Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Power Gain — 10 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.25 MHz: –55 dBc @ 1 MHz BW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1990 MHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 (NI–880) (MRF19090) CASE 465C–02, STYLE 1 (NI–880S) (MRF19090S) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC > = 25°C Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.65 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF19090 MRF19090S MRF19090SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc gfs — 7.2 — S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.8 4.5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.10 — Vdc Crss — 4.2 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 10 11.5 — dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) η 33 35 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD — –30 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL — –12 — dB P1dB — 90 — W Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19090 MRF19090S MRF19090SR3 2 MOTOROLA RF DEVICE DATA B1, B2 B3, B34 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 2 Ferrite Beads, Round, Ferroxcube #56–590–65–3B Ferrite Beads, Surface Mount, Ferroxcube 0.4 – 2.5 pF Variable Capacitors, Johanson Gigatrim #27285 10 pF Chip Capacitors, B Case, ATC #100B100CCA500X 12 pF Chip Capacitor, B Case, ATC #100B120CCA500X 0.3 pF Chip Capacitor, B Case, ATC #100B0R3CCA500X 120 pF Chip Capacitors, B Case, ATC #100B12R1CCA500X 0.1 µF Chip Capacitors, Kemet #CDR33BX104AKWS 1000 pF Chip Capacitors, B Case, ATC #100B102JCA50X 22 µF, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 10 µF, 35 V Tantalum Chip Capacitors, Kemet #T495X106K035AS4394 1 µF, 35 V Tantalum Chip Capacitors, Kemet #T495X105K035AS4394 L1, L2 8 Turns, #26 AWG, 0.085″ OD, 0.330″ Long, Copper Wire R1, R2 270 Ω, 1/4 W Chip Resistors, Garrett Instruments #RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030″ Glass Teflon, εr = 2.55, 2 oz Copper, 3″ x 5″ Dimensions Figure 1. MRF19090 Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF19090 MRF19090S MRF19090SR3 3 λ λ MRF19090 Figure 2. MRF19090 Test Circuit Component Layout MRF19090 MRF19090S MRF19090SR3 4 MOTOROLA RF DEVICE DATA 5 8 '6 /01 8 & !# , 8 C 7). /;< 2$:6>;4 5 5 - 5 $% * , !-).# 5 8 '6 , 8 * 8 -). 9:;;<= 2$:6>;4 !9:;;<= :;'?>'19#@ 7). ! 7).# -). ! 7).# -). ! -).# 5 7). 5 -). -). --2!'6# --2!'6# 5 C 5 5 C 5 C 5 5 /01 & !&2# /01 & !&2 !34## 5 5 5 A' A'<A 5 19 A'<A 5 5 $% &!'# $% &!'# C 8 '6 * 8 -). 7). /;< 2$:6>;4 /01 & !&2# Figure 7. Power Gain versus Output Power MOTOROLA RF DEVICE DATA 19 A'<A /01 & !&2# 5 /01 8 & !# , 8 C * 8 -). 7). /;< 2$:6>;4 5 8 '6 , 8 C * 8 -). 7). /;< 2$:6>;4 C Figure 6. Intermodulation Products versus Output Power C 5 $% Figure 5. Third Order Intermodulation Distortion versus Output Power 5 Figure 4. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power 5 5 η Figure 3. Class AB Performance versus Frequency 8 '6 * 8 -). 7). /;< 2$:6>;4 9:;;<= /A?:A' >=/1@ :4>;4@ A:**>6@5 2B;6@ 5 5 $% 5 5 - 5 5 5 ()&!'# 5 5 !2# Figure 8. Third Order Intermodulation Distortion and Gain versus Supply Voltage MRF19090 MRF19090S MRF19090SR3 5 --2!'6# η η !"# $% &!'# 5 22!'# --2!'6# η !"# $% &!'# TYPICAL CHARACTERISTICS D * 8 -). -). >; -). * 8 -). / 8 Ω 8 , 8 C /01 8 &:11% !# f MHz Zin ZOL* Ω Zin Ω 1930 4.5 + j6.1 1.1 + j4.5 1960 4.4 + j6.0 1.1 + j4.4 1990 4.3 + j6.1 1.1 + j4.3 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. /1<@ D ?:% 69/%<; E:%<' /; 1A:'</**% E<1?<<; 4:>; /01$01 $/?<A 'A:>; <**>6><;6B :;' >;1<AC/'0=:1>/; '>%1/A1>/; ;$01 -:169>;4 <1?/A7 01$01 -:169>;4 <1?/A7 <3>6< ;'<A <%1 Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF19090 MRF19090S MRF19090SR3 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B 4 G 2X 1 Q EEE - - 2@ -2 2 -5 -2@ ) -2 ) 2 -2 !# & - F -- -2 !# 2 - 2& - B (FLANGE) 3 K 2 EEE - D - - M EEE - - - - 666 - N 666 R (INSULATOR) - - S (LID) - ::: - - (LID) (INSULATOR) - H C F E T A A SEATING PLANE B B (FLANGE) 2 - D - - M EEE - - - - R (INSULATOR) 666 - N 666 - S ::: - - (LID) - - (LID) (INSULATOR) - H C F E T A MILLIMETERS MIN MAX 2 2 @ 2 2@ -2 2 -5 -2@ ) -2 ) 2 -2 !# & - F 1 EEE INCHES MIN MAX 2 CASE 465B–03 ISSUE C (NI–880) (MRF19090) (FLANGE) K DIM A B C D E F G H K M N Q R S aaa bbb ccc A (FLANGE) MOTOROLA RF DEVICE DATA DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX MILLIMETERS MIN MAX 2 @ 2 SEATING PLANE CASE 465C–02 ISSUE A (NI–880S) (MRF19090S) MRF19090 MRF19090S MRF19090SR3 7 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19090 MRF19090S MRF19090SR3 ◊ 8 MOTOROLA RF DEVICE MRF19090/D DATA