Order this document by MRF314/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB 30 W, 30 – 200 MHz RF POWER TRANSISTORS NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 3.4 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 82 0.47 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 211–07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.13 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 30 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 30 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 30 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 3.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 3.0 mAdc hFE 20 — 80 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.5 Adc, VCE = 5.0 Vdc) NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF314 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 30 40 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz) GPE 10 13.5 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz) η 50 — — % Load Mismatch (VCC = 28 Vdc, Pout = 30 W, f = 150 MHz, VSWR = 30:1 all phase angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) No Degradation in Power Output R2 R1 RFC3 DC + 28 Vdc C8 C9 C10 RFC2 C7 L1 Z2 C1 RF INPUT RF OUTPUT Z1 DUT C2 C3 RFC1 C4 C1, C7 — 18 pF, 100 mil ATC C2 — 68 pF, 100 mil ATC C3, C6 — Johanson #JMC 5501 C4 — 270 pF, 100 mil ATC C5 — 240 pF, 100 mil ATC C8, C9 — 100 pF Underwood C10 — 1.0 µF Tantalum L1 — 2 Turns, 2.5″ #20 Wire, ID = 0.275″ C6 C5 R1, R2 — 10 Ω, 1.0 W RFC1 — 15 µH Molded Coil RFC2 — 2 Turns, 2.5″ #20 Wire, ID = 0.2″ RFC3 — Ferroxcube VK200–19/4B Z1 — Microstrip, 0.168″ W x 1.6″ L Z2 — Microstrip, 0.168″ W x 1.2″ L Board — Glass Teflon εr = 2.55 Figure 1. 150 MHz Test Circuit MRF314 2 MOTOROLA RF DEVICE DATA TYPICAL PERFORMANCE CURVES 45 50 MHz 35 200 MHz f = 30 MHz 25 150 MHz 100 MHz 15 70 MHz VCC = 28 V 5 0.03 GPE , COMMON EMITTER POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 30 0.1 1 50 MHz 25 10 70 MHz 100 MHz f = 30 MHz 20 150 MHz 15 200 MHz 10 VCC = 13.5 V 5 0.04 0.1 1 6 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 24 22 η , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 55 20 18 16 VCC = 28 V Pout = 30 W 14 70 60 VCC = 28 V Pout = 30 W 50 12 10 20 40 60 80 100 120 140 160 180 200 220 20 40 60 80 100 120 140 160 180 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Power Gain versus Frequency Figure 5. Efficiency versus Frequency MOTOROLA RF DEVICE DATA 200 220 MRF314 3 100 0 5.0 50 70 15.0 20.0 5.0 f = 200 MHz 10.0 30 150 Zin 5.0 Pout = 30 W, VCC = 28 V f MHz Zin OHMS ZOL* OHMS 30 50 70 100 150 200 2.4 – j3.4 1.6 – j2.6 0.8 – j0.8 0.7 – j0.5 0.9 + j0.9 1.3 + j1.2 18.0 – j12.1 16.5 – j12.1 15.0 – j11.8 12.9 – j10.8 11.9 – j9.4 11.5 – j8.1 10.0 f = 200 MHz 150 100 ZOL* 70 50 30 15.0 20.0 ZOL* = Conjugate of the optimum loadimpedance into which the device output operates at a given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance MRF314 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M Q M 1 DIM A B C D E H J K M Q R S U 4 R 2 S B 3 D K STYLE 1: PIN 1. 2. 3. 4. J H C E INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 EMITTER BASE EMITTER COLLECTOR SEATING PLANE CASE 211–07 ISSUE N MOTOROLA RF DEVICE DATA MRF314 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF314 6 ◊ *MRF314/D* MRF314/D MOTOROLA RF DEVICE DATA