IRF IRF7811W Power mosfet for dc-dc converter Datasheet

PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7811W
RDS(on)
9.0mΩ
QG
18nC
Qsw
5.5nC
Qoss
12nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 90°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
Symbol
IRF7811W
VDS
30
VGS
±12
ID
14
IDM
109
13
PD
TL = 90°C
3.1
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source Current
ISM
109
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
3/13/01
IRF7811W
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Min
Typ
Max
Units
30
–
–
V
9.0
12
mΩ
VGS = 4.5V, ID = 15A‚
V
VDS = VGS,I D = 250µA
1.0
30
Current*
150
Conditions
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
nA
Total Gate Chg Cont FET
QG
18
Total Gate Chg Sync FET
QG
15.6
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
6.0
VDS = 16V, ID = 15A
Post-Vth
Gate-Source Charge
QGS2
1.4
Gate to Drain Charge
QGD
4.1
Switch Chg(Qgs2 + Qgd)
Qsw
5.5
24
VGS=5.0V, ID=15A, VDS=16V
nC
Output Charge
Qoss
12
Gate Resistance
RG
2.0
Turn-on Delay Time
td (on)
11
Rise Time
tr
11
Turn-off Delay Time
td
29
Fall Time
tf
Input Capacitance
Ciss
–
2335
–
Output Capacitance
Coss
–
400
–
Reverse Transfer Capacitance Crss
–
119
–
Typ
Max
Units
1.25
V
(off)
VGS = ±12V
VDS = 16V, VGS = 0
Ω
VDD = 16V, I D = 15A
ns
VGS = 5.0V
Clamped Inductive Load
9.9
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
45
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
41
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
www.irf.com
IRF7811W
6.0
ID = 15A
VGS, Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
ID = 15A
VDS = 16V
4.0
2.0
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
8
12
16
20
QG, Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.020
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3000
C, Capacitance(pF)
R DS(on) , Drain-to -Source On Resistance ( Ω )
4
0.015
ID = 15A
0.010
Ciss
2000
1000
Coss
Crss
0.005
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
www.irf.com
7.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7811W
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15V
20µs PULSE WIDTH
0.1
2.5
3.0
3.5
4.0
4.5
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
5.0
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
P DM
1
0.02
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF7811W
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
www.irf.com
5
IRF7811W
SO-8 Tape and Reel
T E R M INA L NU M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IRE C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0 .0 0
(1 2 .9 92 )
M AX .
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
N O TES :
1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R.
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
6
www.irf.com
Similar pages