Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics Output Power — 30 Watts Gain — 7.5 dB Min @ 30 Watts Efficiency — 38% Min @ 30 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1.8 to 2.0 GHz • To be used in Class AB for DCS1800 and PCS1900/Cellular Radio • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration 30 W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 24 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous IC 10 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 0.71 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 1.4 °C/W Collector–Emitter Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0) V(BR)CEO 24 29 — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc) V(BR)EBO 4 5 — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc) V(BR)CES 60 68 — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 Ω) V(BR)CER 40 56 — Vdc ICES — — 10 mA hFE 20 50 120 — OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 V, VBE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) (1) Thermal resistance is determined under specified RF operating condition. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1996 MRF6404 MRF6404K 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Cob 30 38 — pF Common–Emitter Amplifier Power Gain (VCC = 26 V, Pout = 30 W, ICQ = 150 mA, f = 1.88 GHz) Gpe 7.5 8.5 — dB Common–Emitter Amplifier Power Gain (VCC = 26 V, Pout = 28 W, ICQ = 150 mA) (f = 1.99 GHz) Gpe 7 8 — dB 38 35 43 40 — — 30 28 35 33 — — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 V, IE = 0, f = 1 MHz) For information only. This part is collector matched. FUNCTIONAL TESTS Collector Efficiency (VCC = 26 V, Pout = 30 W, f = 1.88 GHz) (VCC = 26 V, Pout = 28 W, f = 1.99 GHz) Output Power at 1 dBc (VCC = 26 V, f = 1.88 GHz) (VCC = 26 V, f = 1.99 GHz) Output Mismatch Stress: VSWR = 3:1 (all phase angles) (VCC = 26 Vdc, Pout = 25 W, ICQ = 150 mA, f = 1.88 GHz) η % P1dBc Watts Ψ No Degradation in Output Power DCS EVALUATION f = 1.8 GHz Zin 1.9 GHz 1.9 GHz ZOL* f = 1.8 GHz Zo = 20 Ω f (GHz) Zin (Ω) ZOL* (Ω) 1.8 4.3 + j6.1 2.7 – j1.0 1.85 4.6 + j5.3 2.9 + j0.3 1.9 4.8 + j5.0 3.0 + j1.2 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 150 mA, Pout = 30 W MRF6404 MRF6404K 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 40 f = 1.7 GHz VCC = 26 V ICQ = 150 mA 35 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 40 1.9 GHz 30 1.8 GHz 25 20 15 10 5 35 Pin = 5 W 30 25 15 10 1W 5 0 0 1 2 3 4 Pin, INPUT POWER (WATTS) 5 0 1.70 6 Figure 2. Output Power versus Input Power 1.75 1.80 f, FREQUENCY (GHz) 1.85 1.90 Figure 3. Output Power versus Frequency – 25 12 3rd Order – 30 VCC = 26 V ICQ = 150 mA f = 1.88 GHz 9 6 – 35 – 40 PHASE (DEGREE) IMD, INTERMODULATION DISTORTION (dBc) 3W VCC = 26 V ICQ = 150 mA 20 5th – 45 7th – 50 VCC = 26 V ICQ= 150 mA f = 1.88 & 1.8801 GHz – 55 3 0 –3 –6 –9 – 60 0 20 10 30 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation versus Output Power MOTOROLA RF DEVICE DATA 40 0 4 8 12 16 20 24 28 32 36 40 Pout, OUTPUT POWER (WATTS) Figure 5. AM/PM Conversion MRF6404 MRF6404K 3 T2 C11 VBB VCC + R2 R3 + R4 T1 P1 L1 C10 C13 C12 C9 C7 C5 R1 BASE BIAS CIRCUIT C4 Z 4, Θ4 Z 11,Θ11 C8 C20 C2 Z5,Θ5 C1 Z2,Θ2 Z1,Θ1 RF INPUT Z6,Θ6 Z8,Θ8 Z10,Θ10 TRF1 Z12,Θ12 RF OUTPUT ΘB RF CIRCUIT CT2 C21 CT3 Decoupling Base Bias Circuit Base Bias Circuit C12, C13 P1 R3 R4 T1,T2 Z7,Θ7 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1 KΩ, Trimmer 47 Ω, Chip Resistor, 0805 330 Ω, Chip Resistor, 0805 Motorola MJD 31C C4 C5, C9 C7, C11 C8 C10 R1 R2 68 pF, Chip Capacitor, ATC 100A 330 pF, Chip Capacitor, Vitramon (0805 A331 JXB) 4.7 µF, 63 V, Electrolytic Capacitor 68 pF, Chip Capacitor, ATC 100A 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1.5 Ω, Chip Resistor, 0805 56 Ω, Chip Resistor, 1206 RF Circuit C1, C2 C20, C21 CT2 CT3 TRF1 68 pF, Chip Capacitor, ATC 100A 1.3 pF, Chip Capacitor, ATC 100A Trimmer Capacitor, Gigatrim, Ref 37281 Trimmer Capacitor, Gigatrim, Ref 37291 MRF6404 PC Board Material: εr = 2.55, H = 0.508 mm, T = 0.035 mm All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz Z1 : 50 Ω Θ1 : 10° Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5° Z4 : 74 Ω Θ4 : 68° Z5 : 12.8 Ω Θ5 : 21° Z6 : 10.4 Ω Θ6 : 49.5° Z7 : 18 Ω Θ7 : 36.5° Z8 : 45 Ω Θ8 : 20° Z10 : 50 Ω Θ10 : 10° Z11 : 74 Ω Θ11 : 74.5° Z12 : 50 Ω Θ12 : 10° Figure 6. 1.80 – 1.88 GHz Test Circuit Electrical Schematic and Components List MRF6404 MRF6404K 4 MOTOROLA RF DEVICE DATA (Not to Scale) Teflon Glass 0.5 mm – Double Side 35 µm Cu. Figure 7. 1.80 – 1.88 GHz PCN Test Circuit Photomaster VBB +VCC C12 C13 T1 C11 Â Â Â C7 L1 T2 R3 P1 R4 C10 R1 C8 R2 C9 Â Â Â C20 C1 CT2 C21 M RF INPUT C5 C4 Â Â RF OUTPUT C2 CT3 Figure 8. 1.80 – 1.88 GHz PCN Test Circuit Components Layout MOTOROLA RF DEVICE DATA MRF6404 MRF6404K 5 PCS EVALUATION 2.0 GHz f (GHz) Zin (Ω) ZOL* (Ω) 1.90 4.9 + j3.0 3.2 + j0.5 1.93 5.4 + j2.5 3.3 + j1.2 1.97 5.6 + j1.4 3.4 + j1.5 2.00 5.4 – j0.2 3.6 + j2.5 f = 1.9 GHz ZOL* Zin f = 1.9 GHz 2.0 GHz Zo = 20 Ω ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 9. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 150 mA, Pout = 28 W MRF6404 MRF6404K 6 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 40 35 Pout , OUTPUT POWER (WATTS) f = 1.9 GHz 30 2 GHz 25 20 15 10 VCC = 26 V ICQ = 150 mA 5 3 4 2 Pin, INPUT POWER (WATTS) 5 25 3W 20 1W 10 0 1.90 6 1.925 1.95 f, FREQUENCY (GHz) 1.975 2.00 Figure 11. Output Power versus Frequency 40 40 35 30 25 50 η 20 45 15 40 VCC = 26 V ICQ = 150 mA 10 35 η , EFFICIENCY (%) f = 2 GHz Pout , OUTPUT POWER (WATTS) 35 Pout , OUTPUT POWER (WATTS) VCC = 26 V ICQ = 150 mA 15 Figure 10. Output Power versus Input Power f = 1.93 GHz 30 25 50 η 20 45 15 40 VCC = 26 V ICQ = 150 mA 10 35 5 5 0 Pin = 5 W 30 5 0 1 35 η , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 40 1 2 4 3 6 5 0 1 2 Pin, INPUT POWER (WATTS) 3 4 5 6 Pin, INPUT POWER (WATTS) Figure 12. Output Power and Efficiency versus Input Power Figure 13. Output Power and Efficiency versus Input Power Pout , OUTPUT POWER (WATTS) 40 35 Pin = 5 W 30 25 3W 20 15 VCC = 26 V ICQ = 150 mA 1W 10 5 0 1.90 1.925 1.95 f, FREQUENCY (GHz) 1.975 2.00 Figure 14. Output Power versus Frequency MOTOROLA RF DEVICE DATA MRF6404 MRF6404K 7 T2 C11 VBB + R2 R3 C10 P1 C12 C9 + R4 T1 C7 L1 C13 C5 R1 BASE BIAS CIRCUIT C4 Z 4, Θ 4 Z 11,Θ 11 C8 C2 Z5,Θ5 C1 Z2,Θ2 Z1,Θ1 RF INPUT Z6,Θ6 Z7,Θ7 Z8,Θ8 Z10,Θ10 TRF1 Z12,Θ12 RF OUTPUT ΘB RF CIRCUIT CT1 Base Bias Circuit C12, C13 P1 R3 R4 T1,T2 VCC CT2 Decoupling Base Bias Circuit 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1 KΩ, Trimmer 47 Ω, Chip Resistor, 0805 330 Ω, Chip Resistor, 0805 Motorola MJD 31C C4 C5, C9 C7, C11 C8 C10 R1 R2 68 pF, Chip Capacitor, ATC 100A 330 pF, Chip Capacitor, Vitramon (0805 A331 JXB) 4.7 µF, 63 V, Electrolytic Capacitor 68 pF, Chip Capacitor, ATC 100A 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1.2 Ω, Chip Resistor, 0805 56 Ω, Chip Resistor, 1206 RF Circuit C1, C2 C20, C21 CT1, CT2 TRF1 68 pF, Chip Capacitor, ATC 100A 1.3 pF, Chip Capacitor, ATC 100A Trimmer Capacitor, Gigatrim, Ref 37271 MRF6404 PC Board Material: εr = 2.55, H = 0.508 mm, T = 0.035 mm All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz Z1 : 50 Ω Θ1 : 10° Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5° Z4 : 74 Ω Θ4 : 68° Z5 : 12.8 Ω Θ5 : 21° Z6 : 10.4 Ω Θ6 : 49.5° Z7 : 18 Ω Θ7 : 36.5° Z8 : 45 Ω Θ8 : 20° Z10 : 50 Ω Θ10 : 10° Z11 : 74 Ω Θ11 : 60° Z12 : 50 Ω Θ12 : 10° Figure 15. 1.9 – 2.0 GHz Test Circuit Electrical Schematic and Components List MRF6404 MRF6404K 8 MOTOROLA RF DEVICE DATA (Not to Scale) Teflon Glass 0.5 mm – Double Side 35 µm Cu. Figure 16. 1.9 – 2.0 GHz Test Circuit Photomaster VBB +VCC C12 C13 T1 Â Â C7 + L1 T2 R3 P1 R4 C10 R1 C8 R2 C9 C1 CT1 C4 Â M RF INPUT C5 RF OUTPUT C2 CT2 Figure 17. 1.9 – 2.0 GHz Test Circuit Components Layout MOTOROLA RF DEVICE DATA MRF6404 MRF6404K 9 PACKAGE DIMENSIONS –A– U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K N Q U –B– 3 K 2 D N INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER E J C H –T– SEATING PLANE CASE 395C–01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. 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