PHILIPS BYD71C Ultra fast low-loss controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD71 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1996 Sep 19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical SOD91 glass
package through Implotec(1)
technology. This package is
• High maximum operating
temperature
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
a
k
• Available in ammo-pack.
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
BYD71A
−
50
V
BYD71B
−
100
V
BYD71C
−
150
V
BYD71D
−
200
V
BYD71E
−
250
V
BYD71F
−
300
V
BYD71G
−
400
V
−
50
V
continuous reverse voltage
BYD71B
−
100
V
BYD71C
−
150
V
BYD71D
−
200
V
BYD71E
−
250
V
BYD71F
−
300
V
BYD71G
−
400
V
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
0.56
A
−
0.54
A
Tamb = 60 °C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
0.43
A
−
0.41
A
average forward current
BYD71A to D
BYD71E to G
IF(AV)
UNIT
repetitive peak reverse voltage
BYD71A
IF(AV)
MAX.
average forward current
BYD71A to D
BYD71E to G
1996 Sep 19
2
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
IFRM
IFRM
BYD71 series
PARAMETER
MIN.
MAX.
BYD71A to D
−
4.7
A
BYD71E to G
−
5.0
A
BYD71A to D
−
3.7
A
BYD71E to G
−
3.9
A
−
7
A
BYD71A to D
−
250
W
BYD71E to G
−
150
W
repetitive peak forward current
repetitive peak forward current
CONDITIONS
UNIT
Ttp = 55 °C; see Figs 6 and 7
Tamb = 60 °C; see Figs 8 and 9
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
PRSM
non-repetitive peak reverse power
dissipation
t = 20 µs half sine wave; Tj = Tj max
prior to surge
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
MIN.
TYP.
MAX.
−
−
0.84
V
−
−
0.90
V
−
−
1.05
V
−
−
1.11
V
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYD71A to D
CONDITIONS
IF = 0.5 A; Tj = Tj max;
see Figs 12 and 13
BYD71E to G
VF
forward voltage
BYD71A to D
IF = 0.5 A;
see Figs 12 and 13
BYD71E to G
V(BR)R
IR
trr
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD71A
55
−
−
V
BYD71B
110
−
−
V
BYD71C
165
−
−
V
BYD71D
220
−
−
V
BYD71E
275
−
−
V
BYD71F
330
−
−
V
BYD71G
440
−
−
V
VR = VRRMmax;
see Fig 14
−
−
1
µA
VR = VRRMmax;
Tj = 165 °C; see Fig 14
−
−
75
µA
−
−
25
ns
−
−
50
ns
reverse current
reverse recovery time
BYD71A to D
BYD71E to G
1996 Sep 19
UNIT
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A
see Fig 18
3
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
Cd
BYD71 series
PARAMETER
diode capacitance
CONDITIONS
f = 1 MHz; VR = 0 V;
see Fig.15
BYD71A to D
BYD71E to G
dI R
-------dt
maximum slope of reverse recovery
current
BYD71A to D
BYD71E to G
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig.17
MIN.
TYP.
MAX.
UNIT
−
25
−
pF
−
20
−
pF
−
−
4
A/µs
−
−
5
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
180
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 19
4
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
GRAPHICAL DATA
MCD564
MCD565
0.8
0.8
handbook, halfpage
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
0.6
0.6
lead length 10 mm
lead length 10 mm
0.4
0.4
0.2
0.2
0
0
0
100
Ttp ( oC)
0
200
100
BYD71A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYD71E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Ttp ( oC)
200
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGC526
MGC527
0.6
0.6
handbook, halfpage
handbook, halfpage
IF(AV)
IF(AV)
(A)
(A)
0.4
0.4
0.2
0.2
0
0
0
100
Tamb ( oC)
200
0
100
BYD71A to D
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
BYD71E to G
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1996 Sep 19
5
Tamb ( oC)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD563
5.0
handbook, full pagewidth
I FRM
(A)
δ=
0.05
0.1
2.5
0.2
0.5
1
0
10 -2
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD71A to D
Ttp = 55 °C; Rth j-tp = 180 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD562
5.0
handbook, full pagewidth
δ=
0.05
I FRM
(A)
0.1
2.5
0.2
0.5
1
0
-2
10
10
-1
10
0
10
1
10
2
10
3
t p ( ms )
10
4
BYD71E to G
Ttp = 55 °C; Rth j-tp = 180 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
6
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD561
4
handbook, full pagewidth
I FRM
(A)
δ=
0.05
3
0.1
2
0.2
1
0.5
1
0
10-2
10 -1
10 0
10 1
10 2
10 3
t p ( ms )
10 4
BYD71A to D
Tamb = 60 °C; Rth j-a = 250 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD560
4
handbook, full pagewidth
δ=
0.05
I FRM
(A)
3
0.1
2
0.2
1
0.5
1
0
10 -2
10 -1
10 0
10 1
10 2
10 3
10 4
t p (ms )
BYD71E to G
Tamb = 60 °C; Rth j-a = 250 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
7
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD567
0.50
handbook, halfpage
MCD566
0.50
handbook, halfpage
a=3
a=3
2.5
P
(W)
2
P
(W)
a = 1.57
2.5
a = 1.57
2
1.42
1.42
0.25
0.25
0
0
0
0.25
0
0.50
I F(AV) (A)
BYD71A to D
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
0.25
0.50
I F(AV) (A)
BYD71E to G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
MCD568
MCD569
5
5
handbook, halfpage
handbook, halfpage
IF
(A)
4
IF
(A)
4
3
3
2
2
1
1
0
0
0
1
2
3
VF (V)
4
0
1
2
VF (V)
3
BYD71A to D
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
BYD71E to G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
Fig.13 Forward current as a function of forward
voltage; maximum values.
1996 Sep 19
8
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
MCD582
3
10
handbook, halfpage
MCD559
2
10halfpage
handbook,
IR
(µA)
C
d
(pF)
10 2
10
10
A, B, C, D
E, F, G
1
1
0
100
Tj ( oC)
10 2
10
1
200
VR (V)
10 3
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax.
Fig.14 Reverse current as a function of junction
temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
50
handbook, halfpage
IF halfpage
dbook,
25
dI F
dt
7
t rr
50
10% t
dI R
dt
100%
2
IR
MGC499
3
MGA200
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
1996 Sep 19
Fig.17 Reverse recovery definitions.
9
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
DUT
handbook, full pagewidth
BYD71 series
IF
(A)
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 19
10
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
PACKAGE OUTLINE
3.5 max
handbook, full pagewidth
0.55
max
1.7
max
29 min
3.0 max
MBC053
29 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.19 SOD91.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 19
11
Not recommended for new designs
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