SEMTECH MMBTSA1235 Pnp silicon epitaxial planar transistor Datasheet

MMBTSA1235
PNP Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into two groups E and F,
according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
60
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
200
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 6 V, -IC = 1 mA
Current Gain Group
at -VCE = 6 V, -IC = 0.1 mA
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Emitter Base Breakdown Voltage
at -IC = 100 µA
Collector Cutoff Current
at -VCB = 60 V
Emitter Cutoff Current
at -VEB = 6 V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Gain Bandwidth Product
at -VCE = 6 V, -IC = 10 mA
Collector Output Capacitance
at -VCB = 6 V, f = 1 MHz
Noise Figure
at -VCE = 6 V, IE= 0.3 mA, f = 100 Hz, RG = 10 KΩ
E
F
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
150
250
90
-
300
500
-
-
-V(BR)CBO
60
-
-
V
-V(BR)CEO
50
-
-
V
-V(BR)EBO
6
-
-
V
-ICBO
-
-
0.1
µA
-IEBO
-
-
0.1
µA
-VCE(sat)
-
-
0.3
V
-VBE(sat)
-
-
1
V
fT
-
200
-
MHz
Cob
-
4
-
pF
NF
-
-
20
dB
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 05/08/2006
MMBTSA1235
Power Dissipation vs Ambient Temperature
Power Dissipation: Ptot (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
Ambient Temperature: Ta ( C)
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 05/08/2006
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