Intersil FSTYC9055D1 Radiation hardened, segr resistant p-channel power mosfet Datasheet

FSTYC9055D, FSTYC9055R
TM
Data Sheet
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
June 2000
File Number
4755.1
Features
• 64A, -60V, rDS(ON) = 0.023Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Typical SEE Immunity
- LET of 36MeV/mg/cm2 with VDS up to 80% of Rated
Breakdown and VGS of 0V
- LET of 26MeV/mg/cm2 with VDS up to 100% of Rated
Breakdown and VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Symbol
D
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
G
S
Formerly available as type TA17750T.
Ordering Information
RAD LEVEL
Packaging
SCREENING LEVEL PART NUMBER/BRAND
10K
Commercial
FSTYC9055D1
10K
TXV
FSTYC9055D3
100K
Commercial
FSTYC9055R1
100K
TXV
FSTYC9055R3
100K
Space
FSTYC9055R4
1
SMD2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
FSTYC9055D, FSTYC9055R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSTYC9055D, FSTYC9055R
UNITS
-60
-60
V
V
64
41
192
±20
A
A
A
V
162
65
1.30
192
64
192
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
TEST CONDITIONS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
VDS = -48V,
VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±20V
Drain to Source On-State Voltage
Drain to Source On Resistance
VDS(ON)
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = -12V, ID = 64A
ID = 41A,
VGS = -12V
TC = 25oC
TC = 125oC
VDD = -30V, ID = 64A,
RL = 0.47Ω, VGS = -12V,
RGS = 2.35Ω
tf
Total Gate Charge
Qg(TOT)
VGS = 0V to -20V
Gate Charge at 12V
Qg(12)
VGS = 0V to -12V
Threshold Gate Charge
Qg(TH)
VGS = 0V to -2V
Gate Charge Source
VDD = -30V,
ID = 64A
Qgs
Gate Charge Drain
Qgd
Plateau Voltage
V(PLATEAU)
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
2
RθJC
MIN
TYP
MAX
UNITS
-60
-
-
V
-
-
-7.0
V
-2.0
-
-6.0
V
-1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
200
nA
-
-
-1.60
V
-
0.016
0.023
Ω
-
-
0.037
Ω
-
-
60
ns
-
-
45
ns
-
-
90
ns
-
-
35
ns
-
-
330
nC
-
160
190
nC
-
-
18
nC
-
51
71
nC
-
31
46
nC
ID = 64A, VDS = -15V
-
-7
-
V
VDS = -25V, VGS = 0V,
f = 1MHz
-
7100
-
pF
-
2130
-
pF
-
370
-
pF
0.77
oC/W
-
-
FSTYC9055D, FSTYC9055R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
TEST CONDITIONS
ISD = 64A
trr
MIN
TYP
MAX
UNITS
-0.6
-
-1.8
V
-
-
120
ns
ISD = 64A, dISD/dt = 100A/µs
Electrical Specifications up to 100K RAD
TC = 25oC, Unless Otherwise Specified
PARAMETER
MIN
MAX
UNITS
(Note 3)
BVDSS
VGS = 0, ID = 1mA
-60
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Drain to Source Breakdown Volts
SYMBOL
TEST CONDITIONS
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = -48V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = -12V, ID = 64A
-
-1.60
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = -12V, ID = 41A
-
0.023
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
TEST
SYMBOL
ION
SPECIES
Single Event Effects Safe Operating Area
SEESOA
Ni
26
43
20
-60
Br
37
36
10
-60
Br
37
36
15
-36
Br
37
36
20
-24
NOTES:
4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
-70
1E-3
LIMITING INDUCTANCE (HENRY)
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-60
VDS (V)
-50
-40
-30
-20
-10
TEMP = 25oC
0
0
5
10
15
20
25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
-10
-30
-100
-300
DRAIN SUPPLY (V)
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
-1000
FSTYC9055D, FSTYC9055R
Performance Curves
Unless Otherwise Specified
(Continued)
70
500
TC = 25oC
ID , DRAIN CURRENT (A)
60
ID , DRAIN (A)
50
40
30
20
100
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
0
-50
0
50
100
1
-1
150
TC , CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
100µs
-10
-100
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
-200
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, VGS = -12V, ID = 41A
NORMALIZED rDS(ON)
2.0
QG
-12V
QGS
QGD
VG
1.5
1.0
0.5
0.0
-80
CHARGE
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
NORMALIZED
THERMAL RESPONSE (ZθJC)
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
0.001
10-5
10-4
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
t1
t2
10-1
100
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4
101
FSTYC9055D, FSTYC9055R
Performance Curves
Unless Otherwise Specified
(Continued)
IAS , AVALANCHE CURRENT (A)
500
STARTING TJ = 25oC
100
STARTING TJ = 150oC
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
10
0.1
10
1
tAV, TIME IN AVALANCHE (ms)
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
VDS
IAS
VDD
+
50Ω
tP
VDD
50V-150V
DUT
50W
VGS ≤ 20V
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
tON
VDD
tOFF
td(ON)
td(OFF)
tr
VDS
RL
tf
90%
90%
VDS
10%
0V
10%
DUT
90%
VGS = -12V
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
5
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FSTYC9055D, FSTYC9055R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
Drain to Source On Resistance
rDS(ON)
TC = 125oC at Rated ID
±20% (Note 8)
Ω
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = -30V, t = 250µs
VGS = -30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
MAX
UNITS
VDS = -48V, t = 10ms
9.0
A
IAS
VGS(PEAK) = -15V, L = 0.1mH
192
A
Thermal Response
∆VSD
tH = 10ms; VH = -25V; IH = 4A
65
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = -20V; IH = 4A
135
mV
Safe Operating Area
SOA
Unclamped Inductive Switching
6
TEST CONDITIONS
FSTYC9055D, FSTYC9055R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
7
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSTYC9055D, FSTYC9055R
SMD2
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
E
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.130
0.142
3.30
3.60
3
D
b
0.135
0.145
3.43
3.68
-
D
0.520
0.530
13.20
13.46
-
D1
0.435
0.445
11.05
11.30
-
D2
0.115
0.125
2.92
3.17
-
E
0.685
0.695
17.40
17.65
-
E1
0.470
0.480
11.94
12.19
-
E2
0.152
0.162
3.86
4.11
-
NOTES:
A
1.
2.
3.
4.
E2
E1
No current JEDEC outline for this package.
Controlling dimension: INCH.
Measurement prior to pre-solder coating the mounting pads.
Revision 3 dated 5-00.
2
D1
D2
3
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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8
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