MOTOROLA MR758

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by MR750/D
SEMICONDUCTOR TECHNICAL DATA
 • Current Capacity Comparable to Chassis Mounted Rectifiers
• Very High Surge Capacity
• Insulated Case
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 2.5 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is
Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Cathode Polarity Band
• Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units
per reel by adding a “RL’’ suffix to the part number
• Marking: R750, R751, R752, R754, R758, R760
MR754 and MR760 are
Motorola Preferred Devices
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50–1000 VOLTS
DIFFUSED JUNCTION
CASE 194–04
MAXIMUM RATINGS
Symbol
MR750
MR751
MR752
MR754
MR756
MR758
MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Characteristic
VRRM
VRWM
VR
50
100
200
400
600
800
1000
Volts
Non–Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
VRSM
60
120
240
480
720
960
1200
Volts
VR(RMS)
35
70
140
280
420
560
700
Volts
RMS Reverse Voltage
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
See Figures 5 and 6
IO
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions)
Operating and Storage Junction
Temperature Range
Amps
22 (TL = 60°C, 1/8″ Lead Lengths)
6.0 (TA = 60°C, P.C. Board mounting)
IFSM
TJ, Tstg
Amps
400 (for 1 cycle)
*65 to +175
°C
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop
(iF = 100 Amps, TJ = 25°C)
vF
1.25
Volts
Maximum Forward Voltage Drop
(IF = 6.0 Amps, TA = 25°C, 3/8″ leads)
VF
0.90
Volts
Maximum Reverse Current
(Rated dc Voltage)
IR
25
1.0
µA
mA
TJ = 25°C
TJ = 100°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
Rectifier Device Data
 Motorola, Inc. 1996
1
500
IFSM , PEAK HALF WAVE CURRENT (AMP)
700
TJ = 25°C
300
MAXIMUM
200
TYPICAL
70
50
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
400
300
25°C
175°C
200
25°C
TJ = 175°C
100
80
60
30
1.0
2.0
5.0
20
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
Figure 2. Maximum Surge Capability
10
7.0
5.0
+0.5
3.0
0
COEFFICIENT (mV/° C)
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
100
600
2.0
1.0
0.7
0.5
TYPICAL RANGE
–0.5
–1.0
–1.5
0.3
0.2
–2.0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.2
2.6
1.0
2.0
5.0
10
20
50
100
200
Figure 3. Forward Voltage Temperature Coefficient
Figure 1. Forward Voltage
R θJL(t) , JUNCTION–TO–LEAD TRANSIENT
THERMAL RESISTANCE ( °C/W)
0.5
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
10
L
1/2”
3/8”
L
1/4”
5.0
1/8”
HEAT SINK
3.0
Both leads to heat sink, with lengths as shown. Variations in RqJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about ±20% from the values shown. Values
for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For RqJL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10 µs at a continuing slope.
2.0
1.0
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance
2
Rectifier Device Data
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
28
RESISTIVE INDUCTIVE
LOADS
L = 1/8”
24
1/4”
20
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
3/8”
16
12
5/8”
8.0
4.0
0
0
20
40
60
80
100
120
140
160
180
200
7.0
RθJA = 25°C/W
SEE NOTE
6.0
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS – 1 & 3
5.0
I(pk) = 5 Iavg
I(pk) = 10 Iavg
I(pk) = 20 Iavg
4.0
3.0
RθJA = 40°C/W
SEE NOTE
2.0
6 (IPK/IAVE = 6.28)
1.0
0
f = 60 Hz
0
40
20
TL, LEAD TEMPERATURE (°C)
80
60
100
120
140
160
180
200
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Maximum Current Ratings
Figure 6. Maximum Current Ratings
NOTES
THERMAL CIRCUIT MODEL
PF(AV) , POWER DISSIPATION (WATTS)
32
(For Heat Conduction Through The Leads)
CAPACITANCE LOADS
I(pk) = 5 Iavg
28
24
10 Iavg
20
20 Iavg
6
RθS(A)
1 & 3
RθL(A)
RθJ(A)
TA(A)
RθL(K)
RθJ(K)
RθS(K)
TA(K)
PF
TL(A)
TC(A)
TJ
TC(K)
TL(K)
16
12
RESISTIVE – INDUCTIVE LOADS
8.0
4.0
0
0
8.0
4.0
12
16
20
24
28
32
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Power Dissipation
R θJL , THERMAL RESISTANCE,
JUNCTION–TO–LEAD( ° C/W)
40
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
35
30
25
20
15
10
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
5.0
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
L, LEAD LENGTH (INCHES)
Figure 8. Steady State Thermal Resistance
Rectifier Device Data
1.0
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RS = Thermal Resistance, Heat Sink to Ambient
RL = Thermal Resistance, Lead to Heat Sink
RJ = Thermal Resistance, Junction to Case
PF = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
RL = 40°C/W/in. Typically and 44°C/W/in Maximum.
RJ = 2°C/W typically and 4°C/W Maximum.
Since RJ is so low, measurements of the case temperature, TC, will be
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds TJ(PK) close to TJ(AVG). Therefore maximum lead temperature may
be found from: TL = 175°–RθJL PF. PF may be found from Figure 7.
The recommended method of mounting to a P.C. board is shown on the
sketch, where RθJA is approximately 25°C/W for a 1–1/2” x 1–1/2” copper
surface area. Values of 40°C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Board Ground Plane
Recommended mounting for half wave circuit
3
30
t rr , REVERSE RECOVERY TIME ( m s)
RELATIVE EFFICIENCY (%)
100
TJ = 25°C
70
TJ = 175°C
50
CURRENT INPUT WAVEFORM
30
20
1.0
2.0
5.0 7.0 10
3.0
20
30
50
20
TJ = 25°C
10
7.0
IF = 5 A
3A
1A
5.0
IF
3.0
0
2.0
IR
trr
1.0
0.1
70 100
0.2
REPETITION FREQUENCY (kHz)
t fr , FORWARD RECOVERY TIME ( m s)
1.0
TJ = 25°C
C, CAPACITANCE (pF)
300
200
100
70
50
20
uf
tfr
0.5
ufr
ufr = 1.0 V
0.3
0.2
ufr = 2.0 V
5.0 7.0 10
3.0
2.0
20
30
50
70 100
2.0
1.0
10
VO
Figure 13. Single–Phase Half–Wave
Rectifier Circuit
The rectification efficiency factor σ shown in Figure 9 was
calculated using the formula:
V2o(dc)
RL
+ P(rms) + V2o(rms) .100% +
(1)
V 2o (dc)
.100%
V 2o (ac) V 2o (dc)
)
For a sine wave input Vm sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
V2m
p 2R L
.
V2m 100%
4R L
7.0
For a square wave input of amplitude Vm, the efficiency
factor becomes:
RL
RL
5.0
Figure 12. Forward Recovery Time
RS
P (dc)
3.0
IF, FORWARD PULSE CURRENT (AMP)
Figure 11. Junction Capacitance
4
TJ = 25°C
0.7
VR, REVERSE VOLTAGE (VOLTS)
+
5.0 7.0 10
0.1
10
1.0
σ (sine)
3.0
Figure 10. Reverse Recovery Time
30
σ
2.0
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
Figure 9. Rectification Efficiency
1000
700
500
0.5 0.7 1.0
0.3
+ π42 .100% + 40.6%
(2)
σ (square)
+
V 2m
2R L
.
V 2m 100%
RL
+ 50%
(3)
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting in an increasing ac voltage component across
RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor σ, as shown on
Figure 9.
It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses.
Data was obtained by measuring the ac component of Vo
with a true rms ac voltmeter and the dc component with a dc
voltmeter. The data was used in Equation 1 to obtain points
for Figure 9.
Rectifier Device Data
PACKAGE DIMENSIONS
A
D
NOTES:
1. CATHODE SYMBOL ON PACKAGE.
1
K
DIM
A
B
D
E
B
MILLIMETERS
MIN
MAX
8.43
8.69
5.94
6.25
1.27
1.35
25.15
25.65
INCHES
MIN
MAX
0.332
0.342
0.234
0.246
0.050
0.053
0.990
1.010
STYLE 1:
PIN 1. CATHODE
2. ANODE
K
2
CASE 194–04
ISSUE F
Rectifier Device Data
5
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6
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Rectifier Device
Data
MR750/D