ALSC AS7C31025B-10JIN 3.3v 128k x 8 cmos sram (center power and ground) Datasheet

March 2004
AS7C31025B
®
3.3V 128K X 8 CMOS SRAM (Center power and ground)
Features
• Industrial and commercial temperatures
• Organization: 131,072 x 8 bits
• High speed
- 10/12/15/20 ns address access time
- 5, 6, 7, 8 ns output enable access time
• Low power consumption: ACTIVE
- 252 mW / max @ 10 ns
• Low power consumption: STANDBY
- 18 mW / max CMOS
• 6 T 0.18 u CMOS technology
•
•
•
•
Easy memory expansion with CE, OE inputs
Center power and ground
TTL/LVTTL-compatible, three-state I/O
JEDEC-standard packages
- 32-pin, 300 mil SOJ
- 32-pin, 400 mil SOJ
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
Pin arrangement
Logic block diagram
VCC
512 x 256 x 8
Array
(1,048,576)
A0
A1
A2
A3
CE
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE
A4
A5
A6
A7
I/O7
Sense amp
A0
A1
A2
A3
A4
A5
A6
A7
A8
Row decoder
Input buffer
I/O0
Control
circuit
WE
OE
CE
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
A9
A10
A11
A12
A13
A14
A15
A16
Column decoder
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
AS7C31025B
32-pin SOJ (300 mil)
32-pin SOJ (400 mil)
GND
Selection guide
-10
-12
-15
-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access time
5
6
7
8
ns
Maximum operating current
70
65
60
55
mA
Maximum CMOS standby current
5
5
5
5
mA
3/24/04, v. 1.3
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AS7C31025B
®
Functional description
The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8
bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for
high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.
When CE is high the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data
on the input pins I/O0 through I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention,
external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins
with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output
drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The AS7C31025B is packaged in common
industry standard packages.
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Voltage on VCC relative to GND
Vt1
–0.50
+5.0
V
Voltage on any pin relative to GND
Vt2
–0.50
VCC + 0.5
V
Power dissipation
PD
–
1.0
Storage temperature (plastic)
Tstg
–65
W
+150
o
C
Ambient temperature with VCC applied
Tbias
–55
+125
oC
DC current into outputs (low)
IOUT
–
20
mA
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE
WE
OE
Data
Mode
H
X
X
High Z
Standby (ISB, ISB1)
L
H
H
High Z
Output disable (ICC)
L
H
L
DOUT
Read (ICC)
L
L
X
DIN
Write (ICC)
Key: X = don’t care, L = low, H = high.
3/24/04, v. 1.3
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Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VCC
3.0
3.3
3.6
V
VIH
2.0
–
VCC + 0.5
V
VIL
–0.5
–
0.8
Input voltage
TA
Ambient operating temperature
0
TA
–
–40
–
V
70
o
85
oC
C
VIL = -1.0V for pulse width less than 5ns
VIH = VCC + 1.5V for pulse width less than 5ns
DC operating characteristics (over the operating range)1
-10
Parameter
-12
-15
-20
Sym
Test conditions
Input leakage
current
| ILI |
VCC = Max, VIN = GND to VCC
–
1
–
1
–
1
–
1
µA
Output leakage
current
| ILO |
VCC = Max, CE = VIH,
Vout = GND to VCC
–
1
–
1
–
1
–
1
µA
–
70
–
65
–
60
–
55
mA
–
30
–
25
–
20
–
20
mA
Operating power
supply current
VCC = Max
ICC
ISB
Standby power
supply current1
Output voltage
Min Max Min Max Min Max Min Max Unit
CE ≤ VIL, f = fMax,
IOUT = 0 mA
VCC = Max
CE ≥ VIH, f = fMax
ISB1
VCC = Max, CE ≥ VCC–0.2 V,
VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V,
f=0
–
5
–
5
–
5
–
5
mA
VOL
IOL = 8 mA, VCC = Min
–
0.4
–
0.4
–
0.4
–
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
–
2.4
–
2.4
–
2.4
–
V
Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE, WE, OE
VIN = 0 V
5
pF
I/O capacitance
CI/O
I/O
VIN = VOUT = 0 V
7
pF
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Read cycle (over the operating range)3,9
-10
Parameter
-12
-15
-20
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
10
–
12
–
15
–
20
–
ns
Address access time
tAA
–
10
–
12
–
15
–
20
ns
3
Chip enable (CE) access time
tACE
–
10
–
12
–
15
–
20
ns
3
Output enable (OE) access time
tOE
–
5
–
6
–
7
–
8
ns
Output hold from address change
tOH
3
–
3
–
3
–
3
–
ns
5
CE low to output in low Z
tCLZ
3
–
3
–
3
–
3
–
ns
4, 5
CE high to output in high Z
tCHZ
–
3
–
3
–
4
–
5
ns
4, 5
OE low to output in low Z
tOLZ
0
–
0
–
0
–
0
–
ns
4, 5
OE high to output in high Z
tOHZ
–
5
–
6
–
7
–
8
ns
4, 5
Power up time
tPU
0
–
0
–
0
–
0
–
ns
4, 5
Power down time
tPD
–
10
–
12
–
15
–
20
ns
4, 5
Key to switching waveforms
Rising input
Falling input
Undefined/don’t care
Read waveform 1 (address controlled)3,6,7,9
tRC
Address
tAA
tOH
DOUT
Data valid
Read waveform 2 (CE and OE controlled)3,6,8,9
tRC1
CE
tOE
OE
DOUT
Supply
current
3/24/04, v. 1.3
tOHZ
tCHZ
tOLZ
tACE
tCLZ
tPU
Data valid
tPD
50%
Alliance Semiconductor
ICC
ISB
50%
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Write cycle (over the operating range)11
-10
Parameter
Symbol
-12
-15
-20
Min Max Min Max Min Max Min Max
Unit
Notes
Write cycle time
tWC
10
–
12
–
15
–
20
–
ns
Chip enable (CE) to write end
tCW
8
–
9
–
10
–
12
–
ns
Address setup to write end
tAW
8
–
9
–
10
–
12
–
ns
Address setup time
tAS
0
–
0
–
0
–
0
–
ns
Write pulse width
tWP
7
–
8
–
9
–
12
–
ns
Write recovery time
tWR
0
–
0
–
0
–
0
–
ns
Address hold from end of write
tAH
0
–
0
–
0
–
0
–
ns
Data valid to write end
tDW
5
–
6
–
8
–
10
–
ns
Data hold time
tDH
0
–
0
–
0
–
0
–
ns
4, 5
Write enable to output in high Z
tWZ
–
5
–
6
–
7
–
8
ns
4, 5
Output active from write end
tOW
1
–
1
–
1
–
1
–
ns
4, 5
Write waveform 1 (WE controlled)10,11
tWC
tAW
tWR
tAH
Address
tWP
WE
tAS
tDW
DIN
tDH
Data valid
tWZ
tOW
DOUT
Write waveform 2 (CE controlled)10,11
tAW
tWC
tAH
tWR
Address
tAS
tCW
CE
tWP
WE
tWZ
DIN
tDW
tDH
Data valid
DOUT
3/24/04, v. 1.3
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AC test conditions
–
–
–
–
Output load: see Figure B.
Input pulse level: GND to 3.0 V. See Figure A.
Input rise and fall times: 2 ns. See Figure A.
Input and output timing reference levels: 1.5 V.
Thevenin equivalent:
168 Ω
DOUT
+1.728 V
+3.0 V
DOUT
255 Ω
+3.3 V
320 Ω
GND
90%
10%
90%
2 ns
10%
Figure A: Input pulse
C13
GND
Figure B: 3.3 V Output load
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions, Figures A and B.
tCLZ and tCHZ are specified with CL = 5 pF, as in Figure B. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is high for read cycle.
CE and OE are low for read cycle.
Address is valid prior to or coincident with CE transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
N/A
All write cycle timings are referenced from the last valid address to the first transitioning address.
N/A.
C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
3/24/04, v. 1.3
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AS7C31025B
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Package dimensions
32-pin SOJ
300 mil/400 mil
D
e
E1 E2
B
Pin 1
A
A1
c
b
A2
Seating
plane
E
32-pin SOJ
300 mil
32-pin SOJ
400 mil
Symbol
Min
Max
Min
Max
A
0.128
0.145
0.132
0.146
A1
0.025
-
0.025
-
A2
0.095
0.105
0.105
0.115
B
0.026
0.032
0.026
0.032
b
0.016
0.020
0.015
0.020
c
0.007
0.010
0.007
0.013
D
0.820
0.830
0.820
0.830
E
0.255
0.275
0.354
0.378
E1
0.295
0.305
0.395
0.405
E2
0.330
0.340
0.435
0.445
e
3/24/04, v. 1.3
0.050 BSC
0.050 BSC
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Ordering Codes
Package \
Access time
Temperature
10 ns
12 ns
15 ns
20 ns
Commercial
AS7C31025B-10TJC
AS7C31025B-12TJC
AS7C31025B-15TJC
AS7C31025B-20TJC
Industrial
AS7C31025B-10TJI
AS7C31025B-12TJI
AS7C31025B-15TJI
AS7C31025B-20TJI
Commercial
AS7C31025B-10JC
AS7C31025B-12JC
AS7C31025B-15JC
AS7C31025B-20JC
Industrial
AS7C31025B-10JI
AS7C31025B-12JI
AS7C31025B-15JI
AS7C31025B-0JI
300-mil SOJ
400-mil SOJ
Note:
Add suffix ‘N’ to the above part number for lead free parts (Ex. AS7C31025B-10TJCN)
Part numbering system
AS7C
X
1025B
–XX
SRAM
prefix
Voltage:
3 = 3.3 V
CMOS
Device
number
Access
time
3/24/04, v. 1.3
X
X
Package:
Temperature range
TJ = SOJ 300 mil C = commercial, 0° C to 70° C
J = SOJ 400 mil I = industrial, -40° C to 85° C
Alliance Semiconductor
X
N=Lead Free Part
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AS7C31025B
®
®
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Copyright © Alliance Semiconductor
2575, Augustine Drive,
All Rights Reserved
Santa Clara, CA 95054
Part Number: AS7C31025B
Tel: 408 - 855 - 4900
Document Version: v. 1.3
Fax: 408 - 855 - 4999
www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.
The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this
data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The
information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate
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