Order this document by MRF185/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D G S (FLANGE) G D CASE 375B–02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc Storage Temperature Range Tstg – 65 to +150 °C Operating Junction Temperature TJ 200 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.45 Watts W/°C Symbol Max Unit RθJC 0.7 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0 V) IGSS – – 1 µAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 V, ID = 1 mAdc) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF185 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Quiescent Voltage (VDS = 26 V, ID = 300 mA per side) VGS(Q) 3 4 5 Vdc Delta Quiescent Voltage between sides (VDS = 26 V, ID = 300 mA per side) ∆VGS(Q) – 0.15 0.3 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A per side) VDS(on) – 0.75 1 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A per side) gfs 1.6 2 – s Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss – 38 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss – 4.6 6 pF Common Source Power Gain (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Gps 11 14 – dB Drain Efficiency (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) η 45 55 – % ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Load Mismatch (VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA, Load VSWR 5:1 at All Phase Angles) MRF185 2 Ψ No Degradation in Output Power MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q 2 PL G 0.25 (0.010) M T B L 1 –B– 5 3 K 4 D E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 R 4 PL M N F –T– A H C DIM A B C D E F G H K L N Q R INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.210 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.093 0.108 0.085 0.115 0.425 BSC 0.845 0.875 0.118 0.130 0.390 0.410 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.33 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.36 2.74 2.16 2.92 10.80 BSC 21.46 22.23 3.00 3.30 9.91 10.41 DRAIN DRAIN GATE GATE SOURCE SEATING PLANE CASE 375B–02 ISSUE A MOTOROLA RF DEVICE DATA MRF185 3 Motorola reserves the right to make changes without further notice to any products herein. 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