IXYS IXBT6N170 High voltage, high gain bimosfetâ ¢ monolithic bipolar mos transistor Datasheet

Advanced Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 6N170
IXBT 6N170
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
12
A
IC90
TC = 90°C
6
A
ICM
TC = 25°C, 1 ms
24
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load
ICM =
16
V CES = 1350
A
V
PC
TC = 25°C
75
W
°C
-55 ... +150
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque (M3)
Weight
TO-247 AD
TO-268
°C
300
°C
260
1.13/10Nm/lb.in.
VCES = 1700 V
=
12 A
IC25
VCE(sat) = 3.6 V
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
G
G = Gate,
E = Emitter,
g
g
z
z
z
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2003 IXYS All rights reserved
1700
3.0
TJ = 25°C
TJ = 125°C
TJ = 125°C
3.0
3.3
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
z
6
4
(TAB)
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
z
z
6
V
V
10
100
µA
µA
±100
nA
z
3.6
V
V
z
z
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge circuits
Advantages
z
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS99004(02/03)
IXBH 6N170
IXBT 6N170
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3
4
S
∅P
330
pF
23
pF
Cres
6
pF
Qg
20
nC
3.6
nC
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
8
nC
td(on)
25
ns
18
ns
tri
Inductive load, TJ = 25°°C
td(off)
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
tfi
600
1000
ns
1110
1600
ns
Eoff
4
6 mJ
td(on)
25
ns
20
ns
tri
Eon
td(off)
tfi
Inductive load, TJ = 125°°C
IC
= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 120 Ω
0.7
mJ
660
ns
1600
ns
5
mJ
Eoff
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
1.65 K/W
RthJC
RthCK
TO-247 AD Outline
(TO-247)
Reverse Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF
t
= IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
IRM
t rr
IF
vR
= 6 A, VGE = 0 V, -diF/dt = 50 A/us
= 100A
3.0
6
360
V
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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