Order this document
by MRF9135L/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
• Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: –47 dBc @ 30 kHz BW
• Internally Matched, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
880 MHz, 135 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9135L
CASE 465A–06, STYLE 1
NI–780S
MRF9135LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
PD
298
1.7
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.6
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF9135L MRF9135LR3 MRF9135LSR3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 450 µA)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1100 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 9 Adc)
gfs
—
12
—
S
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
109
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
4.4
—
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture) Single–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
Gps
16
17.8
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
η
22
25
—
%
ACPR
—
–47
–45
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
IRL
—
–13.5
–9
dB
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
η
—
24
—
%
ACPR
—
–46
—
dBc
IRL
—
–12.5
—
dB
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N–CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 135 W CW, IDQ = 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
MRF9135L MRF9135LR3 MRF9135LSR3
2
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.430″ x 0.080″ Microstrip
0.430″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.200″ x 0.220″ Microstrip
0.110″ x 0.220″ Microstrip
0.175″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.630″ Taper
0.250″ x 0.630″ Microstrip
0.050″ x 0.630″ Microstrip
0.050″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
0.105″ x 0.630″ Microstrip
0.145″ x 0.630″ Microstrip
0.200″ x 0.630″ x 0.220″ Taper
0.180″ x 0.220″ Microstrip
0.110″ x 0.220″ Microstrip
0.200″ x 0.220″ Microstrip
0.900″ x 0.080″ Microstrip
0.360″ x 0.080″ Microstrip
0.410″ x 0.080″ Microstrip
Figure 1. 880 MHz Test Circuit Schematic
Table 1. 880 MHz Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1, B2
Short Ferrite Beads, Surface Mount
95F786
Newark
C1, C7, C17, C18
47 pF Chip Capacitors, B Case
100B470JP 500X
ATC
C2, C16
0.6–4.5 Gigatrim Variable Capacitors
44F3360
Newark
C3
8.2 pF Chip Capacitor, B Case
100B8R2BP 500X
ATC
C4, C15
0.8–8.0 Gigatrim Variable Capacitors
44F3360
Newark
C5, C6
12 pF Chip Capacitors, B Case
100B120JP 500X
ATC
C8
20K pF Chip Capacitor, B Case
200B203MP50X
ATC
C9, C20, C21, C22
10 µF, 35 V Tantulum Capacitors
93F2975
Newark
C10, C11, C12, C13
7.5 pF Chip Capacitors, B Case
100B7R5JP 500X
ATC
C14
11 pF Chip Capacitor, B Case
100B110JP 500X
ATC
C19
0.56 µF, 50 V Chip Capacitor
C1825C564K5RA7800
Kemet
C23
470 µF Electrolytic Capacitor
14F185
Newark
L1, L2
12.5 nH Coilcraft inductors
A04T–5
Coilcraft
WB1, WB2
10 mil Brass Shim (0.205 x 0.530)
RF–Design Lab
RF–Design Lab
PCB
Etched Circuit Board
900 MHz 4X6 Cobra Rev 02
CMR
Bedstead
Circuit Bedstead
DWG #990528JAM2
RF–Design Lab
Board Material
30 mil Glass Teflon, εr = 2.55, 2 oz Cu
GX–0300–55–22
Arlon
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
3
CUT OUT AREA
MRF9135L
900 MHz
Figure 2. 880 MHz Test Circuit Component Layout
MRF9135L MRF9135LR3 MRF9135LSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
# $%
&'( # )!*+,
- # .!
/! 0 12&(3 045%3 6*15*
76881% &$ (97&'*9 !
3 >:>00>)$,
!>)$%,
3>>:>!>)$,
h 3>!
::;>)?,
83 :-:; )/<=,
Figure 3. Class AB Broadband Circuit
Performance
- # .!
.!
+
.!
+
.!
- # .!
.!
.!
.!
&'(3 : )!0, :
&'(3 : )!0, :
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
# $%
- # .!
8
# /<=3 8 # +
/<=
7$ 7$7
(9 7$7
(9 7$7
3>>:>!>)$,
/3 :/!>0>)$%,
+
# $%
8
# /<=3 8 # +
/<=
# $%
- # .!
8
# /<=
η
&'(3 : )!0, :
&'(3 : )!0, !+
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
η3>!>::;>)?,
# $%
8
# /<=3 8 # +
/<=
+
3>>:>!>)$,
/3 :/!>0>)$%,
MRF9135L MRF9135LR3 MRF9135LSR3
5
η
# $%
- # .!
8
# /<=3 8 # +
/<=
/
η3>!>::;>)?,
3>>:>!>)$,
/3 :/!>0>)$%,
&'(3 : )!0, :
3>>:>!>)$,
η
# $%3 - # .!
8 # /<=
/! 0 12&(3 045%3 6*15*3
76881% &$ (97&'*9 !
@<=
!
+ /<=
η3>!>::;>)?,
!3>!A!:><!:>:>!>)$%,
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
&'(3 : )!0, !+
Figure 9. N–CDMA Performance Output Power
versus Gain, ACPR, Efficiency
+
+ /<= ! B
@<= ! B
@<= ! B
@<= ! B
@<= +
+
+ + +
+
+
+
+
+
+
83 :-:; )/<=,
Figure 10. Typical CDMA Spectrum
MRF9135L MRF9135LR3 MRF9135LSR3
6
MOTOROLA RF DEVICE DATA
8 # /<=
D
8 # /<=
& # Ω
8 # /<=
15
8 # /<=
# 3 - #
.!3 &'( # !*+
f
MHz
Zin
ZOL*
Ω
Zin
Ω
865
1.15 – j0.3
1.17 + j0.24
880
1.25 – j0.5
1.22 + j0.1
895
1.35 – j0.75
1.32 + j0.07
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
&(C
D E6 %9& 5 F6 $ &5 (76$&88 F(E5 *6153 &'('(
&E73 $7615 881%15%4 65$ 15(7.&$'26(1&5 $1 (&7(1&5+
5'(
/6(%915*
(E&7@
'('(
/6(%915*
(E&7@
1%
5$7 (
Z
in
Z
*
OL
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
7
NOTES
MRF9135L MRF9135LR3 MRF9135LSR3
8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
9
NOTES
MRF9135L MRF9135LR3 MRF9135LSR3
10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
Q
FFF
2X
1
!
/
/
/
:0C
+ /:0 ! :! : !0
;
+/
+
+ /:0C <+
+ :::
+ /:0 < 0 /:!0: + )+, !!;
/ !G!: ;+
3
B
K
2
(FLANGE)
D
FFF
/
!
/
/
M
FFF
N
R
(INSULATOR)
/
!
/
/
%%%
!
/
%%%
/
S
(LID)
/
!
/
/
666
!
/
(LID)
/
(INSULATOR)
/
/
H
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
+
+
+
+
+
+
+
+
+
+
+
+
+
>0
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+>:
+
>:
+
>:
MILLIMETERS
MIN
MAX
+
+
+
+
+
+
+
+
+
+
+
+
+>0
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
>:
+>:
+
>:
0;: C
+ !
+ !:
+ 0:
(FLANGE)
CASE 465–06
ISSUE F
NI–780
MRF9135L
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
:0C
+ /:0 ! :! : !0
;
+/
+
+ /:0C <+
+ :::
+ /:0 < 0 /:!0: + )+, !!;
/ !G!: ;+
(FLANGE)
D
FFF
/
!
/
/
N
(LID)
%%%
M
R
/
!
/
/
/
/
%%%
/
!
/
666
/
!
/
S
(INSULATOR)
FFF
/
!
(LID)
/
(INSULATOR)
/
H
C
3
F
E
A
T
A
(FLANGE)
MOTOROLA RF DEVICE DATA
SEATING
PLANE
CASE 465A–06
ISSUE F
NI–780S
MRF9135LSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+>:
+
>:
+
>:
MILLIMETERS
MIN
MAX
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
>:
+>:
+
>:
0;: C
+ !
+ !:
+ 0:
MRF9135L MRF9135LR3 MRF9135LSR3
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF9135L MRF9135LR3 MRF9135LSR3
◊
12
MOTOROLA RF DEVICE DATA
MRF9135L/D