SavantIC Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD896/898/900/902 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD895 VCBO VCEO Collector-base voltage Collector-emitter voltage BD897 BD899 VALUE 45 Open emitter 60 80 BD901 100 BD895 45 BD897 BD899 UNIT Open base BD901 60 80 V V 100 VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A IB Base current 300 mA PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 70 Ta=25 2 W SavantIC Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD895 V(BR)CEO VCEsat VBE ICBO ICEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 BD897 60 IC=100mA, IB=0 V BD899 80 BD901 100 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.5 V Base-emitter on voltage IC=3A ; VCE=3V 2.5 V BD895 VCB=45V, IE=0 TC=100 0.2 2.0 BD897 VCB=60V, IE=0 TC=100 0.2 2.0 BD899 VCB=80V, IE=0 TC=100 0.2 2.0 BD901 VCB=100V, IE=0 TC=100 0.2 2.0 BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899 VCE=40V, IB=0 BD901 VCE=50V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=3A ; VCE=3V VEC Diode forward voltage IE=8A ton Turn-on time toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10B;tp=20µs mA 0.5 mA 2 mA 3.5 V 750 1 µs 5 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.79 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD895/897/899/901