Seme LAB BUL50A Advanced distributed base design high voltage high speed npn silicon power transistor Datasheet

SEME
BUL50A
LAB
MECHANICAL DATA
Dimensions in mm (inches)
(0.185)
(0.209)
(0.059)
(0.098)
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
4.69
5.31
1.49
2.49
4.50
(0.177)
M ax.
3.55 (0.140)
3.81 (0.150)
2
1
3
1.65 (0.065)
2.13 (0.084)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
0.79 (0.031)
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
5.25 (0.215)
BSC
TO–247
Pin 1 – Base
Pad 2 – Collector
15.2
max
Pad 3 – Emitter
4.6
max
14
FEATURES
21.0
max
4.25
Dia.
4.15
12.7
max
2
3
1.15
0.95
0.4
• Triple Guard Rings for improved control of
high voltages.
1.6
11
SOT93
Pin 1 – Base
Pad 2 – Collector
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
13.6
min
5.5
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
MILITARY AND HI–REL VERSIONS
AVAILABLE IN METAL AND CERAMIC
SURFACE MOUNT PACKAGES
2.0
4.4
1
•
•
•
•
•
•
Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
1000V
VCEO
Collector – Emitter Voltage (IB = 0)
500V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC
Continuous Collector Current
15A
IC(PK)
Peak Collector Current
30A
IB
Base Current
5A
Ptot
Total Dissipation at Tcase = 25°C
Tstg
Operating and Storage Temperature Range
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
125W
–55 to +175°C
Prelim. 3/95
SEME
BUL50A
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 100mA
500
V(BR)CBO
Collector – Base Breakdown Voltage
IC = 1mA
1000
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 1mA
10
ICBO
Collector – Base Cut–Off Current
ICEO
Collector – Emitter Cut–Off Current
IEBO
Emitter Cut–Off Current
hFE*
DC Current Gain
IB = 0
Max.
10
TC = 125°C
100
VCE = 500V
100
VEB = 5V
10
IC = 0
TC = 125°C
IC = 0.5A
VCE = 4V
15
50
IC = 5A
VCE = 4V
10
20
IC = 10A
VCE = 4V
5
12
TC = 125°C
4
10
100
mA
mA
mA
—
IB = 0.1A
0.05
0.1
IB = 1A
0.2
0.4
IC = 10A
IB = 2A
0.3
1.2
IC = 5A
IB = 1A
0.9
1.1
IC = 10A
IB = 2A
1.0
1.3
1.0
Collector – Emitter Saturation Voltage IC = 5A
Unit
V
VCB = 1000V
IC = 0.5A
VCE(sat)*
Typ.
V
VBE(sat)*
Base – Emitter Saturation Voltage
VBE(on)
Base – Emitter On Voltage
IC = 3A
VCE = 4V
0.8
ft
DYNAMIC CHARACTERISTICS
Transition Frequency
IC = 0.2A
VCE = 4V
20
MHz
Cob
Output Capacitance
VCB = 20V
f = 1MHz
45
pF
V
V
* Pulse test tp = 300ms , d < 2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 3/95
Similar pages