MOTOROLA MRF160

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by MRF160/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver from
30–500 MHz.
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 4.0 Watts
Gain = 17 dB
Efficiency = 50%
4.0 W, to 400 MHz
MOSFET BROADBAND
RF POWER FET
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 Volts
CASE 249–06, STYLE 3
D
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
± 40
Vdc
Drain Current–Continuous
ID
1.0
ADC
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
PD
24
0.14
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
RθJC
7.2
°C/W
Rating
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF160
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
—
—
—
—
0.8
—
—
1.0
1.0
3.0
6.0
—
3.8
—
110
160
—
—
6.0
—
—
8.0
—
—
0.8
—
15
17
—
45
50
—
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
IDSS
Gate–Source Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mA
µA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
VGS(th)
Drain Source On–Voltage
(VDS (on), VGS = 10 Vdc, ID = 500 mA)
VDS(on)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mA)
Vdc
Vdc
gfs
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Gps
Drain Efficiency
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
η
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
ψ
%
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Zin
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA)
Zout
MRF160
2
dB
Ohms
—
5.23–j 27.2
—
—
14.7–j 31.2
—
Ohms
MOTOROLA RF DEVICE DATA
RFC1
R4
R3
C7
C8
D1
C10
C9
+
VDD 28 V
+
Vdc
C11
–
–
RFC2
R2
L3
C6
Z6
Z5
C5
Z7
RF OUTPUT
R1
RF INPUT
Z1 C1
Z2
L1
Z3
C4
L2
C2
Z4
D.U.T.
C3
0.240″
0.95″
0.55″
0.65″
L2
C1, C5
C2
C3
C4
C6, C7, C8
C9, C10
C11
L1
L2
L3
R1
R2
220 pF, Chip Capacitor
18 pF, ATC Chip Capacitor
2.0–20 pF, Johanson Trimmer Capacitor
2.0–10 pF, Johanson Trimmer Capacitor
0.1 µF
680 pF, Feed Through
50 µF, 50 V
#20 AWG, 1 Turn 0.255″ ID
#20 AWG, Hairpin 1.3″ long, bend into hairpin
#20 AWG, Hairpin 1.1″ long, bend into hairpin
160 Ω, 1/2 Watt
10 kΩ, 1/2 Watt
R3
R4
RFC1
RFC2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
L3
10 kΩ, 10 Turns Bourns
1.8 kΩ, 1/4 Watt
Ferroxcube VK200–19/4B
10 Turns, #20 AWG, Enameled Close
Wound, 0.250″ ID
Microstrip Line 0.167″ wide, 0.820″ long
Microstrip Line 0.240″ wide, 0.240″ long
Microstrip Line 0.240″ wide, 0.240″ long
Microstrip Line 0.230″ wide, 0.590″ long
Microstrip Line 0.230″ wide, 0.580″ long
Microstrip Line 0.167″ wide, 0.620″ long
Microstrip Line 0.167″ wide, 0.800″ long
Board Material 0.060″ Glass Teflon 2 oz. Copper clad both sides εr = 2.55
Figure 1. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF160
3
Typical Characteristics
6
f = 400 MHz
VDS = 28 Vdc
IDQ = 50 mA
5
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
6
4
f = 500 MHz
3
2
f = 400 MHz
VDS = 13.5 Vdc
IDQ = 50 mA
1
0
0
50
100
150
PIN, INPUT POWER (mW)
800
5
Pin = 250 mW
4
150 mW
3
50 mW
2
f = 400 MHz
IDQ = 50 mA
1
0
12
250
Figure 2. Output Power versus Input Power
28
3.5
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
26
4
35
Typical Device Shown
VDD = 28 V
IDQ = 100 mA
VGS(th) = 3 V
30
25
3
VDS = 28 V
IDQ = 50 mA
Pin = Constant
2.5
20
2
1.5
15
10
f = 400 MHz
f = 400 MHz
1
0.5
5
0
–10
–8
–6
–4
–2
0
2
4
6
VDS, GATE–SOURCE VOLTAGE (VOLTS)
8
0
10
0
Figure 4. Output Power versus Gate Voltage
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
4
4.5
Figure 5. Output Power versus Gate Voltage
32
10
I D, DRAIN CURRENT (AMPS)
f = 1.0 MHz
VGS = 0 V
28
C, CAPACITANCE (pF)
16
20
24
18
22
VDS, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Voltage
40
24
20
16
12
Coss
Ciss
8
4
0
14
1
0.1
Crss
0
4
8
12
16
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
24
28
Figure 6. Capacitance versus Drain–Source Voltage
MRF160
4
0
0
1
10
VDS, DRAIN VOLTAGE (VOLTS)
100
Figure 7. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
10
0.96
– 2.0
14.47
177
0.01
96
1.11
– 5.0
30
0.99
–16
13.34
169
0.02
79
0.92
–11
50
0.97
– 28
12.96
159
0.03
70
0.90
– 22
75
0.94
– 40
12.24
148
0.04
60
0.87
– 35
100
0.90
– 52
11.40
139
0.05
51
0.84
– 45
120
0.87
– 61
10.70
132
0.05
45
0.81
– 53
150
0.83
–72
9.66
123
0.06
37
0.77
– 63
170
0.81
–79
9.05
118
0.06
33
0.75
– 69
200
0.78
– 88
8.21
110
0.06
26
0.72
–77
220
0.77
– 93
7.67
106
0.07
23
0.71
– 81
250
0.75
–100
7.00
100
0.07
18
0.69
– 87
300
0.72
–110
6.00
92
0.07
12
0.67
– 96
350
0.71
–118
5.24
84
0.07
6.0
0.66
–103
390
0.71
–124
4.73
79
0.07
1.0
0.66
–108
400
0.70
–125
4.63
77
0.07
0
0.67
–109
410
0.70
–127
4.52
76
0.07
–1.0
0.66
–110
450
0.70
–131
4.10
71
0.07
– 5.0
0.66
–114
470
0.70
–133
3.93
69
0.06
– 6.0
0.67
–116
500
0.70
–137
3.68
65
0.06
– 8.0
0.67
–118
600
0.71
–145
3.01
55
0.06
–14
0.69
–126
700
0.72
–153
2.51
46
0.05
–18
0.71
–132
800
0.73
–160
2.13
37
0.04
– 21
0.73
–137
900
0.75
–166
1.83
30
0.03
–19
0.75
–142
1000
0.76
–171
1.60
23
0.03
–10
0.77
–146
1100
0.77
–177
1.40
16
0.02
3.0
0.79
–151
1200
0.78
177
1.25
10
0.02
18
0.80
–155
1300
0.79
172
1.11
4.0
0.03
29
0.82
–159
1400
0.81
166
1.00
–1.0
0.03
35
0.83
–163
1500
0.81
161
0.90
– 6.0
0.03
48
0.85
–166
Table 1. Common Source Scattering Parameters (VDS = 28 Vdc, ID = 200 mA, 50 Ω System)
MOTOROLA RF DEVICE DATA
MRF160
5
f
S11
S21
S12
S22
(MHz)
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
10
0.96
– 4.0
16.09
176
0.01
85
1.08
– 8.0
20
1.00
–15
14.82
171
0.02
82
0.88
–10
30
0.98
– 23
14.64
164
0.03
73
0.89
– 20
50
0.94
– 39
13.76
152
0.04
63
0.86
– 38
85
0.86
– 61
11.81
134
0.06
47
0.79
– 61
150
0.73
– 91
8.63
112
0.08
27
0.70
– 91
170
0.71
– 97
7.90
107
0.09
23
0.68
– 98
200
0.68
–106
6.97
101
0.09
17
0.67
–106
210
0.68
–109
6.68
99
0.09
15
0.66
–108
250
0.66
–117
5.75
92
0.09
10
0.65
–116
300
0.64
–126
4.85
84
0.09
4.0
0.64
–124
350
0.64
–133
4.18
78
0.09
–1.0
0.64
–129
390
0.64
–137
3.75
73
0.09
– 5.0
0.65
–133
400
0.64
–138
3.66
71
0.09
– 6.0
0.65
–134
410
0.64
–140
3.57
70
0.09
–7.0
0.65
–135
450
0.64
–143
3.23
66
0.08
–10
0.66
–138
470
0.65
–145
3.08
64
0.08
–11
0.66
–139
500
0.65
–147
2.88
61
0.08
–13
0.67
–141
550
0.66
–151
2.59
56
0.08
–16
0.67
–144
600
0.67
–154
2.35
52
0.07
–18
0.68
–146
700
0.69
–160
1.96
43
0.07
– 22
0.71
–150
800
0.70
–166
1.67
35
0.06
– 25
0.73
–154
900
0.72
–171
1.43
28
0.05
– 24
0.75
–158
1000
0.74
–177
1.26
22
0.04
– 21
0.77
–161
1100
0.74
178
1.11
16
0.04
–14
0.78
–164
1200
0.76
173
0.99
10
0.04
– 6.0
0.80
–168
1300
0.78
168
0.88
5.0
0.04
2.0
0.81
–171
1400
0.79
163
0.80
0
0.03
8.0
0.83
–174
1500
0.80
158
0.72
– 5.0
0.03
19
0.84
–177
Table 2. Common Source Scattering Parameters (VDS = 12.5 Vdc, ID = 200 mA, 50 Ω System)
MRF160
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2
K
H
4
J
D
1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE = GROUND AND IS CONNECTED
TO PIN 1 AND 3.
M
DIM
A
C
D
H
J
K
M
A
C
SEATING
PLANE
INCHES
MIN
MAX
0.271
0.286
0.112
0.136
0.215
0.235
0.055
0.065
0.003
0.007
0.435
–––
_
45 REF
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.88
7.26
2.84
3.45
5.46
5.97
1.40
1.65
0.08
0.18
11.05
–––
_
45 REF
SOURCE
GATE
SOURCE
DRAIN
CASE 249–06
ISSUE H
MOTOROLA RF DEVICE DATA
MRF160
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF160
8
◊
*MRF160/D*
MRF160/D
MOTOROLA RF DEVICE
DATA