Order this document by MRF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55% • Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Facilitates Manual Gain Control, ALC and Modulation Techniques • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D CASE 319–07, STYLE 3 G S MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDSS 65 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 Vdc VGS ± 40 Adc Drain Current — Continuous ID 4.0 Adc Total Device Dissipation @ TC = 25°C Derate Above 25°C PD 70 0.4 Watts W/°C Storage Temperature Range Tstg – 65 to 150 °C TJ 200 °C Symbol Max Unit RθJC 2.5 °C/W Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF166C 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain–Source Breakdown Voltage (VGS = 0 V, ID = 5.0 mA) V(BR)DSS 65 — — V Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS — — 1.0 mA Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) IGSS — — 1.0 µA Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 V Forward Transconductance (VDS = 10 V, ID = 1.5 A) gfs 600 800 — mhos Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss — 30 — pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Coss — 35 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Crss — 4.5 — pF Noise Figure (VDD = 28 V, f = 30 MHz, IDQ = 50 mA) NF — 2.5 — dB Common Source Power Gain (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) Gps 14 17 — dB Drain Efficiency (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA) η 50 55 — % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Electrical Ruggedness (VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA, Load VSWR 30:1 at All Phase Angles) MRF166C 2 ψ No Degradation in Output Power MOTOROLA RF DEVICE DATA R3 C4 + C13 VDD = 28 V C11 + + C8 D1 – RFC1 C10 R2 – Vdc C12 – RFC2 R4 C9 Z5 Z6 Z7 RF OUTPUT R1 C7 RF INPUT Z1 Z2 L1 Z3 L2 C5 Z4 C1 D.U.T. C3 C2 C1, C7 — 270 pF Chip Capacitor C2, C6 — Johanson Trimmer Capacitor, 2 – 20 pF C3 — 21 pF Mini Unelco C4, C8, C9 — 0.01 µF C5 — 18 pF Mini Unelco C10, C11 — 680 pF Feed Through C12, C13 — 50 µF, 50 V D1 — 1N5925A Motorola Zener Board Material — Teflon fiberglass 2 oz. Copper clad both sides, εr = 2.55 0.060″ Dielectric Thickness C6 L1 — #18 AWG, 2 Turns, 0.25″ ID 0.15″ Wide L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin RFC1 — Ferroxcube VK200–19/4B RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID R1 — 220 Ω 1/2 Watt R2 — 1.8 kΩ 1/4 Watt R3 — 10 kΩ, 10 Turns Bourns R4 — 10 k 1/4 Watt Z1 — Microstrip Line 0.150″ wide, 0.420″ long Z2 — Microstrip Line 0.150″ wide, 0.350″ long Z3 — Microstrip Line 0.150″ wide, 0.350″ long Z4 — Microstrip Line 0.150″ wide, 0.450″ long Z5 — Microstrip Line 0.150″ wide, 1.1″ long Z6 — Microstrip Line 0.150″ wide, 0.650″ long Z7 — Microstrip Line 0.150″ wide, 0.200″ long Figure 1. MRF166C 400 MHz Test Circuit TYPICAL CHARACTERISTICS 10 50 Coss 20 Ciss I D, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 10 Crss 5 VGS = 0 V f = 1 MHz 2 1 0 5 10 15 20 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 25 Figure 2. Capacitance versus Drain–Source Voltage MOTOROLA RF DEVICE DATA TC = 25°C 1 0.1 0 10 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 100 Figure 3. DC Safe Operating Area MRF166C 3 35 16 30 14 Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS f = 400 MHz 25 20 500 MHz 15 VDS = 28 V IDQ = 100 mA 10 5 0 12 10 f = 400 MHz 8 6 4 VDS = 13.5 V IDQ = 100 mA 2 0 0.1 0.2 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.8 0.7 Figure 4. Output Power versus Input Power 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Pin, INPUT POWER (WATTS) 0.7 0.8 Figure 5. Output Power versus Input Power 32 f = 400 MHz IDQ = 100 mA Po, OUTPUT POWER (WATTS) 28 Pin = 0.8 W 24 20 0.4 W 16 12 0.2 W 8 4 0 12 14 16 18 20 22 24 VDS, DRAIN–SOURCE (VOLTS) 26 28 Figure 6. Output Power versus Voltage 400 f = 500 MHz f = 500 MHz 400 200 ZOL* 200 Zin 100 100 Zo = 50 Ω VDD = 28 V, IDQ = 100 mA f MHz Zin OHMS 100 200 400 500 11.0 – j21.0 4.20 – j12.6 1.90 – j5.80 1.50 – j4.10 ZOL* OHMS (Pout = 20 W) 8.50 – j10.0 6.00 – j9.00 4.50 – j6.70 4.20 – j5.40 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 7. Series Equivalent Input and Output Impedance MRF166C 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N M DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 J H C E -T- SEATING PLANE STYLE 3: PIN 1. 2. 3. 4. 5. 6. SOURCE (COMMON) GATE (INPUT) SOURCE (COMMON) SOURCE (COMMON) DRAIN (OUTPUT) SOURCE (COMMON) CASE 319–07 ISSUE M MOTOROLA RF DEVICE DATA MRF166C 5 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF166C 6 ◊ *MRF166C/D* MRF166C/D MOTOROLA RF DEVICE DATA