Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • On–Die Integrated Input Match GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.5 dB (Typ) Efficiency @ P1dB — 53% (Typ) • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465–06, STYLE 1 (NI–780) (MRF9100) CASE 465A–06, STYLE 1 (NI–780S) (MRF9100SR3) MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts W/°C Storage Temperature Range Tstg –65 to +200 °C Operating Junction Temperature TJ 200 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 1.0 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF9100 MRF9100R3 MRF9100SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain–Source Breakdown Voltage (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(Q) 3 — 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 8 — S Crss — 1.0 — pF Output Power, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz) P1dB 100 110 — W Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Gps 16 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) η 47 51 — % Input Return Loss (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f1 = 921 MHz and 960 MHz, f2 = 940 MHz) IRL Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA, f = Full GSM Band 921–960 MHz, Tone Spacing = 100 kHz) IMD Output Mismatch Stress (VDD = 26 Vdc, IDQ = 800 mA, Pout = 100 W CW, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture) dB — — — –20 –10 — — –30 — dBc No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF9100 MRF9100R3 MRF9100SR3 2 MOTOROLA RF DEVICE DATA Figure 1. MRF9100 Test Circuit Schematic Table 1. MRF9100 Test Circuit Component Designations and Values Designators Description C1, C13 22 pF, 100B Chip Capacitors, ATC #100B220GW C2, C12 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW C3 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW C4, C5 10 pF, 100B Chip Capacitors, ATC #100B100GW C6, C14 33 pF, 100B Chip Capacitors, ATC #100B330JW C7, C8, C9, C10 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW C11 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW C15 10 µF, 35 V Tantalum Chip Capacitor, Vishay–Sprague #293D106X9035D R1, R2 10 kW, 1/8 W Chip Resistors (0805) R3 1 kW, 1/8 W Chip Resistor (0805) Z1 0.495″ x 0.087″ Microstrip Z2 0.657″ x 0.087″ Microstrip Z3 0.324″ x 0.087″ Microstrip Z4 0.429″ x 0.087″ Microstrip Z5 0.250″ x 0.790″ Microstrip Z6 0.535″ x 0.790″ Microstrip Z7 0.312″ x 0.790″ Microstrip Z8 0.409″ x 0.790″ Microstrip Z9 0.432″ x 0.087″ Microstrip Z10 0.220″ x 0.087″ Microstrip Z11 0.828″ x 0.087″ Microstrip Z12 0.485″ x 0.087″ Microstrip Z13 1.602″ x 0.087″ Microstrip Substrate Taconic TLX8, Thickness 0.8 mm MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 3 MRF9100 Figure 2. MRF9100 Test Circuit Component Layout MRF9100 MRF9100R3 MRF9100SR3 4 MOTOROLA RF DEVICE DATA 1 Figure 3. MRF9100 Demo Board Schematic MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 5 Table 2. GSM 900 Optimized Demo Board Component Designations and Values Designators Description C1 1.0 µF Chip Capacitor, AVX #08053G105ZATEA (0805) C2, C5 33 pF Chip Capacitors, AVX #08051J330GBT, ACCU–P (0805) C3, C13, C14 22 µF, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394 C4 220 µF, 63 V Electrolytic Capacitor Radial, Philips #13668221 C6 5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU–P (0805) C7 4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU–P (0805) C8 22 pF Chip Capacitor, AVX #08051J220GBT, ACCU–P (0805) C9, C10 3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU–P (0805) C11 2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU–P (0805) C12 33 pF, 100B Chip Capacitor, ATC #100B330JW P1 5.0 kW Potentiometer CMS Cermet multi–turn, Bourns #3224W R1 10 W, 1/8 W Chip Resistor (0805) R2 1.0 kW, 1/8 W Chip Resistor (0805) R3 1.2 kW, 1/8 W Chip Resistor (0805) R4 2.2 kW, 1/8 W Chip Resistor (0805) R5 100 W, 1/8 W Chip Resistor (0805) R6 1.0 W, 1/8 W Chip Resistor (0805) T1 NPN Bipolar Transistor, SOT–23, Motorola #BC847 U1 Voltage Regulator, Micro–8, Motorola #LP2951 Z1 0.916″ x 0.042″ Microstrip Z2 0.169″ x 0.042″ Microstrip Z3 0.212″ x 0.042″ Microstrip Z4 0.090″ x 0.465″ Microstrip Z5 0.465″ x 0.842″ Microstrip Z6 1.776″ x 0.059″ Microstrip Z7 1.802″ x 0.059″ Microstrip Z8 1.094″ x 0.592″ Microstrip Z9 0.085″ x 0.042″ Microstrip Z10 0.198″ x 0.042″ Microstrip Z11 0.253″ x 0.191″ + 0.292″ x 0.061″ Microstrip Z12 0.181″ x 0.042″ Microstrip Z13 0.282″ x 0.042″ Microstrip Substrate Taconic RF35, Thickness 0.5 mm, εr = 3.5 MRF9100 MRF9100R3 MRF9100SR3 6 MOTOROLA RF DEVICE DATA ! $%#" " # MRF9100 Figure 4. MRF9100 Demo Board Component Layout MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 7 TYPICAL CHARACTERISTICS $% +4 4 ,4/53 ! +44 ,454/"63 - ) 85 - ) 85 ) "7 * ) 012 ) _ ' $% ) & & ) "7 - ) 85 * ) 012 & η ,0 $%+ , /53 5: Figure 9. EVM and Efficiency versus Output Power MRF9100 MRF9100R3 MRF9100SR3 8 h+454,,.4/93 ,04/93 & ,5'4,14/"673 ) "7 - ) 85 * ) 012 Figure 8. Power Gain versus Output Power $%+ , /53 Figure 7. Power Gain and Input Return Loss versus Frequency _ *+ ,-,. /0123 _ ) &_ ! +44 ,454/"63 & '+ 4,4'4/"63 ! +44 ,454/"63 & ) "7 - ) 85 ) _ Figure 6. Output Power and Efficiency versus Input Power ! #+ , /53 $% ) ) "7 - ) 85 ) _ Figure 5. Power Gain versus Output Power 012 $% $%+ , /53 - ) 85 012 012 η - ) 85 012 η+454,,.4/93 ) "7 - ) 85 * ) 012 & & ; <12 & & & ; <12 & & $%+ , /53 5: Figure 10. Spectral Regrowth versus Output Power MOTOROLA RF DEVICE DATA * ) 012 # * ) 012 $ ) Ω * ) 012 * ) 012 '? ) + - ) 85+ $% ) /3 f MHz ZOL* Ω Zin Ω 840 2.04 + j0.57 1.62 – j1.65 880 2.20 + j0.16 1.88 – j2.45 920 2.00 – j0.44 1.79 – j2.40 960 2.16 – j0.25 1.47 – j1.82 1000 2.62 – j0.25 1.58 – j1.52 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. $=> '? @! 7A$!=# !=" $# "=$**! =@==# B #+ $%% $@=+ " # =** 7 =#7C #" #=8$"%D $# " !$ $#: #% 07A #B =@$< %% 07A #B =@$< =E 7= #"= =! Z in Z * OL Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF9100 MRF9100R3 MRF9100SR3 9 NOTES MRF9100 MRF9100R3 MRF9100SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G Q 2X 1 0 5 0 6 0 ,> : 0, 5 ',5 , 5 .:0&: : '' 0,> 1: : ,',, : 0, 1 0,5, : /:3 55. 0 5F5, 6.: 3 B K 2 (FLANGE) D 5 0 6 0 0 M N R (INSULATOR) 0 5 6 0 0 777 5 0 S (LID) 777 (LID) 6 0 0 5 6 0 0 5 0 0 0 (INSULATOR) 6 0 H C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX : : : : : : : : : : : : :46 : : : : : : : : : : : : : : :4, :4, :4, MILLIMETERS MIN MAX : : : : : : : : : : : : :46 : : : : : : : : : : : : : : :4, :4, :4, .', > : 5 : 5, : , (FLANGE) CASE 465–06 ISSUE F (NI–780) (MRF9100) 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B ,> : 0, 5 ',5 , 5 .:0&: : '' 0,> 1: : ,',, : 0, 1 0,5, : /:3 55. 0 5F5, 6.: (FLANGE) D 0 5 0 6 0 N (LID) 777 M R 0 5 0 6 0 0 6 0 777 0 5 0 0 5 0 S (INSULATOR) 0 5 (LID) 6 0 (INSULATOR) 6 0 H C 3 F E A T A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465A–06 ISSUE F (NI–780S) (MRF9100SR3) DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX : : : : : : : : : : : : : : : : : : : : : : : : &&& : &&& : :4, :4, :4, MILLIMETERS MIN MAX : : : : : : : : : : : : : : : : : : : : : : : : &&& : &&& : :4, :4, :4, .', > : 5 : 5, : , MRF9100 MRF9100R3 MRF9100SR3 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9100 MRF9100R3 MRF9100SR3◊ 12 MRF9100/D MOTOROLA RF DEVICE DATA