Order this document by MPS6521/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage NPN PNP 25 — — 25 40 — — 25 Unit VCEO MPS6521 MPS6523 Collector – Base Voltage Vdc VCBO MPS6521 MPS6523 Emitter – Base Voltage Vdc 2 VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range 1 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector – Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) V(BR)CEO 25 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — Vdc — — 0.05 0.05 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) mAdc ICBO MPS6521 MPS6523 Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MPS6520/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) MPS6521 hFE 150 — (IC = 2.0 mAdc, VCE = 10 Vdc) MPS6521 300 600 (IC = 100 mAdc, VCE = 10 Vdc) MPS6523 150 — (IC = 2.0 mAdc, VCE = 10 Vdc) MPS6523 300 600 VCE(sat) — 0.5 Vdc Cobo — 3.5 pF NF — 3.0 dB Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) — SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω, Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V + 3.0 V 10 < t1 < 500 µs DUTY CYCLE = 2% t1 +10.9 V 10 k 275 10 k 0 – 0.5 V <1.0 ns CS < 4.0 pF* – 9.1 V < 1.0 ns CS < 4.0 pF* 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn–On Time Figure 2. Turn–Off Time TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 µA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 µA 7.0 5.0 10 µA 3.0 20 300 µA 100 µA 10 5.0 2.0 1.0 30 µA 0.5 30 µA 10 µA 0.2 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k Figure 3. Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k Figure 4. Noise Current 3 NPN MPS6521 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500 k 200 k 100 k 50 k 20 k 10 k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ǒ Noise Figure is defined as: 20 k 10 k 5k NF 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 en2 Ǔ ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 2.0 dB 200 100 50 + 20 log10 1k IC, COLLECTOR CURRENT (µA) Figure 7. Wideband 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6521 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 – 55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 40 100 µA 20 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 10. Collector Characteristics 1.4 0.1 400 µA 60 Figure 9. Collector Saturation Region 0.8 IB = 500 µA 50 100 Figure 11. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 25°C to 125°C 0 *qVC for VCE(sat) – 55°C to 25°C – 0.8 25°C to 125°C – 1.6 qVB for VBE – 2.4 0.1 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 12. Temperature Coefficients 5 NPN MPS6521 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 50 70 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 10 1.0 100 2.0 3.0 500 TJ = 25°C f = 1.0 MHz 7.0 300 VCE = 20 V 200 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current–Gain — Bandwidth Product Figure 16. Capacitance 10 hfe ≈ 200 @ IC = 1.0 mA 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k Ω ) 70 100 10 TJ = 25°C f = 100 MHz 20 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 17. Input Impedance 6 50 Figure 14. Turn–Off Time C, CAPACITANCE (pF) f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn–On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 100 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 18. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) NPN MPS6521 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19A 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 19. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 103 102 ICEO 101 ICBO AND ICEX @ VBE(off) = 3.0 Vdc 100 10–1 10–2 –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. Figure 19A. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25°C dc 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 10 µs 1.0 s dc TJ = 150°C 4.0 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TA = 25°C 20 6.0 100 µs 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 20. Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 PNP MPS6523 TYPICAL NOISE CHARACTERISTICS (VCE = – 5.0 Vdc, TA = 25°C) ā 10 7.0 IC = 10 µA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 µA 3.0 100 µA 300 µA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 µA 1.0 0.7 0.5 100 µA 30 µA 0.3 0.2 1.0 10 µA 0.1 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 10 k 20 50 Figure 21. Noise Voltage 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k Figure 22. Noise Current NOISE FIGURE CONTOURS (VCE = – 5.0 Vdc, TA = 25°C) 1.0 M 500 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) ā 200 k 100 k 50 k 20 k 10 k 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 2.0 dB 3.0 dB 200 100 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 20 k 10 k RS , SOURCE RESISTANCE (OHMS) 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 500 700 1.0 k 2.0 dB 3.0 dB 5.0 dB 10 Figure 23. Narrow Band, 100 Hz 1.0 M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 200 100 5.0 dB 10 1.0 M 500 k 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0 k Figure 24. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ƪ Noise Figure is Defined as: NF 20 k 10 k 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 en2 ƫ ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 0.5 dB 5.0 k 2.0 k 1.0 k 500 + 20 log10 500 700 1.0 k IC, COLLECTOR CURRENT (µA) Figure 25. Wideband 8 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP MPS6523 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 – 55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 26. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 150 µA 40 100 µA 50 µA 20 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 40 Figure 28. Collector Characteristics 1.4 0.2 250 µA 60 Figure 27. Collector Saturation Region 0.1 IB = 400 µA 350 µA 100 Figure 29. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 25°C to 125°C 0 – 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 qVB for VBE 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 30. Temperature Coefficients 9 PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 ts 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 3.0 50 70 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 10 –1.0 100 ā ā 500 ā ā ā ā ā 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) ā Figure 32. Turn–Off Time 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 33. Current–Gain — Bandwidth Product Figure 34. Capacitance 20 3.0 2.0 VCE = –10 Vdc f = 1.0 kHz TA = 25°C hoe, OUTPUT ADMITTANCE (m mhos) MPS6521 hfe ≈ 200 @ IC = –1.0 mA 7.0 5.0 MPS6523 hfe ≈ 100 @ IC = –1.0 mA 1.0 0.7 0.5 0.3 0.2 0.1 10 20 50 200 10 hie , INPUT IMPEDANCE (k Ω ) – 50 – 70 –100 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA) Figure 31. Turn–On Time 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS6521 hfe ≈ 200 @ IC = 1.0 mA 10 7.0 5.0 MPS6523 hfe ≈ 100 @ IC = 1.0 mA 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 35. Input Impedance 10 VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ā 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 50 100 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 36. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP MPS6523 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL DYNAMIC CHARACTERISTICS 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 37. Thermal Response IC, COLLECTOR CURRENT (mA) 400 100 µs 100 TC = 25°C dc 60 1.0 s TA = 25°C 40 dc 20 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 10 µs 1.0 ms 200 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 40 Figure 38. Active–Region Safe Operating Area 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10–1 10–2 –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: The MPS6523 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. Figure 39. Typical Collector Leakage Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 11 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. 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