Order this document by MPS4123/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPS4123 MPS4124 Unit Collector – Emitter Voltage VCE 30 25 Vdc Collector – Base Voltage VCB 40 30 Vdc Emitter – Base Voltage VEB 5.0 Vdc Collector Current — Continuous IC 200 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) MPS4123 MPS4124 V(BR)CEO 30 25 — — Vdc Collector – Base Breakdown Voltage (IC = 10 mA, IE = 0) MPS4123 MPS4124 V(BR)CBO 40 30 — — Vdc V(BR)EBO 5.0 — Vdc Collector Cutoff Current (VCB = 20 V, IE = 0) ICBO — 50 nAdc Emitter Cutoff Current (VEB = 3.0 V, IC = 0) IEBO — 50 nAdc Emitter – Base Breakdown Voltage (IC = 0, IE = 10 mA) REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 50 120 25 60 150 360 — — Unit ON CHARACTERISTICS DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) hFE MPS4123 MPS4124 MPS4123 MPS4124 — Collector – Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) VCE(sat) — 0.3 Vdc Base – Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) VBE(sat) — 0.95 Vdc fT 100 170 — — MHz Cob — 4.0 pF SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) MPS4123 MPS4124 Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) MPS4123 MPS4124 Cib — — 14 13.5 pF Small–Signal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) MPS4123 MPS4124 hfe 50 120 200 480 — — — 6.0 5.0 Noise Figure (IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) 2 NF MPS4123 MPS4124 dB Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 3 Motorola reserves the right to make changes without further notice to any products herein. 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