AOSMD AOP610L Complementary enhancement mode field effect transistor Datasheet

AOP610
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AOP610 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used to form a level shifted high side
switch, and for a host of other applications. A
Schottky diode in parallel with the n-channel
FET reduces body diode related losses. It is
ESD protected. Standard product AOP610 is
Pb-free (meets ROHS & Sony 259
specifications). AOP610L is a Green Product
ordering option. AOP610 and AOP610L are
electrically identical.
n-channel
p-channel
VDS (V) = 30V
-30V
-6.2A (V GS=10V)
ID = 7.7A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 37m Ω (VGS = -10V)
< 42mΩ (VGS=4.5V)
< 60m Ω (VGS = -4.5V)
ESD rating: 1500V (HBM)
D2
PDIP-8
S2/A
G2
S1
G1
1
2
3
4
8
7
6
5
D2/K
D2/K
D1
D1
N-ch
D1
K2
G2
G1
P-ch
S2
A2
n-channel
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Max n-channel
Symbol
VDS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
GS
Continuous Drain
Current A
Pulsed Drain Current
TA=25°C
ID
IDM
TA=70°C
B
TA=25°C
Power Dissipation
Avalanche Current B
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
6.1
-4.9
V
A
2.3
1.45
1.45
15
20
A
11
20
mJ
-55 to 150
-55 to 150
°C
Max
Thermal Characteristics: n-channel+schottky and p-channel
Symbol
Parameter
A
t ≤ 10s
Maximum Junction-to-Ambient
RθJA
A
Steady-State
Maximum Junction-to-Ambient
RθJL
Steady-State
Maximum Junction-to-Lead C
A
t ≤ 10s
Maximum Junction-to-Ambient
RθJA
A
Steady-State
Maximum Junction-to-Ambient
C
RθJL
Steady-State
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
-6.2
-30
EAR
TJ, TSTG
±20
7.7
Units
V
30
IAR
B
Max p-channel
-30
2.3
PD
TA=70°C
S1
W
Typ
n-ch
n-ch
n-ch
45
78
30
55
95
40
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
38.5
78
28
55
95
40
°C/W
°C/W
°C/W
AOP610
N-Channel+Schottky Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=4.5V, I D=4A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
VDS=5V, ID=7.7A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
50
V
10
µA
10
µA
2
3
V
20
24
29
35
34
42
A
18
543
mΩ
mΩ
S
0.5
1
V
3
A
630
pF
VGS=0V, VDS=15V, f=1MHz
142
VGS=0V, VDS=0V, f=1MHz
2.1
3
Ω
11
15
nC
5.3
7
nC
pF
76
VGS=10V, VDS=15V, I D=7.7A
VGS=10V, VDS=15V, RL=1.9Ω,
RGEN=3Ω
pF
1.9
nC
4
nC
4.7
7
ns
4.9
10
ns
16.2
22
ns
3.5
7
ns
ns
nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7.7A, dI/dt=100A/µs
15.7
20
Body Diode Reverse Recovery Charge
IF=7.7A, dI/dt=100A/µs
7.9
10
Qrr
Units
125
TJ=125°C
Static Drain-Source On-Resistance
Coss
2
TJ=55°C
VGS=10V, I D=7.7A
IS
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. Rev 0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOP610
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
5V
10V
4.5V
25
VDS=5V
16
4V
12
ID(A)
ID (A)
20
15
3.5V
8
125°C
10
4
5
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
3.5
4
4.5
150
175
VGS (Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
1.6
40
Normalized On-Resistance
VGS=4.5V
35
RDS(ON) (mΩ)
1
30
25
20
15
VGS=10V
1.5
VGS=10V
ID=7.7A
1.4
1.3
VGS=4.5V
ID=4A
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
25
50
75
100
125
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
ID=7.7A
60
125°C
1.0E+00
IS Amps
RDS(ON) (mΩ)
50
125°C
40
30
25°C
1.0E-01
1.0E-02
20
25°C
1.0E-03
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
AOP610
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
800
Capacitance (pF)
VGS (Volts)
8
f=1MHz
VGS=0V
900
VDS=15V
ID=7.7A
6
4
Ciss
700
600
500
400
Coss
300
200
2
100
Crss
0
0
0
2
4
6
8
10
0
12
Qg (nC)
Figure 7: Gate-Charge characteristics
100
ID (Amps)
20
25
30
TJ(Max)=150°C
TA=25°C
15
100µs
10µs
10ms
0.1s
1
15
20
Power W
1ms
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
5
1s
10
5
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
AOP610
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
30
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, I D=-6.2A
TJ=125°C
VGS=-4.5V, I D=4A
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-6.2A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
V
TJ=55°C
gFS
Units
-1
Zero Gate Voltage Drain Current
Coss
Max
VDS=-24V, VGS=0V
IDSS
IS
Typ
-5
-1.8
10
µA
-3
V
A
30.5
37
43
52
47
60
mΩ
-1
V
3
A
1250
pF
12.5
179
pF
134
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, I D=-6.2A
mΩ
S
-0.77
1040
VGS=0V, VDS=-15V, f=1MHz
µA
pF
5
10
Ω
16.8
22
nC
8.7
12
nC
3.4
nC
5
nC
9
12
ns
5.7
11
ns
22.7
30
ns
10.2
20
ns
IF=-6.2A, dI/dt=100A/µs
21.7
27
IF=-6.2A, dI/dt=100A/µs
13.6
18
ns
nC
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
A: The value of R θJA
is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value in
θJA
any
given
application
depends on
the user's
specific
design.
The
current
rating
is based
the t≤ 10s
thermal
rating. rating.
value in any a given application
depends
on the
user'sboard
specific
board
design.
The
current
ratingon
is based
on the
t≤ 10sresistance
thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
is the sum of the thermal impedence from junction to lead RθJL
and lead to ambient. RθJL and RθJC are equivalent terms referring to
C. The R θJA
θJA
θJL
thermal
resistance
from junction
to drain
lead.
D. The static
characteristics
in Figures
1 to
6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
D.
The static
characteristics
Figures
1 to 6,12,14
are on
obtained
using
80µswith
pulses,
cyclein0.5%
E. These
tests
are performedinwith
the device
mounted
1 in2 FR-4
board
2oz.duty
Copper,
a stillmax.
air environment with TA=25°C. The SOA
E.
These
tests are
performed
with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
curve
provides
a single
pulse rating.
provides a single pulse rating.
F. Rev 0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOP610
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
-10V
-6V
20
15
-ID(A)
-4V
-5V
20
-ID (A)
VDS=-5V
-4.5V
25
-3.5V
15
10
10
VGS=-3V
125°C
5
5
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
90
3
4
5
6
1.60
Normalized On-Resistance
80
70
RDS(ON) (mΩ)
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-4.5V
60
50
40
VGS=-10V
30
VGS=-10V
ID=-6.2A
1.40
VGS=-4.5V
ID=-4A
1.20
1.00
0.80
20
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
1.0E+01
ID=-6.2A
90
1.0E+00
80
1.0E-01
125°C
1.0E-02
-IS (A)
RDS(ON) (mΩ)
70
60
125°C
50
1.0E-03
40
1.0E-04
30
25°C
25°C
1.0E-05
20
1.0E-06
10
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOP610
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-6.2A
1250
Capacitance (pF)
-VGS (Volts)
8
6
4
2
Ciss
1000
750
500
Coss
Crss
250
0
0
0
4
8
12
16
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
25
30
0.1s
30
Power (W)
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
10ms
1s
20
10
10s
DC
0
0.001
0.1
0.1
15
40
TJ(Max)=150°C, TA=25°C
1.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
Similar pages