ON MMBZ15VDLT1G 40 watt peak power zener transient voltage suppressor Datasheet

MMBZ15VDLT1G,
MMBZ27VCLT1G,
SZMMBZ15VDLT1G,
SZMMBZ27VCLT1G
40 Watt Peak Power
Zener Transient Voltage
Suppressors
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SOT−23 Dual Common Cathode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
cathode design protects two separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
The MMBZ27VCLT1G/SZMMBZ27VCLT1G can be used to
protect a single wire communication network form EMI and ESD
transient surge voltages.
The MMBZ27VCLT1G/SZMMBZ27VCLT1G is recommended by
the Society of Automotive Engineers (SAE), February 2000, J2411
“Single Wire Can Network for Vehicle Applications” specification as
a solution for transient voltage problems.
SOT−23
CASE 318
STYLE 9
ANODE 1
3 CATHODE
ANODE 2
MARKING DIAGRAM
XXX MG
G
1
Specification Features:
• SOT−23 Package Allows Either Two Separate Unidirectional
•
•
•
•
•
•
•
•
Configurations or a Single Bidirectional Configuration
Working Peak Reverse Voltage Range − 12.8 V, 22 V
Standard Zener Breakdown Voltage Range − 15 V, 27 V
Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
ESD Rating of Class 3B (exceeding 16 kV) per the Human
Body Model
Low Leakage < 100 nA
Flammability Rating: UL 94 V−O
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 12
1
XXX = 15D or 27C
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MMBZ15VDLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZMMBZ15VDLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBZ15VDLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZMMBZ15VDLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
MMBZ27VCLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZMMBZ27VCLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBZ15VDLT1/D
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C
Rating
Ppk
40
Watts
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°
225
1.8
mW
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°
mW
mW/°C
Thermal Resistance Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
− 55 to +150
°C
TL
260
°C
Lead Solder Temperature − Maximum (10 Second Duration)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
I
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
VBR
IF
Parameter
VC VBR VRWM
Working Peak Reverse Voltage
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
VC @ IPP (Note 5)
Breakdown Voltage
Device*
MMBZ15VDLT1G/T3G
VBR (Note 4) (V)
@ IT
VC
IPP
VBR
Device
Marking
VRWM
IR @ VRWM
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
15D
12.8
100
14.3
15
15.8
1.0
21.2
1.9
12
(VF = 1.1 V Max @ IF = 200 mA)
VC @ IPP (Note 5)
Breakdown Voltage
Device*
MMBZ27VCLT1G/T3G
VBR (Note 4) (V)
@ IT
VC
IPP
VBR
Device
Marking
VRWM
IR @ VRWM
Volts
nA
Min
Nom
Max
mA
V
A
mV/5C
27C
22
50
25.65
27
28.35
1.0
38
1.0
26
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
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2
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
TYPICAL CHARACTERISTICS
MMBZ15VDLT1G, SZMMBZ15VDLT1G
MMBZ27VCLT1G, SZMMBZ27VCLT1G
BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T )
BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T )
17
BIDIRECTIONAL
16
15
14
UNIDIRECTIONAL
13
-40
+125
+25
+85
TEMPERATURE (°C)
29
BIDIRECTIONAL
28
27
26
25
-55
Figure 2. Typical Breakdown Voltage
versus Temperature
1000
300
100
250
PD , POWER DISSIPATION (mW)
IR (nA)
Figure 1. Typical Breakdown Voltage
versus Temperature
10
1
0.1
0.01
-40
+25
+85
TEMPERATURE (°C)
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
+125
0
PEAK VALUE—IPP
VALUE (%)
100
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
IPP
HALF VALUE—
2
50
tP
0
0
1
2
3
t, TIME (ms)
4
25
50
75
100
125
TEMPERATURE (°C)
150
175
Figure 4. Steady State Power Derating Curve
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
Figure 3. Typical Leakage Current
versus Temperature
tr ≤ 10 ms
+125
+25
+85
TEMPERATURE (°C)
100
90
80
70
60
50
40
30
20
10
0
0
Figure 5. Pulse Waveform
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
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3
175
200
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
TYPICAL APPLICATIONS
VBatt
ECU Connector
Single Wire
CAN Transceiver
47 mH
Bus
RLoad
9.09 kW 1%
*
Load
CLoad
220 pF 10%
Loss of
Ground
Protection
Circuit
GND
*ESD Protection − MMBZ27VCLT1G or equivalent. May be
located in each ECU (CLoad needs to be reduced accordingly)
or at a central point near the DLC.
Figure 7. Single Wire CAN Network
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common
cathode zener configuration.
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4
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBZ15VDLT1/D
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