Normalized Impedance
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AM80912-015
TEST CIRCUIT
Ref.: Dwg. No. 104-000284
5/6
AM80912-015
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-221
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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