Order this document by MTIL117/D SEMICONDUCTOR TECHNICAL DATA STYLE 1 PLASTIC The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications • Appliances, Measuring Instruments 6 • General Purpose Switching Circuits 1 • Programmable Controllers STANDARD THRU HOLE • Portable Electronics • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment SCHEMATIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value 1 6 2 5 3 4 Unit INPUT LED Reverse Voltage VR 6 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C PD 100 mW 1.41 mW/°C OUTPUT TRANSISTOR Collector–Emitter Voltage VCEO 30 Volts Emitter–Base Voltage VEBO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 50 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C PD 50 mW 1.76 mW/°C VISO 7500 Vac(pk) PD 250 2.94 mW mW/°C PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Motorola Device Data Motorola, Inc.Optoelectronics 1997 1 MTIL117 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit VF — — — 1.15 1.3 1.05 1.4 — — Volts Reverse Leakage Current (VR = 3 V) IR — 0.05 10 µA Capacitance (V = 0 V, f = 1 MHz) CJ — 18 — pF ICEO — 3 50 nA ICEO — 0.05 50 µA ICBO — 0.2 20 nA Collector–Emitter Breakdown Voltage (IC = 1 mA) V(BR)CEO 30 45 — Volts Collector–Base Breakdown Voltage (IC = 10 µA) V(BR)CBO 70 100 — Volts Emitter–Base Breakdown Voltage (IE = 10 µA) Characteristic INPUT LED Forward Voltage (IF = 16 mA) TA = 0–70°C TA = –55°C TA = 100°C OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V, V TA = 25°C) (VCB = 30 V, TA = 70°C) Collector–Base Dark Current (VCB = 10 V) V(BR)EBO 7 7.8 — Volts DC Current Gain (IC = 1 mA, VCE = 5 V) (Typical Value) hFE — 600 — — Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) CCE — 7 — pF Collector–Base Capacitance (f = 1 MHz, VCB = 0) CCB — 19 — pF Emitter–Base Capacitance (f = 1 MHz, VEB = 0) CEB — 9 — pF IC (CTR)(2) 0.5 (50) 1 (100) — mA (%) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) Collector–Emitter Saturation Voltage (IC = 100 µA, IF = 1 mA) VCE(sat) — 0.22 0.5 Volts Turn–On Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) ton — — 10 µs Turn–Off Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) toff — — 10 µs Rise Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) tr — 3.8 — µs Fall Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) tf — 5.6 — µs Isolation Voltage (f = 60 Hz, t = 1 sec)(4) VISO 7500 — — Vac(pk) Isolation Resistance (V = 500 V)(4) RISO 1011 — — Ω Isolation Capacitance (V = 0 V, f = 1 MHz)(4) CISO — 0.2 2 pF 1. 2. 3. 4. 2 Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 14. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. Motorola Optoelectronics Device Data MTIL117 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V 1.3 TA = –55°C NCTR, NORMALIZED CTR V F , FORWARD VOLTAGE (V) 1.4 1.2 1.1 TA = 25°C 1.0 TA = 85°C 0.9 1.0 NCTR NCTR(sat) 0.5 TA = 25°C 0.8 0.7 0 0.1 10 1.0 100 1.0 0 IF, FORWARD CURRENT (mA) 100 IF, LED CURRENT (mA) Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and Saturated CTR, TA = 25°C vs. LED Current 1.5 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V 1.0 NCTR NCTR, NORMALIZED CTR NCTR, NORMALIZED CTR 10 TA = 50°C NCTR(sat) 0.5 0 0.1 10 1.0 100 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V 1.0 NCTR TA = 70°C NCTR(sat) 0.5 0 0.1 1.0 IF, LED CURRENT (mA) 10 100 IF, LED CURRENT (mA) Figure 3. Normalized Non–Saturated and Saturated CTR, TA = 50°C vs. LED Current Figure 4. Normalized Non–Saturated and Saturated CTR, TA = 70°C vs. LED Current NCTR, NORMALIZED CTR 1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25°C CTRCE(sat) VCE = 0.4 V 1.0 NCTR TA = 85°C NCTR(sat) 0.5 0 0.1 1.0 10 100 IF, LED CURRENT (mA) Figure 5. Normalized Non–Saturated and Saturated CTR, TA = 85°C vs. LED Current Motorola Optoelectronics Device Data 3 MTIL117 105 35 30 ICEO , COLLECTOR–EMITTER (nA) ICE , COLLECTOR CURRENT (mA) 25°C 50°C 25 20 85°C 15 70°C 10 5.0 10 20 30 40 50 103 VCE = 10 V 102 101 TYPICAL 100 10–1 10–2 –20 0 0 104 60 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) IF, LED CURRENT (mA) Figure 6. Collector–Emitter Current vs. Temperature and LED Current Figure 7. Collector–Emitter Leakage Current vs. Temperature 1.5 10 NORMALIZED TO: IF = 10 mA VCB = 9.3 V TA = 25°C 1.0 0.5 NORMALIZED PHOTOCURRENT NCTR CB, NORMALIZED CTR CB 20 0 25°C 50°C 70°C 0 NORMALIZED TO: IF = 10 mA TA = 25°C –20°C 25°C 1.0 70°C 50°C 0.1 0.01 0.1 10 1.0 100 0.1 1.0 10 IF, LED CURRENT (mA) IF, LED CURRENT (mA) Figure 8. Normalized CTRcb vs. LED Current and Temperature Figure 9. Normalized Photocurrent vs. lF and Temperature 100 1.2 NORMALIZED TO: VCE = 10 V IB = 20 mA TA = 25°C NH FE , NORMALIZED H FE 70°C 1.0 50°C 25°C –20°C 0.8 0.6 0.4 1.0 10 100 1000 IB, BASE CURRENT (mA) Figure 10. Normalized Non–Saturated HFE vs. Base Current and Temperature 4 Motorola Optoelectronics Device Data MTIL117 2.5 1000 50°C 1.0 25°C –20°C 0.5 TA = 25°C IF = 10 mA VCC = 5.0 V VTH = 1.5 V tpHL 100 tp HL , PROPAGATION DELAY ( m s) 70°C NORMALIZED TO: VCE = 10 V IB = 20 mA TA = 25°C tp LH , PROPAGATION DELAY ( m s) NHFE(sat) , NORMALIZED SATURATED H FE 1.5 2.0 1.5 10 tpLH VCE = 0.4 V 0 1.0 1.0 10 100 0.1 1000 1.0 10 1.0 100 RL, COLLECTOR LOAD RESISTOR (KW) IB, BASE CURRENT (mA) Figure 11. Normalized HFE vs. Base Current and Temperature Figure 12. Propagation Delay vs. Collector Load Resistor IF tD tR VO tPLH VTH = 1.5 V tPHL tS tF Figure 13. Switching Timing VCC = 10 V F = 10 KHz DF = 50% RL VO IF IC = 2 mA IF = As necessary to get IC = 2 mA Figure 14. Switching Schematic Motorola Optoelectronics Device Data 5 MTIL117 Package Dimensions in Inches (mm) 3 2 1 4 5 6 PIN ONE ID. 0.248 (6.30) 0.256 (6.50) ANODE 1 6 BASE CATHODE 2 5 COLLECTOR NC 3 4 EMITTER 0.335 (8.50) 0.343 (8.70) 0.300 (7.62) typ. 0.039 (1.00) min. 0.130 (3.30) 0.138 (3.50) 4_ typ. 0.018 (0.45) 0.022 (0.55) 0.031 (0.80) min. 0.031 (0.80) 0.035 (0.90) 0.010 (0.25) typ. 18_ typ. 0.114 (2.90) 0.130 (3.30) 0.300 (7.62) 0.347 (8.82) 0.100 (2.54) typ. 6 Motorola Optoelectronics Device Data MTIL117 Motorola reserves the right to make changes without further notice to any products herein. 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