ON MMSZ8V2ET1 Zener voltage regulators 500 mw sod−123 surface mount Datasheet

MMSZ2V4ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Specification Features
•
•
•
•
•
•
•
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
Pb−Free Packages are Available
1
Cathode
2
Anode
2
1
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MARKING DIAGRAM
ÂÂ
ÂÂ
ÂÂ
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75°C
Derated above 75°C
PD
500
6.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 3)
RqJA
340
°C/W
Thermal Resistance, Junction−to−Lead
(Note 3)
RqJL
150
°C/W
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
xxx M G
G
xxx = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
Package
Shipping †
MMSZxxxET1
SOD−123
(Pb−Free)
3000/Tape & Reel
MMSZxxxET3
SOD−123
(Pb−Free)
10,000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
MMSZ2V4ET1/D
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
I
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
IR VF
IZT
Zener Voltage Regulator
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2
V
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 4 and 5)
ZZT1
(Note 6)
VZ2 (V)
(Notes 4 and 5)
@ IZT1 = 5 mA
ZZT2
(Note 6)
Max Reverse
Leakage Current
@ IZT2 = 1 mA
IR @ VR
Device
Device
Marking
Min
Nom
Max
W
Min
Max
W
mA
V
MMSZ2V4ET1, G
CL1
2.28
2.4
2.52
100
1.7
2.1
600
50
1
MMSZ2V7ET1, G
CL2
2.57
2.7
2.84
100
1.9
2.4
600
20
1
MMSZ3V0ET1
CL3
2.85
3.0
3.15
95
2.1
2.7
600
10
1
MMSZ3V3ET1, G
CL4
3.14
3.3
3.47
95
2.3
2.9
600
5
1
MMSZ3V6ET1, G
CL5
3.42
3.6
3.78
90
2.7
3.3
600
5
1
MMSZ3V9ET1, G
CL6
3.71
3.9
4.10
90
2.9
3.5
600
3
1
MMSZ4V3ET1
CL7
4.09
4.3
4.52
90
3.3
4.0
600
3
1
MMSZ4V7ET1
CL8
4.47
4.7
4.94
80
3.7
4.7
500
3
2
MMSZ5V1ET1, G
CL9
4.85
5.1
5.36
60
4.2
5.3
480
2
2
MMSZ5V6ET1
CM1
5.32
5.6
5.88
40
4.8
6.0
400
1
2
MMSZ6V2ET1
CM2
5.89
6.2
6.51
10
5.6
6.6
150
3
4
MMSZ6V8ET1
CM3
6.46
6.8
7.14
15
6.3
7.2
80
2
4
MMSZ7V5ET1
CM4
7.13
7.5
7.88
15
6.9
7.9
80
1
5
MMSZ8V2ET1
CM5
7.79
8.2
8.61
15
7.6
8.7
80
0.7
5
MMSZ9V1ET1
CM6
8.65
9.1
9.56
15
8.4
9.6
100
0.5
6
MMSZ10ET1, G
CM7
9.50
10
10.50
20
9.3
10.6
150
0.2
7
MMSZ11ET1
CM8
10.45
11
11.55
20
10.2
11.6
150
0.1
8
MMSZ12ET1, G
CM9
11.40
12
12.60
25
11.2
12.7
150
0.1
8
MMSZ13ET1
CN1
12.35
13
13.65
30
12.3
14.0
170
0.1
8
MMSZ15ET1, G
CN2
14.25
15
15.75
30
13.7
15.5
200
0.05
10.5
MMSZ16ET1, G
CN3
15.20
16
16.80
40
15.2
17.0
200
0.05
11.2
MMSZ18ET1, G
CN4
17.10
18
18.90
45
16.7
19.0
225
0.05
12.6
MMSZ20ET1, G
CN5
19.00
20
21.00
55
18.7
21.1
225
0.05
14
MMSZ22ET1, G
CN6
20.90
22
23.10
55
20.7
23.2
250
0.05
15.4
MMSZ24ET1
CN7
22.80
24
25.20
70
22.7
25.5
250
0.05
16.8
4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
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3
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
VZ1 (V)
(Notes 7 and 8)
ZZT1
(Note 9)
@ IZT1 = 2 mA
Device
Marking
Min
Nom
Max
MMSZ27ET1, G
CN8
25.65
27
MMSZ30ET1
CN9
28.50
MMSZ33ET1
CP1
MMSZ36ET1
VZ2 (V)
(Notes 7 and 8)
ZZT2
(Note 9)
Max Reverse
Leakage Current
@ IZT2 = 0.1 mA
@ IZT2 =
0.5 mA
IR @ VR
W
Min
Max
W
mA
V
28.35
80
25
28.9
300
0.05
18.9
30
31.50
80
27.8
32
300
0.05
21
31.35
33
34.65
80
30.8
35
325
0.05
23.1
CP2
34.20
36
37.80
90
33.8
38
350
0.05
25.2
MMSZ39ET1
CP3
37.05
39
40.95
130
36.7
41
350
0.05
27.3
MMSZ43ET1, G
CP4
40.85
43
45.15
150
39.7
46
375
0.05
30.1
MMSZ47ET1
CP5
44.65
47
49.35
170
43.7
50
375
0.05
32.9
MMSZ51ET1
CP6
48.45
51
53.55
180
47.6
54
400
0.05
35.7
MMSZ56ET1
CP7
53.20
56
58.80
200
51.5
60
425
0.05
39.2
Device
7. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz.
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
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4
MMSZ2V4ET1 Series
8
100
7
θ VZ , TEMPERATURE COEFFICIENT (mV/°C)
θ VZ , TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES
6
5
4
10
VZ @ IZT
3
2
1
0
−1
−2
1−3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
TYPICAL TC VALUES
FOR MMSZ2V4T1 SERIES
VZ @ IZT
12
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Ppk, PEAK SURGE POWER (WATTS)
1000
P D, POWER DISSIPATION (WATTS)
1.2
1.0
PD versus TL
0.8
0.6
100
PD versus TA
0.4
0.2
0
0
25
50
75
100
T, TEMPERATURE (°C)
RECTANGULAR
WAVEFORM, TA = 25°C
125
10
1
150
0.1
Figure 3. Steady State Power Derating
1000
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (Ω )
10
100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
100
5 mA
20 mA
10
1
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
10
150°C
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
25°C
0°C
75°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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5
1.1
1.2
MMSZ2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
TA = 25°C
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
I R , LEAKAGE CURRENT (μA)
1000
100
BIAS AT
50% OF VZ NOM
1
10
1
+150°C
0.1
0.01
10
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
0.001
+ 25°C
0.0001
−55°C
0.00001
0
10
Figure 7. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
100
100
I Z , ZENER CURRENT (mA)
TA = 25°C
10
1
10
1
0.1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
10
0.01
12
10
100
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
TA = 25°C
0.01
80
40
60
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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6
80
90
MMSZ2V4ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
ÂÂÂÂ
ÂÂÂÂ
1
HE
DIM
A
A1
b
c
D
E
HE
L
E
L
2
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
−−−
−−−
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
−−−
−−−
0.25
MIN
0.037
0.000
0.020
−−−
0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
−−−
0.063
0.106
0.145
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
STYLE 1:
PIN 1. CATHODE
2. ANODE
C
b
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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