Order this document by MUN5111T1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications. PNP SILICON BIAS RESISTOR TRANSISTOR • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–70/SOT–323 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. PIN3 COLLECTOR (OUTPUT) 3 R1 PIN1 R2 BASE (INPUT) 1 2 PIN2 EMITTER (GROUND) CASE 419–02, STYLE 3 SC–70/SOT–323 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector–Base Voltage VCBO 50 Vdc Collector–Emitter Voltage Rating VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ TA = 25°C(1) Derate above 25°C PD *150 1.2 mW mW/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA 833 °C/W TJ, Tstg – 65 to +150 °C TL 260 10 °C Sec DEVICE MARKING AND RESISTOR VALUES Device MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1(2) MUN5116T1(2) MUN5130T1(2) MUN5131T1(2) MUN5132T1(2) MUN5133T1(2) MUN5134T1(2) Marking R1 (K) R2 (K) 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Small–Signal Transistors, FETs and Diodes Device Data Motorola Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO — — — — — — — — — — — — — — — — — — — — — — 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 — — — — — — — — — — — VCE(sat) — — 0.25 — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) VOL MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5113T1 Vdc Vdc 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 VOH 4.9 — — Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 kΩ R1/R2 0.8 0.17 — 0.8 0.055 0.38 1.0 0.21 — 1.0 0.1 0.47 1.2 0.25 — 1.2 0.185 0.56 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 – 50 RθJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111T1 IC/IB = 10 TA = –25°C 0.1 25°C 75°C 0.01 0 20 100 –25°C IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 2 1 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA = 75°C 25°C 10 40 4 0 VCE = 10 V TA = –25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data 1000 10 IC/IB = 10 1 25°C TA = –25°C 75°C 0.1 0.01 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112T1 TA = 75°C 25°C –25°C 100 10 0 20 IC, COLLECTOR CURRENT (mA) 40 1 50 10 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 3 2 1 0 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C TA = –25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 1 0.1 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 Figure 9. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 1 1000 IC/IB = 10 TA = –25°C hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113T1 25°C 75°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA = 75°C 25°C –25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 0 0 100 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C TA = 75°C –25°C 10 1 0.1 0.01 0.001 Figure 14. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = –25°C 25°C 75°C 10 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114T1 TA = –25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 –25°C 120 100 80 60 40 20 0 80 TA = 75°C VCE = 10 V 160 1 2 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA = 75°C f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25°C –25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25°C TA = –25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data Figure 22. Inexpensive, Unregulated Current Source 7 MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC–70/SOT–323 POWER DISSIPATION The power dissipation of the SC–70/SOT–323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C = 150 milliwatts 833°C/W The 833°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 300 milliwatts can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. 8 • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 23 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 6 STEP 7 VENT COOLING STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 150°C 140°C 100°C 100°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 23. Typical Solder Heating Profile Motorola Small–Signal Transistors, FETs and Diodes Device Data 9 PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D V G C 0.05 (0.002) R N J DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 K H CASE 419-02 ISSUE H SC–70/SOT–323 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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