ISC BUL57 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUL57
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.65V(Max) @ IC= 2A
·High Speed Switching
APPLICATIONS
·Designed for use in lighting applications and low cost switchmode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
16
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
7
A
PC
Collector Power Dissipation
TC=25℃
85
W
Ti
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃/W
Rth j-A
Thermal Resistance,Junction to Ambient
62.5
℃/W
isc website:www.iscsemi.com
1
isc & iscsemi is registered trademark
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BUL57
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; Ib=0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A ;IB= 0.4A
0.65
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 3A ;IB= 0.6A
0.75
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 4A ;IB= 0.8A
1.2
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= 5A ;IB= 1A
2.0
V
VCE(sat)-5
Collector-Emitter Saturation Voltage
IC= 8A ;IB= 2A
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.4A
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 5A ;IB= 1A
1.6
V
ICES
Collector Cutoff Current
VCE= RatedVCES;VBE=0
VCE= RatedVCES;VBE=0,TC= 125℃
0.1
0.5
mA
ICEO
Collector Cut-off Current (IB = 0)
VCE = 400 V
250
uA
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
6
hFE-3
DC Current Gain
IC= 10mA; VCE= 5V
8
isc website:www.iscsemi.com
CONDITIONS
2
MIN
TYP.
MAX
400
UNIT
V
2.0
V
40
isc & iscsemi is registered trademark
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