MRF18085A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805 - 1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1800 - 1880 MHz, 85 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18085AR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18085ALSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 273 1.56 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.79 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2004. All rights reserved. RF Device Data Freescale Semiconductor MRF18085AR3 MRF18085ALSR3 5-1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6.0 — S Crss — 3.6 — pF Common- Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) Gps 13.5 15 — dB Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) η 48 52 — % Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) IRL — - 12 -9 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 - 1880 MHz) P1dB 83 90 — Watts Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) No Degradation In Output Power Before and After Test 1. Part is internally matched both on input and output. 2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring batch- to - batch consistency. MRF18085AR3 MRF18085ALSR3 5-2 RF Device Data Freescale Semiconductor VSUPPLY C7 VBIAS C8 C9 R1 + C4 R2 C6 C5 R3 RF INPUT + C2 Z1 Z2 Z5 Z8 Z9 Z10 Z6 Z11 C10 C1 Z3 C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3 Z4 Z7 Z12 RF OUTPUT C3 DUT Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB 10 pF Chip Capacitors, ATC 1.8 pF Chip Capacitor, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub 0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 30 mils, εr = 2.55 Figure 1. 1800 - 1880 MHz Test Fixture Schematic C9 R1 C4 C5 C6 C7 C8 R2 C2 C1 Strap CUT OUT AREA R3 C3 C10 MRF18085A C - PP - 02- 01- 2 - Rev0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1800 - 1880 MHz Test Fixture Component Layout MRF18085AR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 5-3 TYPICAL CHARACTERISTICS 17 17 IDQ = 1000 mA 800 mA 15 16 15 G ps , POWER GAIN (dB) 600 mA 14 13 400 mA 12 11 12 32 V 28 V 11 10 1 10 100 0.1 1000 24 V IDQ = 800 mA f = 1840 MHz TC = 25_C 8 0 VDD = 20 V 1 10 1000 100 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 120 17 Pin = 8 W VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C Pout , OUTPUT POWER (WATTS) 16 G ps , POWER GAIN (dB) 13 9 10 15 14 50_C 85_C 13 12 11 10 1 10 1000 100 80 60 0.5 W 20 1820 1840 1860 1880 1900 Figure 5. Power Gain versus Output Power Figure 6. Output Power versus Frequency 0 16 60 Gps −4 Gps @ 80 W −8 14 −12 15 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) Gps @ 30 W 15 50 14 40 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C 13 −16 IRL @ 30 W −20 IRL @ 80 W VDD = 26 Vdc IDQ = 800 mA TC = 25_C 11 10 1750 1W 40 f, FREQUENCY (MHz) 16 12 VDD = 26 Vdc IDQ = 800 mA TC = 25_C Pout, OUTPUT POWER (WATTS) 17 13 4W 100 0 1800 9 G ps , POWER GAIN (dB) 14 1800 1850 1900 −24 −28 1950 12 30 20 11 10 η 10 0.1 1 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 16 VDD = 26 Vdc f = 1840 MHz TC = 25_C 10 100 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) Figure 7. Power Gain versus Frequency Figure 8. Power Gain and Efficiency versus Output Power 0 1000 MRF18085AR3 MRF18085ALSR3 5-4 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f = 1990 MHz f = 1710 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz Zload Ω Zsource Ω 1710 1.13 - j3.62 1.79 - j2.88 1785 1.61 - j4.23 1.82 - j3.15 1805 1.69 - j4.34 1.90 - j2.66 1880 2.83 - j5.25 2.09 - j2.77 1930 3.00 - j5.18 2.01 - j2.44 1960 4.39 - j4.97 2.01 - j2.57 1990 6.59 - j4.74 1.79 - j2.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF18085AR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 5-5 NOTES MRF18085AR3 MRF18085ALSR3 5-6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M ccc B S (LID) M T A M B (LID) M (INSULATOR) B M H C F E T A A SEATING PLANE (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE F NI - 780 MRF18085AR3 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B K (FLANGE) D bbb M T A B M N M (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 F E A T A (FLANGE) SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A - 06 ISSUE F NI - 780S MRF18085ALSR3 MRF18085AR3 MRF18085ALSR3 RF Device Data Freescale Semiconductor 5-7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2004. All rights reserved. MRF18085AR3 MRF18085ALSR3 Document Number: MRF18085A Rev. 4, 12/2004 5-8 RF Device Data Freescale Semiconductor